< Journal Physics and Chemistry of Solid State (Volume 3, Number 3, English version)

2002   3    3


I.M. Smolensky

Photochemical mechanisms of the aril structures protecting actions and atmosphere resistance of polyamids (Review)

Ivano-Frankivsk National Technical Oil and Gas University,
15,Karpatska St., Ivano-Frankivsk-19, Ukraine, 76019 E-mail:ismolensky@ifdtung.if.ua

It is the first time, when by the spector-luminescent, kinetic, themogravimetric and physical-chemical methods, light protecting properties of the directly synthesized UV-absorbing aril(oxyamid and benzoltriazol) additions (ai) and their model structures in the process of photooxydation degradation of aliphatic polyamids in the kinetic area under the impact of long-wave, low intensive ultraviolet in izotheric oxygen environment were complexly studied. There were also defined the energies of low E(S1)- singlet and E(T1)- triplet electronically induced states (ai), abnormal stocks shift and specific energy shift within the initial (M) and polar-resonanse (P) bipolar structures; there were also suggested and experimentally proved the protecting mechanisms of kinetic super-screening; there was also developed a method of accelerated WO2-control of polymers photooxidation degradation and light protection efficiency of the introduced additions (ai) so that technical-ecological monitoring of polymers ultraviolet atmosphere resistance could be organized.

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Ya.S. Budjzak, .. Druzhynin, .V. Pavlovskiy, Yu.. Hoverko

Specific Resistance of -Type Silicone at the Screening of Doped Centres by Carrier Current

State University "Lvivska Polytehnika",
12, Bandera St., 79005, Lviv,

The measurement of specific resistance of p-types thread like crystals at the temperature range (4,2-300) . Is shown, at the research samples acceptors screening by holes, that the lead to decrease their activation energy.

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S.I. Procenko

About temperature dependence of the coefficient of longitudinal and transverse tensosensibility of metal films

Sumy State University
2 R.-Korsakov st., 40007 Sumy Ukraine

The problem of temperature dependence of the coefficient of longitudinal γl and transverse γt tensosensibility has been studied. From analysis of equations for thermal coefficient of γl and γt follow that γl and γt increase with temperature increase in polycrystalline and strong dispersed metal films. The values has been received.

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G.V. Zhabyeyev, A.P. Kudin, V.P. Tartachnik

Electrically Active Own Defects in Zinc Diphosphid of Tetragonal Modification

M.P. Dragomanov National Pedagogical University,
9, Pyrogova Str., Kyiv, Ukraine, E-mail:
* Science Centre "Institute of Nuclear research" NAS Ukraine,
47, Nauky Av., Kyiv, Ukraine

On the basis of crystallochemical approaches are obtained baric and temperature dependencies of concentration of charge-carriers and own defects at two-temperature annealing in vapor a component of crystals ZnP2 of tetragonal modification. It was found that the inversion of conductance type in crystals of ZnP2 was caused by single charge defects. Besides, conditions to form crystals of pre-defined electrical properties were determined.

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S.N. Fedosov, A.E. Sergeeva, J.A. Giacometti*, S.G. Polischuk

Switching of polarization and relaxation phenomena in corona poled ferroelectric polymers

Department of Physics, Odessa State Academy of Food Technologies,
str. Kanatnaya 112, Odessa, Ukraine, 65039, E-mail:
*Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo,
CP 369, 13560-970, Sao Carlos, SP, Brazil, E-mail: giacomet@ifsc.usp.br

Polarization build-up and switching phenomena in uniaxially and biaxially stretched PVDF have been studied by a constant current corona poling method. The values of the residual polarization and the coercive field have been found, as well as some other parameters. It has been proved that the residual polarization consists of two components, the stable one and the slowly relaxing one. The stabilizing effect of the space charge has been confirmed.

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Z.V. Stasyuk, M.M. Kozak, B.R. Penyukh, R.I. Bihun

The influence of aluminium and germanium subatoms surfactant layers on electron transport in thin palladium films

Lviv Ivan Franko National University, Physical Department, Drahomanov St., 50, Lviv, 79005, Ukraine

The electrical properties of nanometer thick palladium film deposited on polished glass surface have been investigated. It was shown that subatom Al or Ge layers (mass thickness less than 1nm) hastened palladium films metallization. The experemental results were explained within the framework of the classical and the quantium size-effect theories.

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A. Glot, E. Di. Bartolomeo*, E. Traversa*

Dependence of ZnO/ZnO contact impedance on frequency and air humidity

Dep. of Radioelectronics, Dniepropetrovsk National University,
49050 Dniepropetrovsk, Ukraine, E-mail:
*Dip. di Scienze e Tecnologie Chimiche,Universita di Roma "Tor Vergata",
Via della Ricerca Scientifica, 00133 Roma, Italy

Relative humidity sensitivity of the impedance of ZnO/ZnO contacts between sintered bodies in the range 10-2-102 Hz was measured and a theoretical approach for the explanation of the experimental results is developed. The contact is modelled by a "double Schottky barrier" and a linear resistor connected in series. The calculated frequency dependence of electrical parameters gives a qualitative description of the experimental data.

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D.M. Freik, L.R. Pavlyuk*, M.. Galuschak*, G.D. Mateik*

Atomic defections and phenomenom of self-compensating PbTe<Te>:In

Vasyl Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine,
*Ivano-Frankivsk State University of the oil and gas,
15, Karpatska Str., Ivano-Frankivsk, 76000, Ukraine

On the basis of thermodynamic and quasichemical approaches the basic mechanisms of defect formation in Lead Telluride, enriched by Tellurium and doped by Indium are established. The constants of an equilibrium and enthalpy of defect formation are defined.

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B.K. Ostafiychuk, I.P. Yaremiy, V.I. Kravets, V.D. Fedoriv, L.S. Yablon

The Investigation of Structural Changes in GGG-monocrystal Modified by Boron of the Different Energies

Vasyl Stefanyk Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76025, Ukraine

The results of surface layers researches of GGG monocrystal implanted by boron at energies ranges 80-150 keV with dose 1014 ion/cm2are represented. Is shown, that at an implantation by boron ions the profile of interplanar distance modification for the given dose monotonically downward and can be presented as the total of two profiles, one of which is caused by kernel losses, and second electronic losses.

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S.P. Novosyadliy

Transmission and phase-shifting mask layouts in optical lithography for formation submicrometer structures VLSI

Prekarpathian University named by Vasyl Stefanyk
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine

Submicrometer optical lithography is possible with conventional projection cameras when the mask controls the phase of the light at the object plane. The phase shifting mask consists of a normal transmission mask that has been with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Thus the phase-shifting mask may be the most desirable device for enhancing optical lithography resolution in the VLSI era.

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.V. Demych, .S. Lytvyn*, V.P. Makhniy, .. Slyotov, .V. Stetsj

The Properties of Cadmium Telluride Modify Layers

Yriy Fedkovych Chernivtsy National University,
2, Kotsubynskyy St., Chernivtsy, 58012, Ukraine, tel, (03722) 44221, E-mail:
Institute of semiconductor physics of NAS Ukraine,
45, Nauky Av., Kyiv

Structure, photoelectric and optic properties of the cadmium telluride is investigated. Is shown, that annealing of n-CdTe crystal lead to change of microstructure of the samples surface without influence to main material band parameters.

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. Bitneva, . vych, S. Lisnyak, M. Matkivskyi

Crystaloquasichemical mechanism of solution and oxidation of wustite and the influence of admixtures on the properties of wustite

Vasyl Stefanyk Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine

In the article the cristaloquasichemical mechanism of dissolution and oxidation, influence of nonstoichiometry, nature and concentration of defects of wustite, and also, the influence of the small impurities on its quality has been considered. It was determined that while wustite dissolving in acids, the + absorption first takes place on cation vacancies with the consequent interaction with oxygen of wustite, distraction of the crystalline structure of wustite and transition of Fe2+ and Fe3+ into solution. Free cation concentration increases during the oxidation of wustite, and during further oxidation, the magnetite phase derivates. The influence of admixtures on the nature and concentration of defects was determined.

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L.I. Adeeva, A.L. Borisova

Quasicrystall Alloys as New Perspective Material to Protection Covers

E.M. Paton Institute of electric welding of NAS Ukraine,
11, Bozhenko Str., Kyiv, 03150, Ukraine

The growth, structure, thermodynamics stability of quasicrystalls, as materials with non-general quasicrystall structure are analyzing the mechanical, electrical corrosion, tribo-technical properties of quasicrystall by Ai-Cu-Fe systems and analyzing application of perspective quasicrystall alloys for prospective covers on rockets-, avia- and car-build and on life too.

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L.I. Nykyruy

Thermal Conducivity at the Lead Chalkogenides Electronic Crystals

Physical-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
Shevchenko Str., 57, Ivano-Frankivsk, 76000, Ukraine, E-mail:

Concentration dependence of he thermal conductivity efficient on the n-type lead chalkogenides crystals is investigated with calculation both the carrier scattering and dispersion current of charge.

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P.V. Galiy, .. Nenchuk

Formation of Interphase Boundaries on Surfaces Split of Silicon Monocrystalline

Ivan Franko Lviv National University, physics department,
50, Dragomanova Str., Lviv, 79005, E-mail:

By both methods Auge-electron and masses-spectrometry is research kinetics of shaping of the interphase boundaries on surfaces split of monocrystalline silicon (-S), obtained in high vacuum (in situ), which the cameras inspected masses-spectrometry contact to atmosphere of residual gases superhigh vacuum camera. An investigated element-phase structure of surfaces split c-Si (111) in an dependence from an exposure time in high vacuum and from a doze of an electronic exposure, and also exposure on an air. The conclusion about presence of thin-film coatings adsorbent on surfaces split in situ is made. By methods quantitative Auge-electron spectrometry estimate quantitative component structure of the interphase boundaries and effective thicknesses.

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V. Khyzhniak, I. Pogrebova, K. Yancevich

Physical-chemical conditions of drawing and some properties of diffuse coverings with participation vanadium

National teachnical University Of Ukraine "KPI",
Peremohy av, 37, Kyiv 03056, Ukraine

In the work phizical-chemical conditions were investigated and analysed thermodynamic regularities double components of saturation of alloys through gas chlorines a phase vanadium, titanium, lame and etc. The defined temperature and concentration areas of existence chlorides, carbides, nitrides, oxides in gas and condensed phases for systems with participation one and two saturate of metals (vanadium, vanadium-titanium, vanadium-silicon etc.), iron, chlorine, nitrogen, oxygen. The reduced outcomes of experimental researches of phase structure, some properties and performances of coverings on stells and rigid alloys at complex saturation from powder mixtures with participation vanadium in the closed reactionary space.

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M.M. Bobina, T.V. Loscutova, V.F. Loscutov

Selection of rational structure of initial reagents during the process of carbonaceous steels

National technical university Ukraine "KPI",
Pr. Peremogy, 36, Kiev, 03056, Ukraine

In work for formation rational structures of initial reagents are established on surfaces carbonaceous steels coverings on a basis of carbide s niobium. It is shown, that on all carbonaceous steels on the offered method may be received carbides coverings on a basis of carbide s niobium which consist of two zones: internal - NbC and external - Nb2C. To get rid of phase Nb2C that has smaller microhardness and more fragile, it is possible by increase of the contents carburizer in sating environment, however thus thickness and microhardness of phase NbC is reduced and its fragility is increased.

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O.A. Mishchuk, A.V. Telemko, Yu.G. Gorpinko

Thin film properties of near-surface microvolumes of metal formed by friction

Acad. Palladin Av., 46, Kyiv-142, 03680, Ukraine,

The new laminated thin-film structure of a near-surface zone of high strength steel was formed as a result of friction in medium of a surface-active agent. It is revealed, this structure contained nanocrystalline and submicrocrystalline layers of the different nature, disjointed by amorphous interlayers. The depth of each layer did not exceed the size of one grain. Confirms, that the saturation of surface austenite regions of steel by Carbon during friction is a non-thermal process. The diffusion takes place at rather low temperatures under influencing of elastic deformation. Besides the elasto-plastic deformation of metal results in formation of amorphous interlayers. In the amorphous phase each atom of Iron and Carbon which is not polarized in a local bond with Oxygen, is ionized as a result of transfer of the electron to an adjacent defect of structure. Such model of an amorphous phase finds the experimental substantiation. The outcomes of researches illustrate new capabilities: improved Auger electron spectroscopy analysis as a method for structure analysis of crystalline and amorphous solids.

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D.M. Freik, V.M. Boychuk, L.Y. Mezhylovska, .. Lopyanka

Atomic Defects and Thermal Electric Properties of PbTe-CrTe System

Physics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
Shevchenko Str., 57, Ivano-Frankivsk, 76000, Ukraine, E-mail:

It is proposed crystal-quasichemical formation mechanism of solid solution and analyzed its defect subsystem.

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I. Spiridonova, O. Sukhova

Cr-20Ti-10C particulate metal matrix composites

Dnipropetrovs'k National University,
Nauchny Lane, 13 , Dnipropetrovs'k, 49050, Ukraine, E-mail:

Metal matrix composites containing Cr-20Ti-10C reinforcement fabricated by infiltrating at 1200 C to 1280 C for 30 to 60 min have been investigated. Peculiarities of the formation of the interfaces between Cr-20Ti-10C solid alloy and Fe-3.5B Fe-3.5B-20Cr, Fe-3.5B-5Ti, Fe-3.5B-10Cu, Cu, Cu-20Ni-20Mn liquid alloys (wt. pct) have been determined. Copper only weakly wets Cr-20Ti-10C that does not form any new phases when reacts with liquid copper. The wettability can be improved by adding 20 pct Ni and 20 pct Mn to copper. The wetting of Cr-20Ti-10C by iron-base melts is much better. Fe-3.5B alloy exhibits the smallest contact angle. When raising the infiltrating temperature and prolonging the infiltrating period, wetting properties of Cr-20Ti-10C improve. Difference in wetting behavior of the carbide has been explained using substance configuration model by G.V. Samsonov.

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.. Asheulov, Yu.G. Dobrovolsky, .G. Shayko-Shaykovsky,
V.D. Photiy, .V. Klepikovsky, .S. Romaniyk

Thermoelectric modules Peltye of heightened reliability

The open joint-stock company "Quarts",
str. Golovna, 246,. Chernivtsi, 58032

High-reliability thermoelectric Peltier modules have been developed. Reliability characteristics improvement is achieved at the expense Bi-Te-Se-Sb solid solution 28 - 35 mm in diameter and up to 300 in length characterized up rated mechanical strength being a value of p 80 P, n 100 Pa at = 300 K and by plating ceramic plates with a molybdenum-copper pseudo-alloy. TEM parameters values do not change on ultimate temperature of 213-333 K effect at electric load in cyclic (1500 hours) and continuous (2000 hours) modes. TEM developed resistively to mechanical and climatic factors influence.

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V.M. Babich, Yu.P. Dotsenko, L.A. Mischenko*, M.Ya. Skorokhod

A role of Doping and Residual Impurities in The Formation of Defect Structure and Electrophysical Properties of Oxygen-Containing Silicon Crystals

Institute of Semiconductor Physics, NAS of Ukraine,
45 Nauka Ave., Kyiv, 03028, Ukraine
*State University of information and communication technology,
Solomyanska str.7, Kyiv 03110, Ukraine

On the basis of examination of experimental results received by us with the help of different methods (electrophysical, electron paramagnetic resonance, low temperature photoluminescence and so on) and also those obtained by other authors, an analysis was made of the effect of doping and residual impurities on the processes of defect formation in oxygen-containing silicon crystals. Attention is drawn to the fact that at the early stages of oxygen precipitation (annealings at 450oC) the B doping impurity loses its acceptor properties and interacts with substitutional oxygen thus forming electrically active donor complexes. It is also are considered peculiarities of the effect of isovalent impurities carbon and germanium (or tin) in annealed oxygen-containing crystals on the formation of electrically active thermal donors of oxygen nature and also on the formation of new properties of silicon material. In particular, there were found the same and different features in the behaviour of carbon in germanium when they interact with substitutional oxygen. Model ideas about interimpurity interaction in oxygen-containing silicon crystals are discused.

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.. Bazhyn, .. Trocan, R.. Minikaev, S.V. Chertopalov

Phases and Structure Heterogeneousness of Fullerite Coating on Titanium

Donetsk National University,
24, Universytetsjka Str., Donetsk, 83055, Ukraine,


The phase composition, structure and defection of fullerite films 60, condensed on oxidated and etched surfaces of titanium is investigated by methods of an electronic microscopy. The coexistence face-centered cubic and hexagonal close-packed of modifications of fullerite 60 is shown. The dependence of character of dislocation structure of the state of a substrate has been set.

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D.. Freik, V.V. Prokopiv, U.. Pysklynetsj, I.M. Lischynsky

The Change of Conductivity Type on Cadmium Telluride at the Influence of the Both Technology Factors and Doped Impurity by Indium

Physics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
57, Shevchenko St., Ivano-Frankivsk, 76000, Ukraine, E-mail:

By method of simulation quasichemical reactions of hyperthermal equilibrium of defects change of the conductivity type in cadmium telluride under influencing of technology factors and dopant of indium is describe. The analytical expression for definition of partial pressure a pair of a cadmium PCd* is obtained, which one responds thermodynamic n-p-junction, for both clean and with an impurity of indium of the cadmium telluride. Certain conditions material formation of n- and -type of conductivity with given carriers concentration. Conditions of implementation thermodynamic n-p-junction is explained from temperature and presses by relations of defects concentration.

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I.M. Chernenko, K.V. Chasovskyi, V.F. Katkov

Stabilisation δ-Phase by Films Bi2O3 in 300

Dnipropetrovs'k National University,
Str. Naukova, 13 , Dnipropetrovs'k, 49050, Ukraine

A film α, β, δ and amorphous modifications were gained at fixed values of fractional pressure of oxygen, current of a magnetron and temperature of a substrate. A thickness of films were determened by interference method. Structure and preferred orienteation of obtained films determined by the X-rays analysis in Co radiation on instalation DRON-2.0.

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R.D. Ivanchuk, D.D. Ivanchuk

Surfase magnetic ordering in CdTe:Fe crystals

Yu. Fedkovich Chernivtsi National University,

The results of temperature investigations into magnetic susceptibility ( ) of CdTe doped with iron impurity have been given. One more type of magnetic ordering related to the surbace of doped crystal has been discovered.

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Y.G Sukhenko, A.A. Litvinenko, A.I. Nekoz, V.Y. Sukhenko

The Resistance Of The Gas-Thermal Covers In The Erosion Process Of Wear

Ukrainian State University of Food Technologies
68, Vladimirskaya Str., Kiev, 01033, Ukraine

The article demonstrates the results being got in the research for the cavity and erosion process of wear of the stability of gas-thermal covers -3 on the basis of chromium-nickel alloy in the acid surrounding. We can state that the wear of the steel 20 and the steel 45 under increased in 1,2 up to 2.

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A.A. Ashcheulov, V.G. Okhrem, Ye.A. Okhrem

Eddy Anisotropic Opticothermoelement

Yriy Fedjkovych Chernivtsy National University,
2, Kotsyubynsky Str., Chernivtsy, 580122,
Institute of Thermoelectrisity,
Post, /b 86, Chernivtsy, 58002

The transverse thermo-EMF of anisotropic opticothermoelement (AOT) has been considered from eddy thermoelectric currents point of view. Appearance of potential difference in AOT due to eddy thermoelectric currents presence has been shown.

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Y.T. Solovko, I.P. Yaremiy, V.D. Fedoriv, I.M. Budzulyak, B.I. Yavorskiy*

The block structure model of epitaxial ferrite-garnet films

Precarpathion University named after V.Stefanyk,
57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
*Ivano-Frankivsk State Medical Academy,
2 Galitska Str., Ivano-Frankivsk, 76000, Ukraine

The structural perfection of Bi-substituted ferrite-garnet films which have been grown on a GGG substrate is investigated by the methods of a two-crystal X-ray diffractometry. The model of creation of dislocation walls and block structure is offered. Analyzing widening of the rocking curves for different reflecting orders is determined sizes of region of coherent dispersing and magnitudes of microstrains.

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I.M. Ivanyshyn

Mechanisms of SnTe-GaTe and SnTe-Ga2Te3 solid solution formation, its defects subsystem

Vasyl Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, By the crystallquasichemistry methods the analysis of mechanisms of solid solutions formation of SnTe-GaTe and SnTe-Ga2Te3 quasibinar systems on the basis of Tin Telluride crystal structure is made. It is shown, that at doping of SnTe by GaTe compound both as mechanisms of introduction of Gallium in tetrahedral vacuums (at initial stages with formation of ZnS structure), as substitution by Gallium atoms of metallic sites are realized. In system SnTe-Ga2Te3 the formation of a solid solution occurs by the mechanism of introduction with formation of Ga2Te3 complexes.

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