The Feature of Defect Formation Mechanisms on AIVBVI Compounds Semiconductor Films
Ivano-Frankivsk National Technical University of Oil and Gas,
15, Karpatska Str., Ivano-Frankivsk, 76019, Ukraine
Influence of inlying mechanical tensions, and also remaining oxygen on processes of defect formation in films of lead chalkogenides, grown on different substrates is considered. It is cleared up mechanism of formation of metallic phase in case of films growing from the vapour phase. A kinetics of surface concentration of electrons taking into account the complex formation of own defects with oxygen is considered.
A.D. Zamkovets, S.M. Kachan, A.N. Ponyavina
Optical Properties of Thin-Film Metal-Dielectric Nanocomposites
Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus,
70, F. Skaryna Av., Minsk, 220072, Belarus, E-mail: firstname.lastname@example.org
The method for preparation of metal-dielectric nanocomposites with a layered periodic subwavelength structure is proposed. For systems containing silver and copper nanoparticles monolayers the influence of interlayer parameters on transmission/reflection spectra, as well as their absorbency over the spectral range of the surface plasmon frequency has been established and investigated. The quantitative description of the experimental data is made on the base of the statistical theory of multiple scattering of waves.
Key words: metalline nanocomposite, surface plasmon, photonic crystal.
V. Kasiyanenko, V. Martyniuk
Features of a Structure of a Zone of Conductivity in High-temperature Ñeramics of System 1:2:3 alloying K and Zn
Vinnytsya State Technical University
95, Hmelnytsk Road, Vinnytsya, 21021, Ukraine
With the purpose of understanding of a parity between baric and copper stehiometry, electronic structure, the volumetric maintenance of phases and temperature of transition in a semi-conductor condition in system 1:2:3, we have lead alloying for õ=25 on potassium and zinc. The results received by us, provide an estimation Tc and enable to connect its size with electronic structure. Our analysis testifies that possible value Tc depends from structure f-conditions in a zone of conductivity. Also influence on temperature of semi-conductor transition of replacement in cation to a sublattice is revealed which is caused by possible influence segregation phases of separate elements on phase structure on border of a grain is revealed. The analysis of features of zoned structure which is carried out by us on the basis of theoretical calculations, provides, that Tc depends on density of electronic conditions near to level Fermy N(EF). Comparing experimental and theoretical results, we came to a conclusion, that for reception of a full power spectrum of a zone of conductivity it is necessary to take into account influence of discrete - electronic effects on unit in atom of Âà.
O.Y. Anan’yina, A.S. Yanovs’ky, A.P. Kotlyarov
Simulation of Atomic Hydrogen Interaction with Vacancy Defect on Ge(100) Surface. SSEM
Zaporizhzhya State University,
66, Zhukovsky Str., Zaporizhzhya, 69063, Ukraine, Email: email@example.com
The results of quantum-chemical calculations of hydrogen adsorption and desorption processes on clusters, simulating vacancy defect on Ge(100), are presented in the work. The possible reaction mechanisms at different coverage of such surfaces by dihydride and monohydride chemisorption phases are discussed. The comparison of simulation results with experimental data for ordered and disordered Ge surfaces is carried out.
A. Savitskjy, Ye. Nykonyuk, O. Parfenyuk, M. Ilashchuk, P. Fochuk, P.Feichuk
Cd1-xZnxTe Crystals Photoelectric Properties, Grown by High Ar Pressure
Chernivtsi National University,
2, Kotzyubynskiy Str., Chernivtsi, 58012, Ukraine,
Phone: +380(372) 58-47-45; fax: +380(372) 55-18-05, E-mail: firstname.lastname@example.org
Characteristics of CdTe and Cd1-xZnxTe (x<0,2) single crystals, grown by HPBM at different synthesis conditions and with Ar pressure of 60-120 atm in PHASE laboratory (CNRS, Strasbourg), were studied. At lower Ar pressure (60-70 atm) and preliminary synthesis with following overcharging in another ampoule it is possible to get low-resistance p-type crystals, similar to traditional Bridgman method. The semiinsulating CdTe and CdxZn1-xTe (x<0.2) bouls can be grown (without overcharging) at PAr>120 atm. By photoelectrical measurements positions of 5 deep levels (0.5; 0.8; 0.93; 1.23; 1.42 eV) were determined. The bulk uniformity of semiinsulating crystals was worse.
Key words: semiconductors, crystal growth, deep levels, photoelectrical properties.
V.I. Prysyazhnyuk, O.G. Mykolaychuk
Structural Features, Kinetics of Crystallization and Physical Properties of GdFe2-films
‘Ivan Franko’ L'viv National University,
Physical Department, Chair of Physics of metals,
8à, Kyryla & Mephodiya Str., L'viv, 79005, tel. 96-43-06, E-mail: email@example.com
Amorphous and crystalline films of GdFe2-compounds were obtained. Influence of the technology of receiving on a films structure and the kinetics of crystallization for amorphous films is investigated. The temperature dependences of conductivity and thermoelectric power for GdFe2-amorphous films are obtained.
Ya.P. Saliy, R.Ya. Saliy1
Space Correlations Effects in the Processes Controled by Atom Capture
‘Vasyl Stefanyk’ Precarpathian University,
57, Shevchenco Str., Ivano-Frankivsk, 76025, Ukraine,
1‘Taras Shevchenko’ Kyiv National University,
64, Volodymyrska Str., Kyiv, 0017, Ukraine
In the present paper some effects of many - particle correlations A+B->A are considered. The influence of sink distribution upon the space distribution of immobile and mobile atoms and their capture rates have been studied.
S.I. Drapak, V.Ì. Kaminsky, Z.D. Kovalyuk, V.V. Netyaga, V.B. Orletskyy
The Influence of Hydrogen on Electrical Properties of Contact Sn-p-InSe
Chernivtsi Department of Institute of Materials Sciences Problems NAS of Ukraine,
5, Iryna Vilde Str., Chernivtsi, 58001, Ukraine
ÄThe influence of hydrogen intercalation on indium monoselenide is investigated measuring electrical properties of based on it photosensitive structures to metal-insulator-semiconductor (MIS) and Mott diode (MD). It is established that intercalation of the basic semiconductor with hydrogen leads to the improvement of diodic properties of the MIS structures whereas those for the DM structure becomes worse. For the both structures current transport mechanisms are analyzed on the basis of their band diagrams.
S. Vashkevych, Ì. Berkeschuk, Î. Poplavskiy
Influence of Heat Treatment and Electronic Irradiation on Element Composition of Films MgO
Vasyl Stefanyk Prekarpathian University, Physical Faculty,
201, Galytska Str., Ivano-Frankivsk, 76008, Ukraine
Research of films MgO was conducted by the method of Ouge-electronic spectroscopy. In work the films MgO were explored got the method of high-frequency dispersion under various conditions (in the environment of argon and in the environment of argon with oxygen). Computations of quantitative element composition of films were conducted on the basis of the program, developed in a programming language Delphi 5.0. Authenticity of computations was checked up by means standard samples of high cleanness. The use of the program considerably simplified work. It is exposed, that in films of got in the environment of argon there is violation of stoichiometric composition in the side of surplus of magnesium, and films were got in the environment of argon with oxygen of violation of stoichiometric insignificant.
B. Andriyevsky, A. Patryn
Dispersion of Refractive Index of Dielectrics as a Basis for Reconstruction of Fundamental Absorption Spectrum
Technical University of Koszalin, Faculty of Electronics,
17, Partyzantów Str., Koszalin, PL-75-411, Poland
The method for reconstruction of the material’s absorption spectrum k(w') in the range of fundamental excitations (w') on the basis of the refractive index dispersion n(w) in the range of its transparency has been elaborated and applied to the investigation of ferroelectric crystal TGS. The deviation of the refractive index dispersion of TGS crystal from the expected behavior can be explained by the change of dispersion relation caused by the interaction of optically active valence electrons. Temperature dependence of the parameters of this interaction in the region of phase transition of TGS crystal (Tc=49oC) is discussed.
Keywords: absorption spectrum, refractive index, phase transition.
O.V. Galochkin, S.G. Dremluzhenko, Y.D. Zakharuk, A.I. Rarenko, E.V. Rybak,
Surface and Interface Investigation of Structures Created on Cd1-xZnxTe and Cd1-xMnxTe by Laser Melting
Chernivtsi National University by Yuriy Fedkovich,
2, Kotsyubynskiy Str., Chernivsi, 69063, Ukraine, Å-mail: firstname.lastname@example.org
The surface morphology and structure of melting layer of Cd1-xZnxTe, Cd1-xMnxTe solid solution irradiated by ruby laser has been investigated by scanning electron microscope method. It has been shown the possibility of ohmic contacts creation by laser melting of subcontact layer.
V.V.Ivchenko1, A.N.Sergeev1, V.S.Elnik1, and N.M.Chuiko2
Absorption Edge of Cadmium Arsenide
1Kherson State University, Chair of Physics,
27, 40 Rokiv Zhovtnya Str., Kherson, 73000, Ukraine,
Phone: +380-0552-326768, E-mail: email@example.com
2Kherson State Technical University, Department of Cybernetics,
24, Berislavske Shosse, 73008, Kherson, Ukraine,
Phone: +380-0552-516332, E-mail: firstname.lastname@example.org
The experimental data of the Cd3As2 absorption edge at low temperature are analyzed for single crystals. The anisotropic Bodnar band model is used to calculate the absorption coefficient. The best fit of the theoretical curve to experimental points is found for the following band parameters: eg=-0,1 eV, D=0,33 eV, P=8·10-10eV·m, ä=0,12 eV. The effect of linear in wave vector term in the dispersion equation on the fine structure of the optical absorption spectrum is also discussed.
Keywords: cadmium arsenide, electronic band structure, Bodnar model, dielectric function, optical transitions, spin splitting of bands.
A.D. Pogrebnjak1, Î.P. Kul’ment’eva1,2,
A. Marcu3, A. Lebed2
Production Mono- and Two-Layers Films on the Base of + YBa2Cu3O7-X Using Laser Plasma Ablatio
1Sumy institute for modification of surface,
87, Romenskaya Str., bild. Ì, PO box 163, Sumy, 40030, Ukraine;
ph. (054-2) 21-28-16, fax (380 542) 22-03-38; E-mail: apogrebnjak@s³mp.sumy.ua/a>
2Sumy State University,
2, R.-Korsakov Str., PO box 227, Sumy, 40030, Ukraine;
ph. (054-2) 33-90-18, E-mail: email@example.com
3Institute of Atomuc Physics, Romania
The results of deposition films of high-temperature superconducters on a base YBa2Cu3O7-X from ablation plasma by the pulse laser influence, which directed with help special reflector and a mask on the substrate are submitted. It’s shown, that quality of films the arrangements of a substrate and thickness of a film depend on a corner of plasma reflection. The surface morphology of films is investigated and are determined the roughness and thickness of the film depending on a corner of reflection ablation plasma.
M.M. Slyotov, Ya.N. Barasyuk, M.V. Demych, A.G. Buzhnyak, V.G. Tomin
Optical Properties of the Surface Modified Layers CdTe<O>
Yriy Fedkovych Chernivtsy National University,
2, Kotsubynskyy Str., Chernivtsy, 58012, Ukraine,
tel: (03722) 44221, E-mail: firstname.lastname@example.org
Optical propertys’ of the surface layers of cadmium telluride is investigated. It is shown that the annealing of the crystals lead to the emerging of the modified layers. The geometrical and the physical properties of the layers determine by the isovalent impurity of the oxygen.
O.N. Yurchenko1, I.D. Olekseyuk1, S.S. Novosad2
Luminescent Properties îf ÑdI2 Single Crystals, Doped with Ñu²2
1‘Lesya Ukrainka’ Volynj State University,
13, Voli Av., Lutsk, 43025, tel: (03322) 48427, E-mail: email@example.com
2Ivan Franko Lviv National University,
50, Dragoanov Str., Lviv, 79005, Ukraine
The researches of radiation spectra of Cu²2-doped and pure Cd²2 single crystals are performed at X-ray and laser excitations.
Î.S. Chernyuk1, Z.F. Tomashik2,
V.I. Grytsiv1, V.M. Tomashik2, V.M. Kashpor1
Chemical Interaction of GaSb and GaAs with the Etching Compositions of the HNO3-HBr(HCl)-H2O Systems
1I. Franko Zhytomyr Teaching University,
40, V. Berdychivs’ka Str., Zhytomyr, Ukraine; e-mail: firstname.lastname@example.org
2V.Ye. Lashkaryov Institute for Semiconductor Physics of National Academy of Sciences of Ukraine,
41, av. Nauki, Kyiv, Ukraine; e-mail: email@example.com
Kinetics and mechanism of chemical interaction of GaAs and GaSb with the solutions of the HNO3-HBr(HCl)-H2O systems in reproducible hydrodynamics conditions has been investigated. The main regularities of chemical etching of mentioned above semiconductor compounds were determined and surfaces of equal etching rates were built. The influence of the HBr/HNO3 ratio in the solutions HBr-HNO3-H2O on the GaAs and GaSb etching rates has been determined also. The reason of elementary antimony formation on the surface of GaSb at its chemical etching in the solutions HBr–HNO3–H2O were determined using the measurements of self-dissolution potentials of GaSb, Sb and Ga in the such ethicng compositions.
D.M. Freik, ².M. Ivanyshyn, L.Y. Mezhylovska
Nonstoichiometry and own point defects of tin telluride
Vasil Stefanyk’s Precarpathian University,
57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
The analysis of defect states at the mechanisms of nonstoichiometry and selfdoping in Tin Telluride by the crystalloquasichemical method at the condition existing of doubly- and quadri charged Tin vacancies is made.
Z.F. Tomashik, E.M. Lukiyanchuk, V.M. Tomashik
Chemical Etching of the InAs and GaAs Single Crystals in the Solutions of the H2O2-Unorganic Acid Systems
‘V.E. Lashkarev’ Institute of Semiconductor Physics of NAS Ukraine,
41, Nauky Av., Kyiv-28, 03028, Ukraine ; E-mail: firstname.lastname@example.org
The nature of chemical dissolution of InAs and GaAs single crystals in the solutions of the H2O2-HNO3, H2O2-H3PO4, H2O2-HCl and H2O2-H2SO4 systems in reproducible hydrodynamics conditions has been unvestigated. The main pecularities of chemical etching of these semiconductor materials and concentration regions of solutions which can be used for the development of etching compositions fot the chemico-dynamic polishing of InAs and GaAs were determined.
The Frequencies Spectrums by Quantum-Chemical Calculations of GenSm Clusters (n = 2, m = 3, 5-7; n = 4, m = 3)
Uzhgorod national University, 32, Voloshyn Str., Uzhgorod, 88000, Ukraine, E-mail: email@example.com
The atomic configurations, total energies, formation energies and vibration spectrums of GenSm clusters are calculated by ab initio method. The formation energies of GenSm chain clusters are decreasing with increasing of chain length. Among the tetrahedral clusters greatest formation energy has cluster with Ge-Ge bond. The base line in Raman spectrums of chain clusters is at 348 ñm-1 and does not depend on length and type of final atoms of chain. The most intensive line of tetrahedral clusters shifts from 333 up to 380 cm-1 in the next order: Ge2S7H6, Ge2S6H4, Ge2S6H6. The feature of Raman spectra of e2S6H6 cluster with Ge-Ge bond is presence of band at 250 ñm-1 and that’s one of edge sharing tetrahedrons GeS4/2 (cluster Ge2S6H4) – line at 424 ñm-1.
T. Tatarchuk, G. Boyko, S. Lisnyak, D. Protskiy, N. Orynchuk
Crystalquasichemical Investigation of Influence of Admixtures on Reactionary Ability of Hematite
Vasyl Stefanyk Precarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
In the article the influence of donor (Li2O, MgO) and acceptor (TiOsub>2) impurity on the nature and concentration of defects in hematite is explored. Reactionary ability Fe2O3 was determined by concentration of ions Fe+3 in water solution of salt acid. It is set, that regardless of nature of defects reactionary power of intercalating exemplars, higher it is comparatively with own reactionary power of hematite. The mechanism of action of admixtures is first grounded on the basis of chemistry of semiconductors from positions of the charged localized and nonlocalized defects.
A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, I.V. Pavlovsky
The Effect of Strain on the Impurity Conductivity of Silicon Whiskers in the Range of Metal-Insulator Transition
National University “Lvivska pol³technika”, Sci.-Research Center “Crystal”,
1, Kotlyarevsky Str., Lviv, Ukraine, 79013,
Tel.: +38 (0322) 721632, E-mail: firstname.lastname@example.org
The effect of strain on the impurity conductivity of boron doped silicon whiskers in the wide temperature range 1.7-300 K and in the magnetic field up to 14 T was studied. It was shown that the peculiarities of strain-induced changes of resistivity of silicon whiskers reveal them self in the region of metal-insulator transition at liquid helium temperatures as in the presence of magnetic field and in the absence of magnetic field. The effect of strain on the changes of activation energies for impurity conductivity was analyzed also.
T. Boczar, P. Frącz, D. Zmarzły
Analysis of the Light Radiation Spectra Emitted by Electrical Discharges in Insulation Oil
Technical University of Opole, Poland
The paper presents the measurement results of the optical spectrum of the light emitted during disruptive electrical discharges in the plane-point system. Optical spectra are presented for the electrode of various point inclinations. The measurements were taken using a spectrometer with a diffraction grating with a semiconductor CCD. An interpretation is presented of the occurrence of extrema in optical spectra coming from the change of energetic state of elements that are part of an electrode and occur as a result of free gas generation. For comparison, the optical spectrum run for electrical discharges of the surface type is presented. Keywords: optical spectrum, electrical discharge, surface.
V.V. Brailovsky, P.P. Vatamanjuk, P.M. Shpatar
Registor of Capacity of the Parametrical Capacitor with System PLL
Chernivtsy National University, Radio Engineering dept.,
2, Kotsubynskyy Str., Chernivtsi, 58000, Ukraine
The registor with system PLL is intended for measurement of capacity of the parametrical capacitor by a resonance method. The basic parameters of the registor, theoretical estimations and circuit realization are investigated. Sensitivity of measurement of capacity is 0.1 fF.
A.². Kostrj³tsk³y, E.N. Naumova
To a Problem on S³mulat³on of a Phys³co-Chem³cal S³tuat³on in Pores of Cathode Coat³ngs on Steel
Odessa Nat³onal Academy of Food ²ndustry,
112, Kanatna Str., Odesa, 65039, Ukra³ne,
phone (0482) 29-11-31, E-mail: profAIK@ipss.net
The phenomenolog³cal model of germ³ng and development of local corrosion locuses ³n pores of cathode coat³ngs on steel ³s offered. ²n the fundamentals of th³s model the mechano-chem³cal mechan³sm of development of corros³on processes ³n t³ghtly deformed metal ³s f³xed. At a stage of corros³on seat germ³ng ³t ³s necessary to take ³nto account the electrochem³cal heterogene³ty of a surface. ²t is offered to take ³nto account a jo³nt act³on of the electrochem³cal and mechan³cal factors, and also strength loss act³on of hydrogen for an est³mat³on of a phys³co-chem³cal s³tuat³on ³n corrosion seat. The design formulas for an estimation of the contribution of separate corrosion seats in a general picture of electrical fields forming near to a surface of porous cathode coating are offered, the features of electrode processes flow in pores of coatings of different width are discussed.
S.V. Kozytckyy, V.P. Pysarskyy1, D.D. Polishchuk1
Peculiaryties of Obtaining of ZnS-polycrystals by means of Self-propagating High-temperature Synthesis
National Sea Academy,
8, Didrikhson Str., Odessa, 65029, Ukraine Email: email@example.com,
1’I.I. Mechnikov’ National University,
2, Dvoryanska Str., Odessa, 65000, Ukraine Email: Pysvitp@te.net.ua, Vovchyk@ukr.net
The mechanism of reaction and formation of ZnS by means of Self-propagating High-temperature Synthesis (SHS) method was investigated. A mixture of Zn and S powders was pressed forming a cylinder that was placed in a high-pressure vessel filled with inert gas. Polycrystalline ZnS was formed as a result of propagation of the front of chemical reaction along the initial mixture. The heat released in chemical reaction produced melting of initial components, and high pressure stimulated reaction in liquid phase. The quality of product and completeness of chemical transformation is definite function of pressure. The qualitative ZnS may be obtained when pressure in vessel is above 4 MPa – in this situation we got the final product with completeness of chemical transformation 99.5%. The mechanism of luminescence in SHS - ZnS (polycrystalline) is the same as for the monocrystalls. We suppose that SHS-ZnS may be used as a luminofor.
L.M. Zaychenko, A.I. Seredyuk1, V.D. Fotyj2
Physical-Chemical Particulates of Fe-Electrodes Fabrication and tem using for Ni-Fe-Batteries
OAC “Quartz”, 246, Golovna Str., Chernivtsy,
1Lviv department of current sources IPM NAN, 1, Patona Str., Lviv,
2DTB “Foton-Quartz”, 246, Golovna Str., Chernivtsy
Physical-chemical and technological particulates of submicrone Fe–powder fabricate for Ni-Fe-batteries was explored. Technologies carbon and hydrogen reconstruction of iron and defects Ni-Fe system by comparison with Ni-Cd system was investigated. Reasons of spontaneous loss capacity of Fe–electrodes were investigated. Technology fabricated of Fe–active mass and stabile electrodes was offered.
New Problem of Physics and Chemistry of Solid State: Mesoscopical Disordered Medium
‘O.Ya. Usykova’ Institute of Radiophysics and Electronics, National Academy of Sciences of Ukraine
12, Proskury Str., Kharkiv, 61085, Ukraine
The issue of the day modern materialoznavstva are up to the so called consolidated materials and dispersion systems, that are initial raw material of their synthesis, and the condensed tverdofazni systems are the basic object of researches of physics and chemistry of solid (from point of materialoznavstva-compactni there are materials). This situation generates the definite conflict between the noted disciplines, conditioned by disparity in determination of basic object of researches, and this same formulates the problem of revision of maintenance of notion „a solid” is that ob–rountovoue necessity of expansion of spectrum of fundamental researches, which is up to the mezoscopichnoi unsettled state. As mezoscopichno lacking amenities environments are studied in different spheres of scientific activity, it follows to examine the outlined problem as migdistsiplinarnou.