2001   Volume 2   №4

Summary

Z.V. Stasyuk, A.I. Lopatinsky

Size-Dependent Kinetic Phenomena in Thin Metal Films. Review. Classic Effects
(review)

Lviv Ivan Franko National University, Physical Department
50, Drahomanov Str., Lviv, 79005, Ukraine

The main theoretical models of classical size-effect have been analized. The kinetic coefficients of thin film differed from those of bulk metal due to additional scattering of charge carriers by film surface (external size-effect) and by grain boundaries (internal size-effect). The influence of macroscopic surface asperities on charge transport in thin metal films was analized too. The results of theoretic and experimental investigations of charge transport in transition metal thin films were reviewed.

D.М. Freik, V.V. Prokopiv, V.V. Boryk, Y.І. Dronyak

Crystallochemistry of Own Atom Defects
on Lead Telluride Crystals

Physics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail: prk@pu.if.ua

The offered model of quazychemistry reactions of natural nuclear defects formation in tin telluride crystals with simultaneous existence one and two-charging defects behind Schottky four-charging tin vacancies. It is receive analytic formulas to Hall hall concentration p_Х, hall concentration p and electron concentration n, tin vacancies ,  and tellurium  above constants quasychemistry reactions of their formation К and parcial pressure of tellurium vapour .

B.Т. Boyko, О.P. Chernykh, G.S. Khripunov, G.I. Kopach

Photoelectrics Films Transformators on Bases CuGaSe₂

National Technical University “KPI”, Ukraine, 61002, Kharkiv, 21, Frunze Str.

By analytical processing experimental light by load of volt-ampere characteristics the examination of photoelectric processes in solar devices is carried out on the basis of layers CuGaSe₂, received by a method of thermal vacuum transpiration. Is shown, that the augmentation of substrate temperature from 530^оС up to 630^оС gives in the important enriching of initial parameters of photoelectric transformers (ФЕП): ascending of a strain no-load operation from 72 mV up to 752 mV, current density of a short circuit from 8 mA/cm² up to 14 mA/cm², factor of filling of a volt-ampere characteristic from 0,30 up to 0,61 and as a result - to augmentation of efficiency PET from 0,2 % up to 6,4 %. By numerical model operation identified, that the optimization of initial parameters is caused by decrease of density of a diode saturation current. By structural examinations identified mechanisms of augmentation of density of a diode saturation current. Is shown, that for the further rising of efficiency explored PET on a bottom(basis) CuGaSe₂ it is necessary to carry out inverse such as an electrical conductivity near-surfaces of a part base layers.

D. Baltrunas¹, D.M. Zayachuk², V.I. Mikityuk³, Ye.O. Polyhach²

Investigations of the Pb_1-xSn_xTe:Gd Crystal Defect Structure by Means
of ¹¹⁹Sn Mossbauer Spectroscopy

¹Institute of Physics, 2600 Vilnius, Lithuania

²Lviv Polytechnic National University, 79013 Lviv, Ukraine

³Chernivtsy National University, 58012 Chernivtsy, Ukraine

Solid solutions of Pb1-xSnxTe crystals grown from the melt by Bridgman method and doped while growth process have been investigated by means of 119­Sn Mössbauer spectroscopy for composition region 0.07 £ x £ 1.0 at room temperature conditions. Both composition and conductivity type dependencies for Mössbauer spectra observed have been determined. On the basis of results obtained the conclusion was drawn that using Gd impurity while growth lead and tin telluride crystals leads to decrease general point defect concentration in crystalline lattice.

B.M. Ruvinskii

Equilibrium Concentrations of Current Carriers and Defects in PbSe Films under Growing from Vapour-Phase and Oxidation

Precarpathian University named by V.Stefanyk, 76000, Ivano-Frankivsk, Shevchenko St., 57

The crystallochemical model of formation of the defective subsystem in PbSe films has been proposed and calculated with taking into account of the complicated nature of charged state spectrum of Frenkel defects in a cationic sublattice. The equilibrium concentrations of current carriers, neutral, singly charged and doubly charged vacancies and internodal atoms in PbSe films depending on technological factors have been determined under growing from vapour-phase and oxidation. The results of numerical calculation agree well with the experimental data.

Z.D. Kovalyuk, E.I. Slyn'ko, O.G. Khandozhko

Nuclear Quadrupole Resonance in GaSe and InSe
Polytype Compounds

Chernivtsy Department of Institute of Material Sceince Problems NAS Ukraine,
58001, Chernivtsy, 5, I. Vilde Str., tel. (03722) 2-51-55,
E-mail: chimsp@unicom.cv.ua

*Yuriy Fedkovych Chernivtsy State University, Radiotechn. Dept,

58012, Chernivtsy, 2, Kotsyubynskiy Str. tel. (03722) 4-24-36,
 Е-mail: rmd@chnu.cv.ua

The nuclear quadrupole resonance on ⁶⁹Ga and ¹¹⁵In isotopes has been investigated in GaSe and InSe layer compounds. The analysis of resonance spectra is carried out, proceeding from polytypes of these compounds and probability of formation of the ordered structural fragments in the basic crystal modifications.

M.I. Mar’yan, A.A. Kikineshy, A. Szasz*

Self-organizing processes and dissipative structure
formation in the non-crystalline materials

Uzhgorod National University, Depertment of Solid State Electronics,
 Uzhgorod, Ukraine, 88000

*University Godollo, Faculty of Mechanical Engineering,
 Budapest, Hungary, 2071, E-mail :marjan@univ.uzhgorod.ua

The dissipative structure formation in the non-crystalline materials is related to the self-organizing phenomenon. Within of a given approach non-crystalline states is considered as an outcome of the previous self-organization, during which may promote the minimum energy dissipation and facilitate the technological process.

Keywords:
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G.S. Bajtzar, O.G. Mikolajchuk, B.P. Yatsyshyn*

The Influence of the Technological Factors
on the Physical Properties of Thin Films Me-Ge-REM

Ivan Franko Lviv National University,
 79000, Ukraine, Lviv, 1, University Str., tel. 794-763.

*Lviv Comercial Academy,
79008, Ukraine, Lviv, 10, Tugan-Baranovsky, tel. 797-627, E-mail: ecofizbo@ lac.lviv.ua.

The temperature dependences of the conductivity, temperature and kinetics of amorphous-crystalline transformation have been studied in rare-earth-transition metal-germanium thin films.

M.О. Galuschak¹, L.R. Pavlyuk¹, A.D. Freik², V.V. Нижникевич¹, G.D. Матеїк¹

Кристалохімія of Defects in Thallium Doped Thin Films of PbSe

¹Ivano-Frankivsk State University of the oil and gas,
15, Karpatska Str., Ivano-Frankivsk, 76000, Ukraine
²Vasyl Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail: prk@pu.if.ua

It is offered the crystallochemistry model of defective subsystem formation in lead selenide thin films doped of thallium at surplus of lead. The theoretically designed dependence of concentration both of defects and carriers of a current in thin films PbSe:Tl from temperature of deposition, contents doped of an admixing and pressure of lead vapour.

Y.M. Polyak, O.B. Kondrat, M.I. Dovgoshey

Electrophysical Characteristics Of Structures
Si(p)-film Ge₃₃As₁₂Se₅₅ with Differentinjective Contacts

Uzghorod National University,
 Pidhirna Str., 46, Uzghorod, 88000, Ukraine

To establish of contacts influence on transfer charge mechanism in the structure
Si(p)-Ge₃₃As₁₂Se₅₅, the current-voltage and capacitance-voltage characteristics were investigated. The influence of electrode material on electrophysical properties connects with special redistribution of charges and creation of poor-charged or rich-charged ranges. The current-voltage characteristics of structures Ni-Si(p)-Ge₃₃As₁₂Se₅₅-Me (where Me: Bi, Sb, Cd) correspond to electrolimited  Schottky effect. The maximum of capacitance-voltage characteristics of these heterostructures were observed in positive voltage range and explained by decisive role of the surface barrier capacities.

О.М. Vartsabjyuk, І.G. Orletskiy, А.J. Savchuk, P.М. Gorley,
Y.V. Vorobjyov*, О.Y. Salyuk**

Optical and Structural Properties of CuInS₂ Thin Films

Yuriy Fedkovych National University, Chernivtsy
*Keretar Deprt CINVESTAV, Keretaro, Mexico
**NТUU ”Kyiv Polytechnical Institute”, Kyiv

It is receive thin films of chalkopirit semiconductor materials A^IB^IIIC^VI₂ with better parameters of absorption efiicient to present analogue. It is shown, that change of mole ratio [Cu]/[In] and [S]/[Cu] on solution CuInS₂ we are may be control by types of conductivity and value of specific resistance of research materials.

N.А. Davydenko³, N.А. Derevjyanko², А.А. Ischenko², G.P. Olkhovyk¹,
P.S. Smertenko¹, L.І. Fenenko¹

Electriphysical Properties of Thin Films on base
of Cover Over Photoconductive Polymers

¹Institute of Semiconductor Physics of NASU, Ukraine, 03039, Kyiv, 45, Nauki Av.,

²Institute of Organics Chemistry of NASU, Ukraine, 02094, Kyiv, 5, St., Murmanska,

³Taras Shevchenko National University, Ukraine, 01033, Kyiv, 64, Volodymyrska St.

Are explored electroconductivity properties of samples sandvich-frames with Membranulas on the basis of a photoconductivity polymetric compound poly-N-epoxypropilcarbazol, doped cationic, anionic, cation-anionic, inside ion, polymetin by stains and neutral organometallic complex. An electrical conductivity of samples caused by drift of ions, thermofielding by oscillation of electron defects from uncontrollable impurity centers, thermofielding by oscillation of electrons and electron defects from moleculas dopered, thermofielding by injection of electrons and electron defects from electrical links. The contribution of currents of injection of charge carriers is enlarged at transition from a cationic stain to anionic, and then to anionic, inside ions and neutrals. The results are supposed to be used by development and making new electroluminiscence of mediums.

V.M.Tomashik, Z.F.Tomashik, N.V.Kusiak

Chemical etching of undoped and doped InAs in the solutions
of the HNO₃-HBr-glycol system

Institute for Semiconductor Physics of the NAS of Ukraine, Kyiv-28, Nauki av.,41,
Ivan Franko Zhytomir State Pedagogical University, Zhytomyr

Chemical dissolution of undoped and tin doped InAs in the solution of the HNO3-HBr-glycol system is studied. The surfaces of equal etching rates (Gibbs diagrams) are constructed, and the limiting stages of the dissolution process and its kinetic peculiarities are determined. The doping influence on the chemical etching of indium arsenide is established. The concentration ranges of solution which can be used for different chemical treatments (polishing, selective etching) of undoped and doped InAs are determined.

D.M. Freik, V.M. Shperun, R.Ya. Mykhailonka, I.M. Ivanyshyn, U.E. Levytska

Thermoelectric Properties and Defect Subsystem
of Solid Solution PbTe-Eu₂Te₃

Physics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76025, Ukraine

The dependence of specific electrical conductivity (s), efficient thermal electromotive forse (a), and specific thermal capasity from composition of both solid solution PbTe-Gd₂Te₃ and PbTe-Tb₂Te₃ is investigated. . Is proposed the crystall-quasychemistry describe of defects subsystem of the bases matrix of solid solution. The composition with optimal value of thermoelectric parameters is determined.

D.L. Kardashev

The Electron Density of States and Levels of a Neutral Vacancy
in Amorphous Covalent Semiconductors

Odessa Sea State Academy, 65029, Odessa, 8, Didrikhsona St.

The electron density of states in amorphous tetrahedrally bonded solids is calculated by the Green function technique using the one-electron tight binding Hamiltonian including all nearest-neighbor interections. The structure of the amorphous silicon is approximated by the Bethe lattice. Electron states of the neutral vacancy are calculated by the orbital removal method.

A.D. Zamkovetz

Polymer-Crystal Interference Systems for the Spectral Region of 30-50 mm spectrum 30-50 mcm

Institute of Molecular and Nuclear Physics NAS Belarusj,
Minsk, E-mail:  lirp@imaph.bas-net.by

We show the principal possibility of creation of manylayer  interference systems and cutoff filters for far IR (30 ¸50 mm) on the base of periodical structures with unequal  thickness  type of [(H-C)(L+C)]^k(H-C), where H and L are the quarter-wave layers made of Ge and a polymer, C is the unequal thickness parameter, k is an integer. For suppression of secondary transmission bands at the short–wave range a disperse cutoff  filter type of polyethilene-silicon has been used.

I.F.Myronyuk¹, V.V.Lobanov¹, B.K.Ostafiychuk², V.I.Mandzyuk², I.I.Grigorchak³, L.S.Yablon²

About the Opportunity of Lithium Penetration into Structural Channels of Crystalline Modifications of Silicon Dioxide

¹Institute of Surface Chemistry of NAS of Ukraine, 17 General Naumov Str., 03164, Kyiv, Ukraine
²Precarpathion University named after V.Stefanyk, 57 Shevchenko Str., Ivano-Frankivsk, 76025, Ukraine
³Institute of Material Problems of NAS of Ukraine, Lviv Department, 1 Paton Str., Lviv, 79000, Ukraine

Semiempiric method of quantitative chemistry helped to research energetics of intercalation processes of clusters by lithium, which represent crystal modification of silica. In the frame of one-electron approximation, a conclusion is made about the occurrence of silicon – oxygenic clusters of additional energetic levels in the prohibited zone, which are caused by the localization of lithium atoms in the channels. The means and the ways of further research of the structure and energetics of intercalated clusters by lithium of different crystal modification are depicted in brief.

I.F. Myronyuk¹, V.M. Ogenko¹, B.K. Ostafiychuk², V.I. Mandzyuk², I.I. Grigorchak³

Thermodynamic Peculiarities of a Current Origin Process in Lithium Sources with the Cathode on the Basis of a Fumed Silica

¹Institute of Surface Chemistry of NAS of Ukraine, 17 General Naumov St., 03164, Kyiv, Ukraine,
²Precarpathion University named after V.Stefanyk, 57 Shevchenko St., Ivano-Frankivsk, 76025, Ukraine,
³Institute of Material Problems of NAS of Ukraine, Lviv Department, 1 Paton St., Lviv, 79000, Ukraine

Using a method of spectroscopy of a chemical potential, which is based on the measurement of electromotive force of lithium cells, thermodynamic peculiarities of current origin in the cathode, which is produced of different dispersity silicon dioxide was researched. It is shown, that capacity of elements depends on middle diameter of primary corpuscles of SiO2 and degree of their aggregation. A conclusion is made about the perspective usage of nanodispersible silica as a cathodic material.

N.V. Yurkovich, I.J. Rosola, I.M. Migolinets, A.V. Lada

The Influence of the Modificator Concentration at the Edge of the Absorption of the Ge₂S₃ + Bi(Pb,Te) Structures of Changeable Content

Uzhgorod national university,  Pidhirna str., 46, Uzhgorod, 88 000, Ukraine,
E-mail: yurkov@ssed.univ.uzhgorod.ua

The results of the experimental investigation of the optical absorption of Ge₂S₃ + Bi(Pb,Te) gradient films have been represented. It is showh, that the Tauts law can be applied to such structures. The nonmonotonous change of the optical parameters alongside with the change of concentration and the type of the element – modificator is detected.

E.N. Naumova, A.I. Kostrjitski, A.U. Kalinkov

Corrosive-Electrochemical Performances of Thin Ionic – Plasma
Coatings on Steel in Neutral Mediums

The Odessa State Academy of Food Technologies
65039, Ukraine, Odessa, Kanatnaya  street 112, OSAFT, ph.  (0482) 29-11-31,
E-mail: profAIK@ipss.net

The regularities of corrosive-electrochemical behaviour of titanium nitride ionic-plasma coatings on steel in neutral mediums are considered. It's rotined that the porosity is a major factor, which determines the protective attributes of covers. The quantitative data about influencing of the operating conditions on a porosity of covers and their corrosive-electrochemical behaviour in fluid mediums are indicated. The empirical formulas, which demonstrate a kinetics of increasing the quantity of a lesion locuses, are obtained. The recommendations about the possibility of using of ionic-plasma covers for a guard of dilute steels from corrosion are proposed.

D.M. Freik, L.I. Nykyruy, M.A. Ruvinskii, V.M. Shperun, V.V. Nyzhnykevych

About Carriers Dispersion at the n-type Lead Chalkogenides Сrystals

Physics-Chemical Institute at the Vasyl Stefanyk Precarpathian University,
57, Shevchenko St., 76000 Ivano-Frankivsk, Ukraine
E-mail: freik@pu.if.ua

Is explored dominant mechanisms of a dispersion of charge carriers in electronic monocrystals lead chalkogenides at temperature range 4,2-300 К in a concentration interval 10¹⁶-10²⁰ cм^-3 with use of the quadratic and nonquadratic laws of a variance. Is shown, that for n-PbSe the quadratic law of a variance is realised; from magnification of breadth of a forbidden region (e_G (PbSe) < e_G (PbTe) < e_G (PbS)) the best correspondence with experimental datas yields already nonquadratic law of a variance (for n-PbS and n-PbTe).

V.V. Mel'nyk, M.M. Slyotov, B.M. Sobischanskiy, Yu.Ya. Chaban

The Optical Properties of Films Zinc Selenide

Yriy Fedkovych Chernivtsy National University,
2, Kotsyubynskogo Str., Chernivtsy, 58012, Ukraine, tel. (03722)44221, E-mail: oe-dpt@chnu.cv.ua

The absorption spectrums and photoluminescence of zinc selenide films are explored. The emission in the blue spectral range is dominated. It is determined by the generation-recombination processes with participation both the energy states caused by intrinsic dot defects of a crystal lattice and interband transitions.

L. Yu. Kozak

Mechanical Properties of Filiform Crystals

Ivano-Frankivsk State Technikal Univrsity of Oil and Gas,
15, Karpatska Str., 76000, Ivano-Frankivsk, tel.: 03422-42351,
 E-mail: kozakl@ifdtung.if.ua тел. (03722)44221, E-mail: oe-dpt@chnu.cv.ua

Usually consider that  thin fiber crystals (whiskers) have an ideal crystal lattice and they have a very high strength which is near theoretical strength. However, further studies have shown ambiguity of relationship of high strength  and ideal   structure of  whiskers.   In the article brought experimental data, being indicative of presence of defects in whiskers, as well as data, being indicative of dependencies of toughness of whiskers from their size. It was shown that whiskers strength were depended their diameter. The high strength is decreasing according raising of diameter of whiskers and that can be result influences of surface.

The strength of whiskers can change in the wide range. The strength of whiskers depends from structure of the whisker surface and from structure of the whisker internal, as well as correlation between them.

О.V. Kopach, С.О. Balanetskiy, L.P. Shcherbak, P.І. Feychuk

Тhermographics Control gas formation procecces on CdTe-Ge systems

Chernivtsy National University, Chernivtsy, Ukraine

Is shown, that the process of dissolution of clusters with increase of temperature in an interval not smaller 20 K above Т_melt The requirements of conservation in the given melts for безактивационного зародкоутворення owing to structuredness of a melt, superheated on 5-10 K above T_E are explored.

V. Nadtochii, M. Nechvolod, M. Golodehko, D. Sushchenko

Unbalance Charge Carriers Recombination in Thing Sub-Surface
Layer of Ge Single Crystal

Slovyansk State Teachers’ Pedagogical Institute,
Slovyansk, 84116, Ukraine

Influence of the cyclical low-temperature straining on charge carriers lifetime in Ge single crystals investigated by the method of the point contact conductivity modulation. It is shown that sub-surface defect layer is arise after deformation. Charge carriers lifetime is decreasing in this layer as compared with undeformed crystal.

D.M. Freik, Y.P.Saliy, О.Y.Dovgiy, M.O. Galuschak

Effective and Local Value of electric parameters on polycrystalline lead telluride films

Physics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
57, Shevchenko str., Ivano-Frankivsk, 76000, Ukraine

The dependence of effective values of specific conductivity, coefficient of Hall, hall concentrations, and mobility of carriers of current from depth of polycrystalline lead telluride films is explored. The calculation profile of their allocation on depth is made. On the basis of the received experimental and theoretical results the mechanisms of defect formation processes are offered.

І. М. Chernenko, К. V. Chasovsky, V. F. Katkov

Growth Films of Bismuth Oxygen by Evaporation on Magnetro System

Dnipropetrovsk National University, 49050 Dnipropetrovsk, 13, Naukova St.

A film a- ,b-, d- and amorphous modifications were gained at fixed values of fractional pressure of oxygen, current of a magnetron and temperature of a substrate. A thickness of films were determened by interference method. Structure and preferred orienteation of obtained films determined by the X-rays analysis in Co К_a radiation on instalation DRON-2,0.

T.D. Bakuma, P.P. Zarin, M.O. Bakuma, O.E. Fedorov

Nuclear Gamma-Ray Recoilless Researches NiAl of Ferromagnetics with Spinel Pattern

Ivano-Frankivsk National Technics University of Oil and Gas
Ivano-Frankisk, 15,Karpatska Str., Physics Dept. tel. 99-31-74   99-31-75

By results of researches we can draw a conclusion, that the replacement of magnetic ions of iron by non-magnetic in octo sublattice results in considerable decreasing of an exchange interaction between tetra – and octo sublattice.

At replacements when x=1,2 this interact practically fades and ferromagnetic is transformed into a paramagnetic material.

S.S. Varshava, N.S. Lyakh, N.М. Stasyuk

Nonlinear Effects on Dot Contacts Metal-Silicon,
and Metal-Silicon-Germanium

National University “Lvivska polytechnika”, Electrophysical Department,
12, Bandery Str., 79013, Lviv, Ukraine

It is shown the review of methods formation of dot united contacts to microcrystallines Si, Ge, Si-Ge; and research nonlinear UI-characteristics Pt-contacts on whiskers crystals Si-Ge, Si (“С”-characteristics). The form UI-characteristics get employment as parameters, and geometry of structure also, namely, of crystal diameter.

S.I. Yushchuk¹, V.O. Kotsubunskiy², S.O. Yur’ev¹, I.P. Yaremiy²

Influence of Annealing on the Magnetic Properties of Ferrogarnet Films

²Precarpation University,  57, Shevchenko St., Ivano-Frankivsk, Ukraine,
¹National university “Lvivska politehnika”

High-temperature annealing of YIG and La,Ga:YIG films causes widening of the ferromagnetic resonance (FMR) line and changes the saturation magnetization at Т=1273...1673 К in the air and the stream of О₂ and Н₂. Low-temperature annealing at Т=723 К in the stream of dry oxygen during 20 hours decreases parameter DН of FMR on 18...25 % and makes it proof to the temperature and humidity changes.

D.M. Freik, I.M. Ivanyshyn, L.Y. Mezhylovska, V.M. Boychuk, M.G. Pavlykivska

Defect Crystalloquasichemistry of solid solution SnTe-In₂Te₃

Physics-Chemistry Institute at the Vasil StefanikPrecarpathian University
57, Shevchenka St., 76000, Ivano-Frankivsk, tel.: 03422-596082, E-mail: irvan@rambler.ru

Defect formation in solid solution SnTe-In₂Te₃ is discribed by crystall-quasichemical method. The fact, that both substitution of cation vacancies by Indium, and partial interstitial of indium atoms into tetraedrical vacuum in the dense set of Tellurium atoms of the main matrix are the main ways of solid solution formation.

I.M. Smolensky

The Kinetic Evaluation Method of the Photooxidation Polyamid Degradation and Technoecological Monitoring of These Processes

Ivano-Frankivsk  National Technical Oil and Gas University,
15, Karpatska St., Ivano-Frankivsk-19, Ukraine, 76019;
E-mail: ismolensky@ifdtung.if.ua

Kinetical method of polyamid (PA) photooxidation degradation evaluation were designed as well as the method of evaluation of the ligt protection efficiency of the additions to the PA under the impact of quantirized longwave UF-radiation which is the closest to the natural aging environment. This permits to perform technoecological and environmental monitoring of the processes 10 to 200 times faster than in the artificial weather equipment.