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Journal Physics and Chemistry of Solid State (Volume 3, Number 3, English version)
2002 Òîì 3 ¹ 3
Abstracts
Photochemical mechanisms of the aril structures protecting
actions and atmosphere resistance of polyamids
(Review)
Ivano-Frankivsk National Technical Oil and Gas University,
15,Karpatska St., Ivano-Frankivsk-19, Ukraine, 76019
E-mail:
ismolensky@ifdtung.if.ua
It is the first time, when by the spector-luminescent, kinetic, themogravimetric and physical-chemical
methods, light protecting properties of the directly synthesized UV-absorbing aril(oxyamid and
benzoltriazol) additions (ai) and their model structures in the process of photooxydation degradation
of aliphatic polyamids in the kinetic area under the impact of long-wave, low intensive ultraviolet
in izotheric oxygen environment were complexly studied. There were also defined the energies of low
E(S1)- singlet and E(T1)- triplet electronically induced states (ai), abnormal stocks shift and specific
energy shift within the initial (M) and polar-resonanse (P) bipolar structures; there were also
suggested and experimentally proved the protecting mechanisms of kinetic super-screening; there was
also developed a method of accelerated WO2-control of polymers photooxidation degradation and light
protection efficiency of the introduced additions (ai) so that technical-ecological monitoring of
polymers ultraviolet atmosphere resistance could be organized.
Full text (on original language)
.pdf (503kb)
Specific Resistance of ð-Type Silicone at the Screening of Doped Centres
by Carrier Current
The measurement of specific resistance of p-types thread like crystals at the temperature range
(4,2-300) Ê. Is shown, at the research samples acceptors screening by holes, that the lead to decrease
their activation energy.
Full text (on original language)
.pdf (280kb)
About temperature dependence of the coefficient
of longitudinal and transverse tensosensibility of metal films
Sumy State University
2 R.-Korsakov st., 40007 Sumy Ukraine
E-mail:
kpf@ssu.sumy.ua
The problem of temperature dependence of the coefficient of longitudinal γl
and transverse
γt tensosensibility has been studied. From analysis of equations for
thermal coefficient
of γl and γt follow that γl and γt
increase with temperature increase in polycrystalline and
strong dispersed metal films. The values has been received.
Full text (on original language)
.pdf (241kb)
Electrically Active Own Defects in Zinc Diphosphid
of Tetragonal Modification
M.P. Dragomanov National Pedagogical University,
9, Pyrogova Str., Kyiv, Ukraine, E-mail:
kudin2001@mail.ru
* Science Centre "Institute of Nuclear research" NAS Ukraine,
47, Nauky Av., Kyiv, Ukraine
On the basis of crystallochemical approaches are obtained baric and temperature dependencies
of concentration of charge-carriers and own defects at two-temperature annealing in vapor a
component of crystals ZnP2 of tetragonal modification. It was found that the inversion of
conductance type in crystals of ZnP2 was caused by single charge defects. Besides, conditions
to form crystals of pre-defined electrical properties were determined.
Full text (on original language)
.pdf (541kb)
Switching of polarization and relaxation phenomena in corona
poled ferroelectric polymers
Department of Physics, Odessa State Academy of Food Technologies,
str. Kanatnaya 112, Odessa, Ukraine, 65039, E-mail:
aeserg@eurocom.od.ua
*Instituto de Fisica de Sao Carlos,
Universidade de Sao Paulo,
CP 369, 13560-970,
Sao Carlos, SP, Brazil, E-mail:
giacomet@ifsc.usp.br
Polarization build-up and switching phenomena in uniaxially and biaxially stretched PVDF have been
studied by a constant current corona poling method. The values of the residual polarization
and the coercive field have been found, as well as some other parameters. It has been proved
that the residual polarization consists of two components, the stable one and the slowly relaxing
one. The stabilizing effect of the space charge has been confirmed.
Full text (on original language)
.pdf (252kb)
The influence of aluminium and germanium subatoms surfactant layers
on electron transport in thin palladium films
Lviv Ivan Franko National University, Physical Department,
Drahomanov St., 50, Lviv, 79005, Ukraine
E-mail:
stasyuk@wups.lviv.ua
The electrical properties of nanometer thick palladium film deposited on polished glass surface have
been investigated. It was shown that subatom Al or Ge layers (mass thickness less than 1nm) hastened
palladium films metallization. The experemental results were explained within the framework of the
classical and the quantium size-effect theories.
Full text (on original language)
.pdf (280kb)
Dependence of ZnO/ZnO contact impedance
on frequency and air humidity
Dep. of Radioelectronics, Dniepropetrovsk National University,
49050 Dniepropetrovsk, Ukraine, E-mail:
alexglot@mail.ru
*Dip. di Scienze e Tecnologie Chimiche,Universita di Roma "Tor Vergata",
Via della Ricerca Scientifica, 00133 Roma, Italy
Relative humidity sensitivity of the impedance of ZnO/ZnO contacts between sintered bodies in the
range 10-2-102 Hz was measured and a theoretical approach for the explanation of the experimental
results is developed. The contact is modelled by a "double Schottky barrier" and a linear resistor
connected in series. The calculated frequency dependence of electrical parameters gives a qualitative
description of the experimental data.
Full text (on original language)
.pdf (311kb)
Atomic defections and phenomenom of self-compensating
PbTe<Te>:In
Vasyl Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine,
*Ivano-Frankivsk State University of the oil and gas,
15, Karpatska Str., Ivano-Frankivsk, 76000, Ukraine
On the basis of thermodynamic and quasichemical approaches the basic mechanisms of defect formation
in Lead Telluride, enriched by Tellurium and doped by Indium are established. The constants of an
equilibrium and enthalpy of defect formation are defined.
Full text (on original language)
.pdf (320kb)
The Investigation of Structural Changes in GGG-monocrystal
Modified by Boron of the Different Energies
Vasyl Stefanyk Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76025, Ukraine
The results of surface layers researches of GGG monocrystal implanted by boron at energies ranges
80-150 keV with dose 1014 ion/cm2are represented. Is shown, that at an
implantation by boron
ions the profile of interplanar distance modification for the given dose monotonically downward
and can be presented as the total of two profiles, one of which is caused by kernel losses, and
second electronic losses.
Full text (on original language)
.pdf (330kb)
Transmission and phase-shifting mask layouts in optical
lithography for formation submicrometer structures VLSI
Prekarpathian University named by Vasyl Stefanyk
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine
Submicrometer optical lithography is possible with conventional projection cameras when the mask
controls the phase of the light at the object plane. The phase shifting mask consists of a normal
transmission mask that has been with a transparent layer patterned to ensure that the optical phases
of nearest apertures are opposite. Thus the phase-shifting mask may be the most desirable device for
enhancing optical lithography resolution in the VLSI era.
Full text (on original language)
.pdf (280kb)
The Properties of Cadmium Telluride Modify Layers
Yriy Fedkovych Chernivtsy National University,
2, Kotsubynskyy St., Chernivtsy, 58012, Ukraine, tel, (03722) 44221, E-mail:
oe-dpt@chnu.cv.ua
Institute of semiconductor physics of NAS Ukraine,
45, Nauky Av., Kyiv
Structure, photoelectric and optic properties of the cadmium telluride is investigated. Is shown,
that annealing of n-CdTe crystal lead to change of microstructure of the samples surface without
influence to main material band parameters.
Full text (on original language)
.pdf (335kb)
Crystaloquasichemical mechanism of solution and oxidation
of wustite and the influence of admixtures on the properties of wustite
Vasyl Stefanyk Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine
In the article the cristaloquasichemical mechanism of dissolution and oxidation, influence of
nonstoichiometry, nature and concentration of defects of wustite, and also, the influence of the
small impurities on its quality has been considered. It was determined that while wustite dissolving
in acids, the Í+ absorption first takes place on cation vacancies with the consequent interaction with
oxygen of wustite, distraction of the crystalline structure of wustite and transition of Fe2+ and Fe3+
into solution. Free cation concentration increases during the oxidation of wustite, and during further
oxidation, the magnetite phase derivates. The influence of admixtures on the nature and concentration
of defects was determined.
Full text (on original language)
.pdf (238kb)
Quasicrystall Alloys as New Perspective Material to Protection Covers
²E.M. Paton Institute of electric welding of NAS Ukraine,
11, Bozhenko Str., Kyiv, 03150, Ukraine
The growth, structure, thermodynamics stability of quasicrystalls, as materials with non-general
quasicrystall structure are analyzing the mechanical, electrical corrosion, tribo-technical properties
of quasicrystall by Ai-Cu-Fe systems and analyzing application of perspective quasicrystall alloys for
prospective covers on rockets-, avia- and car-build and on life too.
Full text (on original language)
.pdf (685kb)
Thermal Conducivity at the Lead Chalkogenides Electronic Crystals
Physical-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
Shevchenko Str., 57, Ivano-Frankivsk, 76000, Ukraine,
E-mail:
liubomyr@pu.if.ua
Concentration dependence of he thermal conductivity efficient on the n-type lead chalkogenides crystals
is investigated with calculation both the carrier scattering and dispersion current of charge.
Full text (on original language)
.pdf (305kb)
Formation of Interphase Boundaries on Surfaces Split
of Silicon Monocrystalline
Ivan Franko Lviv National University, physics department,
50, Dragomanova Str., Lviv, 79005,
E-mail:
galiy@wups.lviv.ua
By both methods Auge-electron and masses-spectrometry is research kinetics of shaping of the interphase
boundaries on surfaces split of monocrystalline silicon (ñ-S³), obtained in high vacuum (in situ), which
the cameras inspected masses-spectrometry contact to atmosphere of residual gases superhigh vacuum
camera. An investigated element-phase structure of surfaces split c-Si (111) in an dependence from
an exposure time in high vacuum and from a doze of an electronic exposure, and also exposure on an air.
The conclusion about presence of thin-film coatings adsorbent on surfaces split in situ is made.
By methods quantitative Auge-electron spectrometry estimate quantitative component structure of the
interphase boundaries and effective thicknesses.
Full text (on original language)
.pdf (478kb)
Physical-chemical conditions of drawing and some
properties of diffuse coverings with participation vanadium
National teachnical University Of Ukraine "KPI",
Peremohy av, 37, Kyiv 03056, Ukraine
In the work phizical-chemical conditions were investigated and analysed thermodynamic regularities
double components of saturation of alloys through gas chlorines a phase vanadium, titanium, lame and
etc. The defined temperature and concentration areas of existence chlorides, carbides, nitrides,
oxides in gas and condensed phases for systems with participation one and two saturate of metals
(vanadium, vanadium-titanium, vanadium-silicon etc.), iron, chlorine, nitrogen, oxygen. The reduced
outcomes of experimental researches of phase structure, some properties and performances of coverings
on stells and rigid alloys at complex saturation from powder mixtures with participation vanadium in
the closed reactionary space.
Full text (on original language)
.pdf (218kb)
Selection of rational structure of initial reagents during
the process of carbonaceous steels
National technical university Ukraine "KPI",
Pr. Peremogy, 36, Kiev, 03056, Ukraine
In work for formation rational structures of initial reagents are established on surfaces carbonaceous
steels coverings on a basis of carbide s niobium.
It is shown, that on all carbonaceous steels on the offered method may be received carbides
coverings on a basis of carbide s niobium which consist of two zones: internal - NbC and external
- Nb2C. To get rid of phase Nb2C that has smaller microhardness and more fragile, it is possible
by increase of the contents carburizer in sating environment, however thus thickness and microhardness
of phase NbC is reduced and its fragility is increased.
Full text (on original language)
.pdf (453kb)
Thin film properties of near-surface microvolumes of metal
formed by friction
The new laminated thin-film structure of a near-surface zone of high strength steel was formed as
a result of friction in medium of a surface-active agent. It is revealed, this structure contained
nanocrystalline and submicrocrystalline layers of the different nature, disjointed by amorphous
interlayers. The depth of each layer did not exceed the size of one grain. Confirms, that the
saturation of surface austenite regions of steel by Carbon during friction is a non-thermal process.
The diffusion takes place at rather low temperatures under influencing of elastic deformation.
Besides the elasto-plastic deformation of metal results in formation of amorphous interlayers.
In the amorphous phase each atom of Iron and Carbon which is not polarized in a local bond with
Oxygen, is ionized as a result of transfer of the electron to an adjacent defect of structure.
Such model of an amorphous phase finds the experimental substantiation. The outcomes of researches
illustrate new capabilities: improved Auger electron spectroscopy analysis as a method for structure
analysis of crystalline and amorphous solids.
Full text (on original language)
.pdf (294kb)
Atomic Defects and Thermal Electric Properties of PbTe-CrTe System
ÔPhysics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
Shevchenko Str., 57, Ivano-Frankivsk, 76000, Ukraine, E-mail:
freik@pu.if.ua
It is proposed crystal-quasichemical formation mechanism of solid solution and analyzed
its defect subsystem.
Full text (on original language)
.pdf (345kb)
Cr-20Ti-10C particulate metal matrix composites
Dnipropetrovs'k National University,
Nauchny Lane, 13 , Dnipropetrovs'k, 49050, Ukraine,
E-mail:
odm@ff.dsu.dp.ua
Metal matrix composites containing Cr-20Ti-10C reinforcement fabricated by infiltrating at 1200 C
to 1280 C for 30 to 60 min have been investigated. Peculiarities of the formation of the interfaces
between
Cr-20Ti-10C solid alloy and Fe-3.5B Fe-3.5B-20Cr, Fe-3.5B-5Ti, Fe-3.5B-10Cu, Cu, Cu-20Ni-20Mn liquid
alloys (wt. pct) have been determined. Copper only weakly wets Cr-20Ti-10C that does not form any new
phases when reacts with liquid copper. The wettability can be improved by adding 20 pct Ni and 20 pct
Mn to copper. The wetting of Cr-20Ti-10C by iron-base melts is much better. Fe-3.5B alloy exhibits
the smallest contact angle. When raising the infiltrating temperature and prolonging the infiltrating
period, wetting properties of Cr-20Ti-10C improve. Difference in wetting behavior of the carbide has
been explained using substance configuration model by G.V. Samsonov.
Full text (on original language)
.pdf (498kb)
Thermoelectric modules Peltye of heightened reliability
The open joint-stock company "Quarts",
str. Golovna, 246,. Chernivtsi, 58032
E-mail:
kvarz@chv.ukrpack.net
High-reliability thermoelectric Peltier modules have been developed. Reliability characteristics
improvement is achieved at the expense Bi-Te-Se-Sb solid solution 28 - 35 mm in diameter and up
to 300 in length characterized up rated mechanical strength being a value of p 80 ÌPà, n
100 ÌPa at Ò = 300 K and by plating ceramic plates with a molybdenum-copper pseudo-alloy. TEM
parameters values do not change on ultimate temperature of 213-333 K effect at electric load in
cyclic (1500 hours) and continuous (2000 hours) modes. TEM developed resistively to mechanical
and climatic factors influence.
Full text (on original language)
.pdf (598kb)
A role of Doping and Residual Impurities in The Formation of Defect Structure
and Electrophysical Properties of Oxygen-Containing Silicon Crystals
Institute of Semiconductor Physics, NAS of Ukraine,
45 Nauka Ave., Kyiv, 03028, Ukraine
*State University of information and communication technology,
Solomyanska str.7, Kyiv 03110, Ukraine
On the basis of examination of experimental results received by us with the help of different
methods (electrophysical, electron paramagnetic resonance, low temperature photoluminescence and
so on) and also those obtained by other authors, an analysis was made of the effect of doping
and residual impurities on the processes of defect formation in oxygen-containing silicon crystals.
Attention is drawn to the fact that at the early stages of oxygen precipitation (annealings at 450oC)
the B doping impurity loses its acceptor properties and interacts with substitutional oxygen thus
forming electrically active donor complexes.
It is also are considered peculiarities of the effect of isovalent impurities carbon and germanium
(or tin) in annealed oxygen-containing crystals on the formation of electrically active thermal
donors of oxygen nature and also on the formation of new properties of silicon material. In particular,
there were found the same and different features in the behaviour of carbon in germanium when they
interact with substitutional oxygen. Model ideas about interimpurity interaction in oxygen-containing
silicon crystals are discused.
Full text (on original language)
.pdf (336kb)
Phases and Structure Heterogeneousness of Fullerite Coating on Titanium
The phase composition, structure and defection of fullerite films Ñ60, condensed on oxidated and
etched surfaces of titanium is investigated by methods of an electronic microscopy. The coexistence
face-centered cubic and hexagonal close-packed of modifications of fullerite Ñ60 is shown. The
dependence of character of dislocation structure of the state of a substrate has been set.
Full text (on original language)
.pdf (429kb)
The Change of Conductivity Type on Cadmium Telluride at the Influence
of the Both Technology Factors and Doped Impurity by Indium
Physics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
57, Shevchenko St., Ivano-Frankivsk, 76000, Ukraine,
E-mail:
prk@pu.if.ua
By method of simulation quasichemical reactions of hyperthermal equilibrium of defects change of
the conductivity type in cadmium telluride under influencing of technology factors and dopant of
indium is describe. The analytical expression for definition of partial pressure a pair of a cadmium
PCd* is obtained, which one responds thermodynamic n-p-junction, for both clean and with an impurity
of indium of the cadmium telluride. Certain conditions material formation of n- and ð-type of
conductivity with given carriers concentration. Conditions of implementation thermodynamic n-p-junction
is explained from temperature and presses by relations of defects concentration.
Full text (on original language)
.pdf (419kb)
Stabilisation δ-Phase by Films Bi2O3 in 300 Ê
Dnipropetrovs'k National University,
Str. Naukova, 13 , Dnipropetrovs'k,
49050, Ukraine
A film α, β, δ and amorphous modifications were gained at fixed values of fractional pressure of
oxygen, current of a magnetron and temperature of a substrate. A thickness of films were determened
by interference method. Structure and preferred orienteation of obtained films determined by the
X-rays analysis in Co Ê radiation on instalation DRON-2.0.
Full text (on original language)
.pdf (227kb)
Surfase magnetic ordering in CdTe:Fe crystals
Yu. Fedkovich Chernivtsi National University,
Chernivtsi
The results of temperature investigations into magnetic susceptibility ( ) of CdTe doped with
iron impurity have been given. One more type of magnetic ordering related to the surbace of doped
crystal has been discovered.
Full text (on original language)
.pdf (202kb)
The Resistance Of The Gas-Thermal Covers In The Erosion Process Of Wear
Ukrainian State University of Food Technologies
68, Vladimirskaya Str., Kiev, 01033, Ukraine
The article demonstrates the results being got in the research for the cavity and erosion process
of wear of the stability of gas-thermal covers ÏÃ-ÑÐ3 on the basis of chromium-nickel alloy in the
acid surrounding. We can state that the wear of the steel 20 and the steel 45 under increased in 1,2
up to 2.
Full text (on original language)
.pdf (345kb)
Eddy Anisotropic Opticothermoelement
Yriy Fedjkovych Chernivtsy National University,
2, Kotsyubynsky Str., Chernivtsy, 580122,
Institute of Thermoelectrisity,
Post, à/b 86, Chernivtsy, 58002
The transverse thermo-EMF of anisotropic opticothermoelement (AOT) has been considered from eddy
thermoelectric currents point of view. Appearance of potential difference in AOT due to eddy
thermoelectric currents presence has been shown.
Full text (on original language)
.pdf (226kb)
The block structure model of epitaxial ferrite-garnet films
Precarpathion University named after V.Stefanyk,
57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
*Ivano-Frankivsk State Medical Academy,
2 Galitska Str., Ivano-Frankivsk, 76000, Ukraine
The structural perfection of Bi-substituted ferrite-garnet films which have been grown on a GGG
substrate is investigated by the methods of a two-crystal X-ray diffractometry. The model of
creation of dislocation walls and block structure is offered. Analyzing widening of the rocking
curves for different reflecting orders is determined sizes of region of coherent dispersing and
magnitudes of microstrains.
Full text (on original language)
.pdf (275kb)
Mechanisms of SnTe-GaTe and SnTe-Ga2Te3
solid solution formation, its defects subsystem
Vasyl Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine,
By the crystallquasichemistry methods the analysis of mechanisms of solid solutions formation
of SnTe-GaTe and SnTe-Ga
2Te
3 quasibinar systems on the basis of Tin Telluride crystal structure
is made.
It is shown, that at doping of SnTe by GaTe compound both as mechanisms of introduction of Gallium
in tetrahedral vacuums (at initial stages with formation of ZnS structure), as substitution by
Gallium atoms of metallic sites are realized. In system SnTe-Ga
2Te
3 the formation of a solid
solution occurs by the mechanism of introduction with formation of Ga2Te3 complexes.
Full text (on original language)
.pdf (367kb)