Photochemical
mechanisms of the aril structures protecting actions and atmosphere resistance of polyamids
(Review) I.M. Smolensky
|
379
|
Specific Resistance of ð-Type Silicone at the Screening of Doped Centres by Carrier Current
Ya.S. Budjzak, À.Î. Druzhynin, ².V. Pavlovskiy, Yu.Ì. Hoverko
|
396
|
About temperature
dependence of the coefficient of longitudinal and transverse tensosensibility of metal films
íà
îñíîâ³
CuGaSe2
S.I. Procenko
|
401
|
Electrically Active
Own Defects in Zinc Diphosphid of Tetragonal Modification
G.V. Zhabyeyev, A.P. Kudin, V.P. Tartachnik
|
404
|
Switching
of polarization and relaxation phenomena in corona poled ferroelectric polymers
S.N. Fedosov, A.E. Sergeeva, J.A. Giacometti, S.G. Polischuk
|
413
|
The infuence
of aluminium and germanium subatoms surfactant layers on electron transport in thin
palladium films
Z.V. Stasyuk, M.M. Kozak, B.R. Penyukh, R.I. Bihun
|
418
|
Dependence of ZnO/ZnO contact impedance on frequency and air humidity
A. Glot, E. Di. Bartolomeo, E. Traversa
|
423
|
Atomic
defections and phenomenom of self-compensating in crystalline PbTe<Te>:In
D.M. Freik, L.R. Pavlyuk, M.Î. Galuschak, G.D. Mateik
|
429
|
The
Investigation of Structural Changes in GGG-monocrystal Modified by Boron of the Different Energies
B.K. Ostafiychuk, I.P. Yaremiy, V.I. Kravets, V.D. Fedoriv, L.S. Yablon
|
437
|
Transmission and phase-shifting mask layouts in optical lithography for formation submicrometer
structures VLSI
S.P. Novosyadliy
|
441
|
The Properties
of Cadmium Telluride Modify Layers
Ì.Â. Äåìè÷,
Ì.V. Demych, Î.S. Lytvyn, V.P. Makhniy, Ì.Ì. Slyotov, Î.V. Stetsj
|
446
|
Crystaloquasichemical mechanism
of solution and oxidation of wustite and the influence of admixtures
on the properties of wustite
À. Bitneva, Ì. Êvych, S. Lisnyak, M. Matkivskyi
|
449
|
Quasicrystall Alloys as New Perspective Material to Protection Covers
L.I. Adeeva, A.L. Borisova
|
454
|
Thermal
Conducivity at the Lead Chalkogenides Electronic Crystals
L.I. Nykyruy
|
466
|
Formation of Interphase Boundaries on Surfaces Split of Silicon Monocrystalline
P.V. Galiy, Ò.Ì. Nenchuk
|
470
|
Physical-chemical conditions of drawing and some properties of diffuse coverings with participation
vanadium
V. Khyzhniak, I. Pogrebova, K. Yancevich
|
482
|
Selection of rational structure of initial
reagents during the process of carbonaceous steels
M.M. Bobina, T.V. Loscutova, V.F. Loscutov
|
486
|
Thin film properties of near-surface
microvolumes of metal formed by friction
O.A. Mishchuk, A.V. Telemko, Yu.G. Gorpinko
|
491
|
Atomic Defects and Thermal Electric Properties of PbTe-CrTe System
D.M. Freik, V.M. Boychuk, L.Y. Mezhylovska, M.A.Lopyanka
|
498
|
Cr-20Ti-10C particulate metal matrix composites
I. Spiridonova, O. Sukhova
|
503
|
Thermoelectric modules Peltye of heightened reliability
À.À. Asheulov, Yu.G. Dobrovolsky, D.V. Kadelnik, À.V. Klepikovsky,
Yu.I. Prochorov, ².S. Romaniyk,
À.G. Shayko-Shaykovsky, V.D. Photiy
|
508
|
A role of Doping and Residual Impurities in The Formation of Defect Structure and Electrophysical Properties
of Oxygen-Containing Silicon Crystals
V.M. Babich, Yu.P. Dotsenko, L.A. Mischenko, M.Ya. Skorokhod
|
515
|
Phases and Structure Heterogeneousness of Fullerite Coating on Titanium
À.². Bazhyn, À.Ì. Trocan, R.Î. Minikaev, S.V. Chertopalov
|
521
|
The Change of Conductivity Type on Cadmium Telluride at the Influence of the Both Technology
Factors and Doped Impurity by Indium
D.Ì. Freik, V.V. Prokopiv, U.Ì. Pysklynetsj, I.M. Lischynsky
|
526
|
Stabilisation δ-Phase by Films Bi2O3 in 300 Ê2O3 ïðè 300 Ê
I.M. Chernenko, K.V. Chasovskyi, V.F. Katkov
|
531
|
Surfase magnetic ordering in CdTe:Fe crystals
R.D. Ivanchuk, D.D. Ivanchuk
|
535
|
The Resistance Of The Gas-Thermal Covers
In The Erosion Process Of Wear
Y.G Sukhenko, A.A. Litvinenko, A.I. Nekoz, V.Y. Sukhenko
|
537
|
Eddy Anisotropic Opticothermoelement
A.A. Ashcheulov, V.G. Okhrem, Ye.A. Okhrem
|
540
|
The block structure model of epitaxial ferrite
-garnet films
Y.T. Solovko, I.P. Yaremiy, V.D. Fedoriv,
I.M. Budzulyak, B.I. Yavorskiy
|
544
|
Mechanisms of SnTe-GaTe and SnTe-Ga2Te3 solid solution formation, its defects subsystem
I.M. Ivanyshyn
|
548
|
Personnel
Freik D.M. - the Academician of International Thermoelectric Academy
|
554
|