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Journal Physics and Chemistry of Solid State (Volume 3, Number 4, English version)
2002 Volume 3 N 4
Abstracts
Physical-Chemical Peculiarity of Isovalence Doping of
Semiconductors
‘M.V. Lomonosov’ Moskov State Academy of subtle Chemical Technology
This article is a reference review, about basic aspects of state and behavior of isovalence doping (ID)
in semiconductors. Difference at behavior of these doping in germanium, silicone and Ø-V
semiconductors: sign-various derivation from Raul’s law, exist on liquid phase of semiconductor
– ID order regions, correspond to triple chemical compounds III – V – ID; availability ID, as
doping impurities, as the solvent at grown the epitaxial crystals.
The mechanisms of acting of ID and effects of their display is shown: transformations of homogeneity
region of semiconductor compound, redistribution of amphoteric doping to sublattice of III-V compounds,
semiconductor “cleaning” by isovalence doping, change of semiconductor rang of compensation,
decrease of concentration of dislocation and deceleration of solid solution semiconductor-impurity
decomposition at ID present.
Full text (on original language)
.pdf (302kb)
The Binding Energy of Rare-Earth Elements Adsorbed on the (100)
Tungsten Crystal Face
Lviv Ivan Franko National University, Physical Department,
50 Drahomanov St., Lviv, 79005, Ukraine
The contact potential method was used to investigate the binding energy q of Gd, Tb, Dy and Ho
atoms adsorbed by W(100) single crystal face in submonolayer adsorbate concentration n.
The experiment was performed under ultrahigh vacuum conditions (the pressure of active gas
components was less then 5·10-9Pa). Experimental results were explained on
the base ideas about prevail role of exchange interaction in the total binding energy formation.
The exchange interaction characteristics were defined by adsorbed atoms electronic structure
particularities, separately by the degree of adsorbed rare-earth atom 4f-state filling.
It was expected the intermediate valence states of adsorbed atoms could be realized in
the investigated systems.
Full text (on original language)
.pdf (302kb)
Structure and Properties Surface Layer of Instrument From Steel
Ð6Ì5 After Magnetically-Abrasive Treatment
National Technical University of Ukraine “ KPI"
pr. Peremogy, 36, Kiev, 03056, Ukraine
E-mail:
main@iff-kpi.kiev.ua
Inquired into influence parameters of magnetically-abrasive treatment on bilding and properties
surface layer of instrument from steel Ð6Ì5.
Shown, that by basic factors influencing on structure, microhardness strengthened to layer,
surface roughness is speed and time of treatment, fraction of powder, whereof a magnetically-abrasive
instrument forms. Rendered change of microhardness surface layer after magnetically-abrasive treatment
and strengthening instability in time.
Full text (on original language)
.pdf (302kb)
Properties of Indium Monoselenide Intercalated With Iodine
Frantsevych Institute of Materials Science Problems, Chernivtsi Branch,
I.Vilde str., 5, Chernivtsi, 58001, Ukraine,
E-mail:
chimsp@unicom.cv.ua
We have investigated electrical, optical and electrochemical properties of layered single crystals
of InSe intercalated with iodine ions. By the method of micro-probe analysis it is found thet the
ingertion of iodine in near-surface ranges is more intensive thet into the internal bulk of the
investigated samples. It is established thet intercalation of indium selenide with iodine leads to
the shift of the energy location of the exitonic maximum to the high-energy range by abaut of 9 meV
and to the increase of the half-width of the exitonic absorption band by 3 meV. The model of the
formation of spatial chains of the intercalated in layered crystals is confirmed.
Full text (on original language)
.pdf (300kb)
Equilibrium Constants and Entalphy of defect formation on both
telluride and selenide of lead crystals doped by thallium and indium
1Vasyl Stefanyk Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine
2Ivano-Frankivsk National University of Oil and Gas,
3Kolomiya Institute of Menegment of the Earth Resources
Is propose the model of defect subsystem on PbTe and PbSe crystals rich by lead and doped by
acceptor impurity of (Tl), and PbTe also, rich tellurium and doped by donor impurity of (In).
Equilibrium Constants and Entalphy of defect formation is determined. The expression, that define
concentration dependence of carriers current and defect from surplus, as own components (Pb, Te),
and impurities elements (Tl, In) too.
Full text (on original language)
.pdf (428kb)
Features of an Edge of an Optical Absorption in Glasses of Systems
ASe-ÕSe2-Ga2Se3 (A-Zn,Cd,Hg X-Ge,Sn)
Volyn State University,
13,Voli Av.,
Lutsk, 43025, Ukraine, tel. 4-92-21, 4-91-57,
E-mail:
post@univer.lutsk.ua
Explored optical absorption of glass system
ASe-ÕSe2-Ga2Se3 (A-Zn,Cd,Hg X-Ge,Sn)
in the interval of temperatures Ò = 77-400 K in spectral area 1-2,5 åV. For the calculation of
experimental dependencies is used modified Urbach’s rule. The optical breadth of a forbidden region,
parameter of a static disarray, temperature coefficient of a breadth of a forbidden region
b and effective energy of phonons is designed. Conducted correlation
between results of the experiment and the composition of glass.
Full text (on original language)
.pdf (538kb)
Examination of structure of nickel - zinc ferrites obtained by
a method of a doping by the basic component
Vasyl Stefanyk Prekarpathian University,
Ivano-Frankivsk, Ukraine
An X-ray diffraction and Mössbauer spectroscopic study crystalline and magnetic structure of
nickel - zinc ferrites obtained on ceramic technology, improved by usage doping by the basic
component - oxide of zinc. For the first time is shown, that the method doping by the basic
component allows to increase uniformity of texture and by that to increase magnetic parameters of
ferrites. The designed model of magnetic structure of ferrites allows on quantity of an effective
magnetic field to spot concentration of nonmagnetic atoms. The obtained values of chemical detrusions
indicate increase of concentration of cationic vacancies in an octahedral sublattice at a deficit of
ions of zinc in a composition of ferrite.
Full text (on original language)
.pdf (276kb)
Speciality of structure and oxygen non-stehiometry
of solid solution
Sm1+xBa2-xCu3Oy
Taras Shevchenko Kyiv University,
01032, Kyiv, 64, Volodymyrska Str., (044) 221-02-06,
E-mail:
nedilko@nsa.chem.univ.kiev.ua
*Institute of Geo-chemical mineralogy and ore-formation of NAS Ukraine
Kyiv-142, 345, Palladina Str., (044) 444-05-70
The series of solid solutions Ln1+xBa2-xCu3Oy (
Ln=Sm, Eu; õ=0-0,7) has been obtained by sol-gel method. Lattice parameters and oxygen content as
a functions of composition (x) and temperature have been studied by X-ray diffraction analysis and
iodometric titration, respectively. The character of oxygen content dependence on substitution
ratio x was found to be non-monotone for Sm1+xBa2 xCu3Oy solid solutions within 0<õ<0,3.
Investigation of lattice parameters and oxygen content dependence on temperature has shown
the increase of oxygen sublattice termal stability increases with x growth.
Full text (on original language)
.pdf (560kb)
Phase Diagram of System Cu2Te-Ga2Te3
‘Lesi Ukrainky’ Volynj State University, dept. general and unorganic chemistry
13, Voli Av., Lutsk, 43025, Ukraine,
tel. (03322) 4-10-07, 4-99-72,
E-mail:
tatarin@lab.univer.lutsk.ua
Phase equilibria in the Cu2Te-Ga2Te3 system were investigated using
differential thermal analysis, metallography and X-ray diffraction. The existence of the ternary
phase CuGaTe2 was confirmed. Considerable solid solution range of initial components and
the ternary phase were determined. Structure, lattice parameters and their change with composition
of the solid solutions were determined.
Full text (on original language)
.pdf (287kb)
Conditions of Formation and Crystal Structure of Sulfofluorides
Ln3S2F4 (Ln = Y, Nd, Sm, Gd, Dy, Tm)
in the Products of Synthesis of FFM LnSF
1O.V. Bogatsky Physico-Chemical Institute of NAS of Ukraine,
86,
Lyustdorfska doroga, Odesa, 65080, tel.0482-61-82-25,
E-mail:
physchem@paco.net
2Taras Shevchenko National University, 60, Volodymyrska Str., Kyiv, 01003,
E-mail:
belmar@mail.kiev.ua/a>
3Central Desian Office "Arsensal",
8, Moskovska Str., Kyiv, 01010, tel 044-254-59-08,
E-mail:borisgor@i.com.ua
In process of the solid-phase synthesis of the RE sulfofluorides in some products by X-ray phase
analysis formation of additional phases has been revealed; their contents varies from admixtures
(in the case of Y, Nd, Gd, Dy, Sm compounds) up to a prevailing phase (Tm compound). At synthesis
in salt melt NaCl-KCl the contents of such phases essentially grows. The belonging of crystal
structure of the specified phases to a type of Yb3S2F4 – mixed
valent compound of Yb (II, III) is established. The correlation between ability to formation of
similar phases and propensity to different valence states for rare earth metals is revealed.
X-ray diffraction spectrum is calculated and structure of Tm3S2F4 is simulated. The chemical
analysis has confirmed an essential deviation from stoicheometry of the composition of products
synthesized in salt melts. The process of vacuum evaporation is confirmed by X-ray phase analysis
and chemical analysis of the refuses and coatings to be incongruent. The coatings consists mainly
from fluorides such as LnF3 and significant part of amorphous phase, which promotes
improvement of their optical properties.
Full text (on original language)
.pdf (333kb)
Attachment 1
.pdf (78kb)
Influence of Current Scattering on Thermal-Electricity Properties
of Lead Selenide of the n-type of Conductivity
Physial-Chemical Institute at the ‘Vasyl Stefanyk’ Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine
*Ivano-Frankivsk National Technical University of Oil and Gas,
Karpatska Str., 15, Ivano-Frankivsk, 76000, Ukraine
Concentration dependence of the thermal-e.m.f. a, conductivity
s, thermal conductivity k,
thermal-electricity power a2s, thermal-electriciry quality Z
òà dimensionless factor of thermal-electriciry quality ZÒ of lead selenide of the n-type of
conductivity are research with account of the dominate carrier scattering: screen Coulomb potential
of vacancies, short-range potential of vacancies, deformation potential both of acoustic and optic
phonons, polar potential of optic phonons, and inter-electron collisions.
Full text (on original language)
.pdf (594kb)
Effect of Entrainment of Ions by Electrons and Onset of Electrodiffusion
Potential in n-Ag2S and p-Cu1-xAgxS (x-0; 0,4)
Institute of Physics, National Academy of Sciences of Azerbaijan
H.Javid av.33, 370143, Baku,
E-mail:
physic@physics.ab.az
First, in the course of temperature heating of binary and triple polycrystal silver sulphide
(n-Ag2S, p-CuAgS and Cu0,6Ag0,4S-alloy) it was found that for lack
of temperature gradient and no other external influence there are the potential difference of
the order of some millivolts in the samples and its inversion.
The onset of electrodiffusion potential (EDP) is observed with temperature rise of samples from 300 K
at specific range.
The onset the EDP and thereof temperature dependence similar to EDP, stipulated an entrainment
of ions by electrons (or alternatively). As the true ionic mobility exponential depends upon the
temperature, the temperature dependence effective mobility has unusual nature. The course of
the EDP with temperature rise follows from effective mobility course.
For this crystals the necessary condition for the entrainment phenomenon is the existence of
metastable substructure between high-and low temperature modifications, plays a role a perturbing
factor in its place of external influence. Within a narrow temperature interval the conductivity of
samples increases by a factor of 104-105. Just in this temperature
range there is the onset the EDP in studded crystals.
Key words: the onset, the electrodiffusion, potential, entrainment.
Full text (on original language)
.pdf (301kb)
Double Thermodynamics n-p-Junction on Cadmium
Telluride Crystals, Doped by Chlorine
Physical-Chemical Institute at the Vasyl Stefanyk Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
By methods of modeling quasichemical reactions of defect formation on cadmium telluride crystals,
doped by chlorine at their high-temperature annealing on pair of components (Cd, Te) the formation
of double thermodynamics n-p-junction is describe. Analytics expression for calculated partial
pressure of cadmium pair PCd*, which correspond to thermodynamics n-p-junction is receive.
The formation of two junction is explain by formation of antistructural defect TeCd.
Equilibrium constants of (ClTeVCd)
complexes formation and antistructural defects TeCd were define. It is determine the
condition of formation material of the n- and ð-types of conductivity with known carriers
concentration.
Full text (on original language)
.pdf (2679kb)
Metal Alloys for Orthopaedic Stomatology
National Technical University «Kyiv Polytechnical Institute»
Peremogy Av., 39, 02056, Kyiv, Ukraine, ph. (044) 441-15-46
The basic metal alloys, which are applied in Orthopaedic stomatology is research. The analysis of
alloys is carried out which are released on Ukraine. The opportunity of their application in tooth
covering with use of a method plasma grown is shown.
Full text (on original language)
.pdf (321kb)
T-x Space Cu-Sn-SnSe-Cu2SnSe3-Cu2Se-Cu
of Systems Cu-Sn-Se
Ukrainian State University of Water Economy ànd Nature Management,
11, Soborna St, Rivnå, 33000, Ukraine,
E-mail:
Solidus@rstu.rv.ua
The relation ship of the structure of P-T-x space of complex inorganic systems with the instability
of semiconductor phases parameters is considered. The experimentally constructed T-x space of
Cu-Sn-Se system is described in part Cu-Sn-SnSe-Cu2SnSe3-Cu2Se-Cu
of the concentration triangle.
Key words: system, diagram, semiconductors, parameters, stability metals.
Full text (on original language)
.pdf (272kb)
ÒThin-Layer Carbon-Chrome Covers on Steels
1Ivano-Frankivsk National Technical University of Oil and Gas,
Karpatska Str., 15, Ivano-Frankivsk, 76000, Ukraine
2‘Vasyl Stefanyk’ Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine
On the bases of experimental results the possible formation mechanism of carbon-chrome covers on the
steel surface is shown. Is present their analytic description.
Full text (on original language)
.pdf (240kb)
Atomic Mechanism of Interaction of an Environment Material with Deformed Metal
E.O. Paton Electric Welding Institute of the NAS of Ukraine
11 Bozhenko Str, Kyiv, 03150, Ukraine, tel/fax: (380 44) 227-23-66
The mechanism and conditions of atom-by-atom splitting of molecules of a deformation environment
material into individual components migrating deep into metal are suggested. The process occurs
at the "environment-deformed solid" interface due to a new physical phenomenon (atom-by-atom
splitting of environment material molecules by dislocation – ASED) discovered. The latter is
confirmed by direct experimental measurements made by local mass spectrometry using a laser probe
and by Auger spectrometry on a number of steels, metals and alloys deformed in environments of a
different aggregate state and with a different chemical composition.
Full text (on original language)
.pdf (493kb)
Atomic defects and physical-chemical processes on
lead selenide thin films at the pair phase growth
Physial-Chemical Institute at the ‘Vasyl Stefanyk’ Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine,
E-mail:
fcss@pu.if.ua
On the crystal-chemical, quasichemical on thermodynamic methods, and from analyses of physical
processes the mechanism of influence of atomic defects on electrical properties of thin films,
growth from vapour phase is describe.
Full text (on original language)
.pdf (489kb)
The Connection Between the Valence Bands
Crystal Splitting and the Tetragonal Lattice Distortion for
A3IIB2V Compounds
Kherson State Technical University,
Department of Cybernetics, Laboratory of solid state theory,
24, Berislavske shosse, 73008, Kherson, Ukraine, phone: +380-0552-326922,
E-mail:
chuiko@public.kherson.ua
The functional dependence of crystal field parameter d on the lattice
tetragonal distortion has been
investigated within limits of generalized Kildal theory for polymorphous of
A3IIB2V compounds with center of symmetry.
It is shown, that the dependence of band structure on such distortion is both, direct and indirect,
for these materials simultaneously. The influence of the sign and value of parameter d
on the valence bands crystal splitting is discussed for A3IIB2V
compounds. The theoretical calculations are illustrated for the case of cadmium arsenide
– Cd3As2 – with inverted band structure
(eg<0).
Full text (on original language)
.pdf (281kb)
Doses dependents of relative deformations degree
for La, Ga-substituted ferrit-garnet films
Vasyl Stefanyk Prekarpathian University
The investigations structure of implanted layers of the Ga, La-substituted ferrit-garnet films
implanted by F+ ions with energy 90 keV and doses 1·1013-2·1014cm-2.
The relative deformation modification on implanted layer thickness at different implantation doses.
The mechanism of defect structure formation are proposed. Dependents between implantation doses and
relative deformation of crystal structure are obtained.
Full text (on original language)
.pdf (332kb)
Atomic defects and physical-chemical properties of
solid solution
PbTe-Ga2Te3
Physial-Chemical Institute at the ‘Vasyl Stefanyk’ Prekarpathian University
Shevchenko str., 57, Ivano-Frankivsk, 76000, Ukraine
Crystal-Quasichemical reactions of own atomic defects formation on lead telluride with solid solution
formation PbTe-Ga2Te3 is proposed.
Full text (on original language)
.pdf (256kb)
Efficienthy of Thermoelement with Side Heat Exchange
Institute of Thermal-Electricity,
P/b 86, Main-Post-Office, Chernivtsy,
58002,
Chernivtsy National University,
2, Kotsubynsky Str., Chernivtsy, 58012
A theory of load thermoelement with side heat exchange has been developed. The temperature
distribution and thermoelement efficienthy has been calculated, obtained results have been
analised.
Full text (on original language)
.pdf (262kb)
The Assaying of Abnormal Rejections of
Values of Diffusivities at Chemical and Heat Treatment of Metals
Prekarpathian university named after V.Stefanik,
57 Shevchenko St, Ivano-Frankivsk, 76000, Ukraine
In given article the behaviour of diffusivities analytically is investigated at chemical and heat
treatment. The abnormal rejection from the low of the Arrhenius is considered, deduced a number of
parities from positions of different approaches which describe sample experimental dependences at
diffusive saturation of metals.
Full text (on original language)
.pdf (235kb)
Principle of Formation of
Product Quality Indices in Machine Building
National University “Lvivska Politechnica”,
12, S. Banderi Str.,79064, Lviv, Ukraine
The basis on classification, grouping and determination on the fields of application of product
quality in machine building the principle of formation of a structure is discussed.
Full text (on original language)
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Ìîäåë³ òðàíçèñòîð³â ñóáì³êðîííî¿ òåõíîëî㳿 âåëèêèõ
³íòåãðàëüíèõ ñõåì
Prekarpathian university named after V.Stefanik,
57 Shevchenko St, Ivano-Frankivsk, 76000, Ukraine
Óäîñêîíàëåíî ìîäåë³ òðàíçèñòîð³â äëÿ òåõíîëîã³÷íîãî ÑÀÏÐ ñóáì³êðîííî¿ òåõíîëî㳿 ç âðàõóâàííÿì
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ñõåìàõ.
Êëþ÷îâ³ ñëîâà: ìîäåëü, åï³òàêñ³éíà ñòðóêòóðà, ìîäóëÿö³ÿ, êîíöåíòðàö³éíèé ïðîô³ëü,
áàãàòîçàðÿäíà ³ìïëàíòàö³ÿ, ãàììà-ôàêòîð.
Full text (on original language)
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X-ray-electron and X-ray-spectrum investigation of
electronic structure changes BaTiO3 powder dispergation
Institute of Material Science,
Kyiv, Ukraine
XPS and XES investigation of electronic structure of BaTiO3 powders with specific surfaces
2 m2/g and 40 m2/g reveals essential narrowing of energetic distribution
Tisd- and O2p- valence states of ultradispersive powders in comparison with grained powders.
This is the result of confluence of energetic states of orbitals, which is not used in chemical
bounds of surface atoms, number of which is commensurable with number inside nanoparticle and
relaxation processes was induced by substantial Laplas pressure and other factors. Defined
increase of electron bounding energy Ba4d3/2,5/2- and Ba5s-electrons shows due to
complete transmission of valence electrons from Barium to Oxygen and due to full vanishing
of intersection O2p- and Ba6s- orbits after bounds breakdown.
Full text (on original language)
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