PCSS, V.4, N1, 2003


O.A.Panchenko, S.V.Sologub

Size Phenomena and Surface Scattering of Current Carriers in Metals

Institute of Physics of NAS of Ukraine,
46, Prospect Nauky, UA-03028, Kiev-28, Ukraine,
phone: 265-1044, E-mail: olpanch@iop.kiev.ua, sologub@iop.kiev.ua

The review gives an account of basic ideas concerning scattering of current carriers at metallic surfaces. It deals with the physical picture of surface-sensitive galvanomagnetic size effects, i.e., transverse magnetic resistance, static skin effect, Sondheimer oscillations, conduction electron focusing. The processes are employed to study the peculiarities of current carrier surface scattering with regard for the electron-hole transfers. Diffraction of conduction electrons at adsorbed submonolayer lattices is considered. An outlook is given of the application of these phenomena to the study of adsorption and ordering of adsorbed submonolayer films of various symmetries and chemical content.

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D.M. Freik1, .. Ruvinskii1, B.. Ruvinskii1, .. Galushchak2, .V. Kalytchuk1

Atomic Defects on PbS Films at Pair-Phase Epitaxial

1Physical-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail: fss@pu.if.ua
2Ivano-Frankivsk National Technical University of Oil and Gas,
15, Karpatska Str., Ivano-Frankivsk, 76000, Ukraine

Model of defect subsystem on PbS films is proposed, that forecast exist any charge states of vacancies and interlattice atoms on cationic sublattice. Analytics relation for concentration dependence of current carriers and defects from technology factors on hot-wall methods is received. The conditions of n-p-junction is define.

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O.A. Blous, I.Yu. Protsenko, A.M. Chornous

Influence of a Degree Crystalls Dispersibility on Parameters of Electrocarry in Metal Materials

Sumy State University,
St.R.-Korsakov 2, Sumy, 40007, Ukraine, E-mail: kpf@ssu.sumy.ua

The thesis is devoted to installation of legitimacies internal size effect in electrophysical properties of Cu, Ni and metal materials (film by width up to 400-600 nm and wire), which have a different degree of a cristalls dispersibility in an interval of intermediate temperatures. Accounts of parameters of electrocarry was carried on base of linear, isotropic Tellier, Tosser and Pichard models, model of Ukhlinov-Kosakovskaya, and asymptotic relations of the Mayadas-Shatzkes theory. For data processing of experiment in wires were used a model of Dingl, Nordhem and model of Ukhlinov-Kosakovskaya. The matching and generalisation of obtained results carried out. Is shown, that the value of grain-boundary scattering coefficient and mean free path of an electrical current determined by a degree of a crystallites dispersibility.

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K.O. Ivanenko, V.S. Kopan', S.L. Revo, V.P. Maiboroda*

The Anisotropy of Properties of the Multilayered Cu-Zn and Cd-Zn Composite Materials in the Sheets' Plane

Kyiv National Taras Shevchenko University, 6, av. Glushkova,
Kyiv, 03022, tel.(044)266-2367, E-mail: revo@phys.univ.kiev.ua,
*Institute for Problems of Materials Science National Academy of Science,
Ukraine, 3, Krzhizhanovski Str., Kiev, 03142, tel. (044)444-3364, E-mail: maiborod@ipms.kiev.ua

The anisotropy of a tensile strength limit sB and of a differential thermopower ET in the sheets plane of the multilayered Cd-Zn and Cu-Zn composite materials were investigated. The correlation between the angular dependences of sB and ET has been found and has been shown to be determined mainly by the anisotropic distribution of the long-range stress fields dislocations rather than the crystalline texture.
Keywords: anisotropy, multilayered composite materials, strength limit, differential thermopower.

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N.V. Gloskovskaya1, V.V. Ilyin2, K. Heinzinger3

Surface Relaxation and Vibrational Properties of Magnesium Oxide Clusters

1M.M. Bogolyubov Institute of Theoretical Physics NAS Ukraine,
14b, Metrologichna Str., 03143, Kyiv; E-mail: nglos@bigfoot.com
2The Weizmann Institute of Science,
76100, Rehovot, Israel, E-mail: ilyin@wisdom.weizmann.ac.il
3Max.-Planck-Institute für Chemie (Otto.-Hahn.-Institute),
6500, Mainz, Germany, E-mail: khh@mpch-mainz.mpg.de

Lattice dynamics of neutral cubic magnesium oxide clusters, containing 4, 8, 64, 216 and 512 ions, are studied in the frames of polarization model. The procedure to find relaxed equilibrium configuration of the clusters has been worked out and realized. All considered clusters relax inwards and become slightly rounded; the shifts of magnesium ions are larger than oxygen ones. Energetic characteristics of these systems are studied on the base of calculated generalized frequency spectra. Size dependency of vibrational properties of the clusters is analyzed. Obtained values of vibrational spectrum density are in agreement with both experimental data and the results of calculations within the Kellermanns model. The peak of vibrational density of states is shifted to the high-frequency region owing to the relaxation effect.

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I.V. Gutsul, A.A. Ashcheulov

The Influence of Thermoconductivity on the Parameters of Anisotropic Thermoelement

Juri Fedkovich Chernivtsi National University,
2, Kotsubinski Str., Chernivtsi, 58012, .(037-2)54-72-42, E- mail: ss-dpt@chnu.cv.ua

The influence of the thermoconductivity anisotropy on the transversal component of thermoelectric field strength for different orientation of the plate and the thermoconductor is considered. The expressions for the main parameters of the anisotropic thermoelements (AT) are presented.

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I.I. Patskun

Research of Impurity and Band Structure by Laser Spectroscopy Methods

M.P. Dragomanov National Pedagogical University
9, Pyrogova Str.,. Kyiv-30, Ukraine

In GaP, depths of occurrence of energy levels of impurity centres, as well as depths of occurrence of critical points of the first order in V- and C-bands, are defined. A scheme of optical transitions, critical points of the first order and energy levels of impurity centres in the energy gap of the crystal has been charted.

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V. Nadtochy, M. Golodenko, M. Nechvolod, I. Zhikharev, O. Perig

Movement of Dislocations in Semiconductors Caused by the Stress Gradient

Slovjansk State Teacher-Training Institute,
Slovjansk, 84116, Ukraine, 84116, E-mail: slavgpi@slav.dn.uaa

The movement of dislocations caused by stress gradient in the bent Si crystal plate with slanting ends was investigated. From the equilibrium conditions of the plate subjected to pure bending there was obtained stress distribution in the plate as well as vacancy concentration distribution. By means of optical microscopy there were observed the tracks of the dislocations moving under the action of the osmotic forces caused by the flows of the nonequilibrium vacancies. Experimentally measured dislocations creeping velocity checks well with theoretical estimations.

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D.. Freik, R.Ja. Mykhajljonka, V.M. Klanichka

Defect Subsystem and Thermal-Electrical Properties germanium tellurides solutions at the double doping by copper and bismuth tellurides

Physial-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine, E-mail: E-mail: freik@pu.if.ua

Crystall-Quasichemical Mechanism doping germanium telluride by Cu2Te and Bi2Te3 is proposed, and analysis of defect subsystem solution is provided.

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H.P. Kovalenko, I.A. Shuda1

Influence of Quadratic-Nonlinear Element and Spontaneous Radiation on Parameters of Giant Pulses of Solid-State Lasers

Sumy National Agrarian University,
160 Kirov Str., Sumy, 40000, Ukraine, tel. (0542) 28-84-09
1Sumy State University,
2,Rymskogo-Korsakova Str., Sumy, 40007, Ukraine, tel. (0542) 39-23-84, E-mail: akam@chereda.nef

Speed equations of dynamics for solid-state lasers in the mode of generation of giant pulses in non-dimensional form is examined, solution for the system of differential equations with respect to parameters' variation is investigated, the influence of nonlinear component on the following parameters of giant pulses as: maximal value of intensity, finite quantity of inversion, time of pulse duration and pulse power is shown.

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O.M. Bordun, I.Yo. Kucharsky

The Centers of Luminescence in Ceramics Bi4X3O12 (X = Si, Ge, Zr)

Lviv Ivan Franko National University, Physical Department,
50 Drahomanov St., Lviv, 79005, Ukraine, E-mail: bordun@wups.lviv.ua

The spectra of luminescence of ceramics Bi4X3O12 (X = Si, Ge, Zr) are studied. The decomposition of the luminescence spectra into elementary components by the Alentsev-Fock method showed that they consist of three bands with maxima at 2.8, 2.45 and 2.1 eV in Bi4Si3O12, 2.7, 2.4 and 2.05 eV in Bi4Ge3O12 and 2.65, 2.38 and 2.05 eV in Bi4Zr3O12. The interpretation of separate bands was carry out.

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N.I. Poletaev, A.V. Florko, A.N. Zolotko, S.V. Kozytsky1

Heat Exchange of the Submicron MgO Particles during High Temperature Condensation

Combustion and Advanced Technologies of Odessa National University
65026, Odessa, Ukraine, (048) 633-633, E-mail: vov@ictg.intes.odessa.ua
1State Maritime Academy, 65029, Odessa, Ukraine

On the basis of the optic-spectral research and the calculation model, the heat-exchange mechanism was defined for submicron MgO particles in the burning zone of individual Mg particle in the atmosphere during the process of their growth at external pressure P=104-105Pa. It was established, that in the beginning stadium the heat-exchange is determined by collision mechanism between gas molecules with coefficient a 0,015-0,02, and with growth process and the pressure lowering, the role of radiation grows and becomes determining in the final stage.

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L.I. Nykyruy

Interference Effects on Lead Chalkogenides Crystals

Physical-Chemical Institute at the Vasyk Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, E-mail: liubomyr@pu.if.ua

It is calculate the interference item, as sum time of relaxation t definition at the simultaneous realization any scattering mechanisms on lead chalkogenides crystals. The Mattisens rule used is confirmation for t calculate.

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L.V. Dekhtyaruk

Size Acousto-Electronic Oscillatory Effect in Metal Double-Layers

Kharkiv State Technical University of building and architecture,
40, Sumska Str., Kharkiv, 61002, Ukraine; tel. (0572) 40-29-13

A size and frequency dependence of an absorption coefficient of a longitudinal acoustic wave energy is investigated theoretically in metal double-layers. We consider the case, in which the wave is propagated along a normal to an interface of the layers. A ratio between thicknesses of the layers dj (j = 1, 2) and an electron mean free path lj are assumed to be arbitrary. A non-monotonic dependence of the value on the ratio of the layer thicknesses is predicted, if the inequality kdj<<1 is held ( is a wave number of the sound wave). If kdj>>1, as a result of finite thickness of the layers, the absorption coefficient of the sound wave energy becomes an oscillatory function of a layer thickness. An amplitude of oscillations depends on a surface and interface scattering. The detailed numerical calculations of function for different values of parameters, which describe a surface and bulk relaxation of charge carriers, have been carried out.

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B.K. Ostafiychuk, V.D. Fedoriv, V.O. Kotsubunskiy, I.P. Yaremiy

The Mechanisms of Defects Formation in Epitaxial Ferrite Garnet Films during an Implantation by Light Ions

Precarpation University,
57, Shevchenko St., Ivano-Frankivsk

The mechanisms of defects formation in epitaxial ferrite garnet films during an implantation by light ions are investigated. The ionization of inner electronic shells of lattice anions as a result of inelastic inhibiting action of an ion results in formation by Ouge-cascade of a multiply charged ion, which will be rejected from a node for account of electrostatic interaction with short-range environment. The allocation of imperfections derivated at elastic and inelastic collisions of an ion lengthways of path is calculated. The process of imperfections elastic formation at an implantation by light ions of medium energies is analysed. The obtained results prove presence of two areas of a structure fracture beginning (in zones of maximal nuclear and electronic losses of an ion).

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V.V. Gozhenko1, L.G. Grechko1, N.L. Dmytruk2 and O.Yu. Semchuk1

1Institute of Surface Chemistry of the NAS of Ukraine,
17 General Naumov str., Kyiv 03164, tel. +380 (044) 444-96-97, E-mail: user@surfchem.freenet.kiev.ua
2Institute of Semiconductor Physics of the NAS of Ukraine

Substrate influence on the optical properties of a small spherical particle is considered in the electrostatic approximation. A set of equations for solving the multipole coefficients of the electrostatic potential expansion is derived for a model system of a homogeneous sphere placed in a homogeneous external electric field near a semi-infinite substrate. In the dipole approximation, the polarizability tensor of the sphere is obtained, and the substrate effects on the optical spectra of the sphere are analyzed.

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A.V. Shamshurin, N.P. Efrjushina, S.L. Tamazlikar

Crystal-Field Parameters of Mn2+ Ion in Solid Solutions Based on Zn2Si4 and Zn2Ge4

Bogatsky Physical-Chemical Institute NAS Ukraine,
65080, Lusdorfska str. No 86, Odessa, Ukraine. Tel (0482) 66-20-97, E-mail: a href="mailto:physchem@paco.net">physchem@paco.net

The bands in the excitation spectra of Mn2+ ion have been identified in the solid solutions based on Zn2Si4 and Zn2Ge4. The week-field approximation has allowed to obtain the values of crystal-field parameters. Mn2+ ions produce the luminescence centers with tetrahedral symmttry in this samples. The calculated data agree well with the experimental luminescence and excitation spectra.The possible reasons of increasing the Dq parameter from Zn2Ge4: Mn2+ to Zn2Si4: Mn2+ are discussed.

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O.R. Gumenyuk, Z.F. Tomashik, V.N. Tomashik

Chemical etching of CdTe and Cd1-xZnxTe solid solutions in the H2O2-HJ-tartaric acid solutions

Institute for Semiconductor Physics of National Academy of Sciences of Ukraine,
Kyiv, Ukraine, Kyiv, pr. Nauki, 41; E-mail: tomashyk@isp.kiev.ua

Kinetics of physico-chemical interaction of CdTe and Cd1-xZnxTe solid solutions in the H2O2-HI-tartaric acid in reproducible hydrodynamics condition has been investigated. The main regularities of chemical etching of these semiconductor materials were determined and surfaces of equal etching rates (Gibbs diagrams) are built. Regions of polishing and unpolishing solutions were determined and etchant compositions for chemical dynamic polishing of CdTe and Cd1-xZnxTe solid solutions were optimized. Keywords: polishing, cadmium telluride, solid solution, surface, etching composition, kinetics.

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V.. Boychuk

Crystall-Quasichemical Sense of Gallium Impurity on Lead Telluride

Vasyk Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000

The analyse of doped mechanism gallium impurity on crystall structure of lead telluride by crystall-quasichemical methods is provide. The two possible mechanisms of doping influence are analizing: implantation of galium on tetrahedral space and substitution of lead on octahedral space of compact packing by tellurium atoms.

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O.V. Dzyupyn, L.. vankiv, .V. Ketsma

About ratio between concentration of adsorption center and their chemisorption activation energy

Lviv Ivan Franko National University, Physical Department,
Drahomanov St., 50, Lviv, 79005, Ukraine; E-mail: ketsman@wups.lviv.ua

The presented paper explains the experimental dependence between the concentration of adsorbion centers and activation energy of cemisorbsion obtained from the adsorboluminescence studies of Mg upon oxygen adsorbion. The mechanism of chemisorbed oxygen dissociation is revealed.

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O. Bodak1, Yu. Gorelenko1, V. Yarovets2

Crystal Structure and Physical Properties of RNi5Si3 Compounds (R = Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) and Y(FexNi1-x)5Si3 Solid Solution

1Lviv Ivan Franko National University, Physical Department,
Lviv, 79005, Ukraine
2National University Lviv Politechnics,
79013 Lviv, Ukraine

The crystal structure of DyNi5Si3 and LuNi5Si3 was determined. The structural characteristies of DyNi5Si3 compound are following: space group Pnma, lattice parameters a = 1,867(8)nm, b = 3,790(1)nm, c = 0,6634(3)nm; all atoms distribute in 4 (c) (x1/4 z) positions: Dy (x= 0,142(1), z= 0,882(4), Biso = 1,00); Ni(1) - (0,292(3), 0,673(7), 1,04); Ni(2) (0,497(5), 0,359(7), 2,52); Ni(3) (0,008(4), 0,633(6), -0,14); Ni(4) (0,112(3), 0,364(7), 2,63); Ni(5) (0,298(3), 0,070(6), -0,09); Si(1) (0,419(7), 0,099(6), 0,30); Si(2) (0,236(6), 0,383(8), 1.54); Si(3) (0,413(6), 0,635(9), 0,88), respectively. The reliability R-factor value of 0.089 was obtained. Bravais space lattice parameters of LuNi5Si3 compounds are = 1,849(2)nm, b = 0,3739(3)nm, and = 0,6710(2) nm The temperature dependencies of the magnetic susceptibility fit the Curie Weiss law in 83 1150K temperature range except the YNi5Si3 and LuNi5Si3 compounds which are related with Pauli paramagnets. The values of effective magnetic moments per formula unit are in good agreement with the calculated ones for the respective R3+ ions. The magnetic measurements show the absence of any magnetic moments on Ni atoms. Negative value of the Weiss parameters suggests the antiferromagnetic ordering in the normal paramagnetic compounds at low temperatures. sf scattering mechanism is preferable in the resistivity vs temperature behavior of the compounds with Y, Gd and Tb.

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P.I. Ignatenko, N.A. Klyachina, A.A. Goncharov, M.U. Badekin

Structure, Kinetics of Growth and Properties of the Nitride of Films Nickel and Natrium Obtained by Reactive Sputtering

Donetsk national university, Ukraine,
24 University St., Donetsk, 83055, Ukraine

The method of corpuscular doping obtains of a multiphase film containing apart from nickel nitrides and natrium, nitrides of a titanium, and also oxides. The growth of films of nickel is described by the linear law, and films of nitride of natrium-parabolic law. The adhesion of films is appers in twice high, with what of films, obtained ordinary of reactive sputtering. The resistivity of films of nickel nitride oscillates in limits from 0,44 up to 1,151012 mW.

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P.I. Melnyk, L.O. Kapelyukh, P.V. Datsko

Eutectic Structure Formation on Plasma Raising Iron Powder

11Vasyl Stefanyk Prekarpathian University
2Ivano-Frankivsk National Technical University of Oil and Gas

Structure formation on raising layer of iron on steel at the diffusion chroming processes after his cementation is research. It is shown, that eutectic structure is dependence on both carbon and chromium consists on layer and temperaturing of diffusion chrominium.

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A.V. Besov

Plasma Technology in Tooth Prosthetic Appliance

National Technical University Kyiv Polytechnical Institute,
39, Peremogy Str., 02056, Kyiv, Ukraine, tel (044) 441-15-46

New technology, which may be drift retention layers with any stomatology materials on surface of tooth skeleton by portable plasma device, is development. It is show, this technology create a strong adhesion of plasma surface with facing material.

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A.N. Doniy, A.A. Kulinich, .G. Gzovsky, O.O. Rjabinina

Influence Alloying Composition l0,8ҳ0,7 on Structure and Mechanical Properties of a Foundry Alloy Al-5,5%Mg-2,5%Zn

NTU "KPI", Kyiv, Ukraine

The influence modifying alloying composition l0,8ҳ0,7 on structure and mechanical properties of a foundry alloy Al-5,5%Mg-2,5%Zn is investigated. The positive influence given alloying composition as effective of the modifier of a grain is shown.

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V.G. Khyzhnyak, V.. Korolj

Mecanical Properties of Carbide Covering with Titanium and Chromium on Steel U8

NTUU KPI Ukraine, Kyiv 03056 av. Peremogy, 37

Became researched endurance 8 at different aspects of trials, the experimental outcomes have shown, that carbides of a coating in 25 - 30 times effectively boost endurance of steel depending on a mode of trials. In operation is shown, that microdurability, index of microfragility are in effective performances complementary microhardness and mirroring influence of a tension, the structures, defects of a material of a coverage on its resistance to wear.

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O.P. Onufryk

The Role of Mobil Electrons in Heat Radiation of Solid bodies

Precarpathian University named by V. Stefanyk
.:59-61-09. -mail: re@pu.if.ua

The phenomenon of thermal electromagnetic radiation of a solid by mobile electrons is esteemed at their inhibition during interference from atoms.

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N.V. Nikolenko, A.D. Grabchuk, V.G. Vereschak

Influence of surfactants on zirconium hydroxide dispersity

The Ukrainian State Chemical Technology University
49008, Dniepropetrovsk, Gagarin av.,8, E-mail: nick@academy.dp.ua

The opportunity of reception of monodispersible Zr(OH)4 powders by zol-gel method of synthesis was investigated. It is offered to distinguish primary and secondary polymerisation of hydroxide. It is shown, that the adsorption of surfactants retards processes of polymerisation and increases a degree of monodispersity of hydroxide.

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.pdf (537kb)

S.P. Novosyadlyy

The Radiation Charging Model of C-MOS Transistors of Submicron VLSI Technology

Vasyl Stefanyk Prekarpathian University

The described model enables to evaluate radiation resistance C-MOS structures of VLSI during their a-irradiation by assessing of the threshold voltages shift.

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