The Feature of Defect Formation
Mechanisms on AIVBVI Compounds Semiconductor Films
М.О. Galushchak
|
609
|
Physical-Mathematical Sciences
|
Optical Properties of Thin-Film
Metal-Dielectric Nanocomposites
A.D. Zamkovets, S.M. Kachan, A.N. Ponyavina |
627 |
Features of a Structure of a
Zone of Conductivity in High-temperature Сeramics of System 1:2:3
alloying K and Zn
V. Kasiyanenko, V. Martyniuk |
632 |
Simulation of Atomic Hydrogen
Interaction with Vacancy Defect on Ge(100) Surface. SSEM
O.Y. Anan'yina, A.S. Yanovs'ky, A.P. Kotlyarov |
638 |
Cd1-XZnxTe
Crystals Photoelectric Properties, Grown by High Ar Pressure
A. Savitskjy, Ye. Nykonyuk, O. Parfenyuk, M. Ilashchuk, P. Fochuk, P.Feichuk |
643 |
Structural Features,
Kinetics of Crystallization and Physical Properties of
GdFe2-films
V.I. Prysyazhnyuk, O.G. Mykolaychuk |
648 |
Space Correlations
Effects in the Processes Controled by Atom Capture
Ya.P. Saliy, R.Ya. Saliy/i> |
653 |
The Influence of Hydrogen on Electrical
Properties of Contact Sn-p-InSe
S.I. Drapak, V.М. Kaminsky, Z.D. Kovalyuk, V.V. Netyaga, V.B. Orletskyy |
656 |
Influence of Heat Treatment
and Electronic Irradiation on Element Composition of Films MgO
S. Vashkevych, М. Berkeschuk, О. Poplavskiy |
659 |
Dispersion of Refractive Index
of Dielectrics as a Basis for Reconstruction of Fundamental
Absorption Spectrum
B. Andriyevsky, A. Patryn |
663 |
Surface and Interface
Investigation of Structures Created on Cd1-XZnxTe
and Cd1-XMnxTe by Laser Melting
O.V. Galochkin, S.G. Dremluzhenko, Y.D. Zakharuk, A.I. Rarenko, E.V. Rybak,
V.M. Strebezhev |
669 |
Absorption Edge of Cadmium Arsenide
V.V.Ivchenko, A.N.Sergeev, V.S.Elnik, and N.M.Chuiko |
673 |
Production Mono- and Two-Layers
Films on the Base of YBa2Cu3O7-X
Using Laser Plasma Ablation
A.D. Pogrebnjak, О.P. Kul'ment'eva, A. Marcu, A. Lebed |
681 |
Optical Properties of the Surface
Modified Layers CdTe<O>
M.M. Slyotov, Ya.N. Barasyuk, M.V. Demych, A.G. Buzhnyak, V.G. Tomin |
686 |
Chemical Sciences
|
|
Luminescent Properties оf
СdI2 Single Crystals, Doped with СuІ2
O.N. Yurchenko, I.D. Olekseyuk, S.S. Novosad |
689 |
Chemical Interaction of GaSb
and GaAs with the Etching Compositions of the
HNO3-HBr(HCl)-H2O Systems
О.S. Chernyuk, Z.F. Tomashik, V.I. Grytsiv, V.M. Tomashik, V.M. Kashpor |
693 |
Nonstoichiometry and own point
defects of tin telluride
D.M. Freik, І.M. Ivanyshyn, L.Y. Mezhylovska |
700 |
Chemical Etching of the InAs
and GaAs Single Crystals in the Solutions of the H2O2-unorganic
Acid Systems
Z.F. Tomashik, E.M. Lukiyanchuk, V.M. Tomashik |
707 |
The Frequencies Spectrums by
Quantum-Chemical Calculations of GenSm
Clusters (n = 2, m = 3, 5-7; n = 4, m = 3)
R.M. Holomb |
711 |
Crystalquasichemical
Investigation of Influence of Admixtures on Reactionary
Ability of Hematite
T. Tatarchuk, G. Boyko, S. Lisnyak, D. Protskiy, N. Orynchuk |
716 |
Technical Sciences
|
The Effect of Strain on the
Impurity Conductivity of Silicon Whiskers in the Range of
Metal-Insulator Transition
A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, I.V. Pavlovsky
|
720
|
Analysis of the Light Radiation
Spectra Emitted by Electrical Discharges in Insulation Oil
T. Boczar, P. Fracz, D. Zmarzly |
729 |
Registor of Capacity of the
Parametrical Capacitor with System PLL
V.V. Brailovsky, P.P. Vatamanjuk, P.M. Shpatar |
737 |
To a Problem on Sіmulatіon
of a Physіco-Chemіcal Sіtuatіon in Pores of Cathode Coatіngs on
Steel
A.І. Kostrjіtskіy, E.N. Naumova |
743 |
Peculiaryties of Obtaining
of ZnS-polycrystals by means of Self-propagating High-temperature
Synthesis
S.V. Kozytckyy, V.P. Pysarskyy, D.D. Polishchuk |
749 |
Physical-Chemical Particulates
of Fe-Electrodes Fabrication and tem using for Ni-Fe-Batteries
L.M. Zaychenko, A.I. Seredyuk, V.D. Fotyj |
754 |
Discuss
|
New Problem of Physics and
Chemistry of Solid State: Mesoscopichno Disordered Medium
A.M. Nicolenko |
758 |
Personnel
|
Tomchuk Petro Mykhaylovych(.pdf, 119kb)
|
776
|
Procenko Ivan Yukhymovych(.pdf, 119kb)
|
778
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Galushchak Marjan Oleksiyovych(.pdf, 119kb)
|
780
|