Physical-Chemical Peculiarity
of Isovalence Doping of Semiconductors (Review)
N.V. Ganina
|
565
|
The Binding Energy of Rare-Earth Elements
Adsorbed on the (100) Tungsten Crystal Face
S. Stepanovskyy, Z. Stasyuk |
573 |
Structure and properties surface layer of
instrument from steel Р6М5 after magnetically-abrasive treatment
M.M. Bobina, V.S. Maiboroda, N.V. Ulyanenko, A.B. Bobin |
577 |
Properties of Indium
Monoselenide Intercalated With Iodine
Z.D. Kovalyuk, V.B. Boledzyuk and M.M. Pyrl |
581 |
Equilibrium Constants and Entalphy of defect
formation on both telluride and selenide of lead crystals doped by thallium and indium
D.M. Freik, L.P. Pavlyuk, M.I. Beley, G.D. Mateik, Y.M. Yatsura |
586 |
Features of an Edge of an Optical Absorption in Glasses of Systems
ASe-ХSe2-Ga2Se3 (A-Zn,Cd,Hg X-Ge,Sn)ASe-ХSe2-Ga2Se3
(A-Zn,Cd,Hg X-Ge,Sn)
V.V. Bozhko, M.I. Rospopa |
597 |
Examination of structure of nickel - zinc ferrites
obtained by a method of a doping by the basic component
O.Kopayev, B.Ostafiychuk, M.Bakuma, I.Gasyuk |
606 |
Speciality of structure and oxygen non-stehiometry
of solid solution Sm1+xBa2-xCu3Oy
V.O. Drozd, I.L. Baginskiy, S.A. Nedilko, V.S. Melnikov |
612 |
Phase diagram of system Cu2Te-Ga2Te3
B.А. Tataryn, І.D. Оlekseyuk |
622 |
Conditions of Formation and Crystal Structure of Sulfofluorides
Ln3S2F4
(Ln = Y, Nd, Sm, Gd, Dy, Tm) in the Products of Synthesis of FFM LnSF
N.M. Bilyavina, V.F. Zinchenko, N.P. Efryushina, N.A. Chiviryova, V.Ya. Markiv,
V.P. Antonovich, O.V. Mozkova, O.V. Stamikosto |
625 |
Influence of Current Scattering on Thermal-Electricity Properties
of Lead Selenide of the n-type of Conductivity
V.M. Klanichka, L.I. Nykyruy, V.M. Shperun, V.V. Nyzhnykevych, V.F. Pasichnyak |
633 |
Effect of Entrainment of Ions by Electrons and Onset of Electrodiffusion
Potential in n-Ag2S
and p-Cu1-xAgxS (x-0; 0,4)
Sh.M. Alekperova, R.G. Akhmed-Zadeh, G.S. Gadji |
638 |
Double Thermodynamics n-p-Junction on Cadmium Telluride
Crystals, Doped by Chlorine
D.M. Freik, V.V. Prokopiv, U.M. Pysklynetsj, A.M. Dmytriv |
642 |
Metal Alloys for Orthopaedic Stomatology
A.V. Besov |
647 |
T-x Space
Cu-Sn-SnSe-Cu2SnSe3-Cu2Se-Cu
of Systems Cu-Sn-Se
V.M. Моrоz, А.І. Schurоk, D.І. Оlеksyn, М.V. Моrоz |
654 |
Thin-Layer Carbon-Chrome Covers on Steels
L.O. Kapelyukh, P.V. Datsco |
659 |
Atomic Mechanism of Interaction of an
Environment Material with Deformed Metal
O.D. Smiyan |
662 |
Atomic defects and physical-chemical processes on lead
selenide thin films at the pair phase growth
А.D. Freik, М.А. Ruvinskyy |
675 |
The Connection Between the Valence Bands Crystal Splitting and the
Tetragonal Lattice Distortion for
A3IIB2V Compounds
G.P.Chuiko, O.V.Dvornik |
682 |
Doses dependents of relative deformations degree
for La, Ga-substituted ferrit-garnet films
B.K. Ostafiychuk, V.D. Fedoriv, L.S. Yablon, I.P. Yaremiy, B.I. Yavorskiy |
687 |
Atomic defects and physical-chemical properties
of solid solution PbTe-Ga2Te3
L.Y. Mezhylovska, V.М. Boychuk, V.V. Boryk |
693 |
Efficienthy of Thermoelement with
Side Heat Exchange
Ashceulov А.A., Okhrem V.G., Okhrem Ye.A.
|
699 |
The Assaying of Abnormal Rejections of Values of Diffusivities
at Chemical and Heat Treatment of Metals
О.Е. Vashkevych |
704 |
Principle of Formation of Product
Quality Indices in Machine Building
І.V. Кuzio |
706 |
The models of transistors of submicronic
technology of LSI circuits
S.Р. Novosyadlyy |
710 |
X-ray Electronic and X-ray Spectral Research of Electronic Structure
Charging at the Disintegration of BaTiO3 Powder
Y.V. Zaulychnyy |
719 |
Personnel
|
Ostafiychuk B.K. – laureate of State Prize of Ukraine
(.pdf, 219kb)
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725
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