DOI: 10.15330/pcss.16.1.111-115

V.А. Romaka^1,2, P. Rogl³, Yu.V. Stadnyk⁴, L.P. Romaka⁴, R.O. Korzh², D. Kaczorowski⁵, V.Ya. Krayovskyy², A.M. Нoryn⁴

Investigation of V_1-xTi_xFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics

¹Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, NAS of Ukraine, Naukova str., 3-b, Lviv, 79060, Ukraine;
²National University “Lvivska Politechnika”, Bandera str., 12, Lviv, 79013, Ukraine;
³Institut fur Physikalische Chemie, Universitet Wien, Wahringerstrasse, 42, Wien, A-1090, Austria;
⁴Ivan Franko National University of Lviv, Kyryla and Mefodiya Str., 6, Lviv, 79005, Ukraine; 5Institute of Low Temperature and Structure Research Polish Academy of Sciences, P.O. Box 1410, 50-950, Wroclaw, Poland

The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5•1019–3.6•1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed.
Keywords: semiconductor, electrical conduction, electronic structure.

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