PCSS, V.5, N2, 2004

Abstracts

P.O. Kondratenko, Yu.M. Lopatkin

Kinetics оf Anthracene Photooxide Dissociation іn Polyethylene

National Aviation University, E-mail:pkondrat@unicyb.kiev.ua
Sumy State University Ukraine, E-mail:yu_lopatkin@mail.ru

On the basis of experimental and theoretical researches of photodissociation of peroxide in the polymeric layers it is shown, that at peroxide exposes a thermal instability, thus a speed of dissociation of molecule of peroxide with formation of anthracene molecule is multiplied with the rise of temperature, that it is caused by the small energy of tie between by constituents of molecule of peroxide (by the oxygen molecule and anthracene). For acceleration of experimental researches it is suggested to conduct research of process of dissociation of the unstable halving peroxide) with the use of method of the continuous heating of standard with the constant speed. The offered method permitted to find energy and frequency to dissociation (e= 1,20±0,1 eV, lgk₀= 14,8±1,7). For explanation some of big size quantity of frequency factor a supposition is entered about the noticeable role of compensative effect, character for the thermodynamics processes with participation of the molecular systems.

A. Grigonis, Ž. Rutkūnienė, H. Manikowski¹, M. Kulik²

Changes on the Silicon Surface Radiating it by Halocarbon and/or Hydrogen Plasma

Kaunas University of Techology, Kaunas, Lithuania
¹Poznan University of Technology, Poznan, Poland,
²Maria Curie-Sklodwska University, Liublin, Poland

It is shown, that polymeric formation based on carbon-halogen is not dominant on surface when silicon etched in CF₂Cl₂ plasma. The A-Si_xC_1-x:H:F film formed on the silicon surface when it is treated in CF₄ + H₂ plasma. Concentration of impurities and predominating of bonds depend on condition of irradiation and etching duration. Concentration of free bonds in the structure increased with increasing of power of irradiation. Ellipsometry measurements of irradiated structures showed that four-layer model can be taken for the analysis.
Key words: silicon, surface, plasma.

M. Aceves, O. Malik, V. Grimalsky

Application of Silicon Rich Oxide Films in New Optoelectronic Devices

National Institute for Astrophysics. Optics, and Electronics (INAOE), Electronics Department,
P.O. 51 and 216, Puebla, Pue., Mexico, Tel/Fax. +52 (222) 247-05-17;
E-mail:maceves@ieee.org amalik@inaoep.mx vgrim@inaoep.mx

The optoelectronic properties of new metal-insulator-silicon (MIS) optical sensors are described. Silicon rich oxide layer is used as an insulator in this sensor. We are discussing the case when applied voltage bias is not enough for significant thorough leakage current through the silicon rich oxide layer. At that, the sensor presents a MIS capacitor, photoelectric properties of which are investigated and simulated numerically. It is shown that at stepped voltage bias the sensor operates in two quasi-equilibrium modes. A transition between these modes presents a practical interest. In the first operating mode, photo generated minority carriers are stored in the potential well at silicon rich oxide/silicon interface. The readout of stored charge occurs at stepped changing the applied voltage bias. At that, the inversion charge is injected into the silicon substrate and a displacement current peak is obtained. The amplitude of this peak exceeds drastically the value of photocurrent at the storing stage. An internal amplification coefficient of current exceeds the value of 10⁴. Thus, the investigated sensors have an internal amplification of the electrical signal and they can be used for a weak optical signal registration. Numerical model has been put forward, where a presence of inversion and depletion regions in semiconductor, and also a leakage through the silicon rich oxide are taken into account. Simulations have been done for experimental input parameters and demonstrate a good agreement with the experimental results.
Keywords: optical sensor, metal-insulator-semiconductor capacitor, transient, internal gain.

L.A. Karachevtseva, O.O. Lytvynenko, M.I. Karas’, V.F. Onishchenko

The Angle Dependence of Photoconductivity in Two-Dimension Photon Structures of the Macroporous Silicon

V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
45, Nauki Av., Kyiv, 03028, Ukraine, E-mail:lakar@isp.kiev.ua

Effects of the enhancement of photoconductivity in two-dimensional macroporous silicon structures were investigated. Its dependency on incidance angle of the electromagnetic illumination was revealed. Intrinsic photoconductivity signal is enhanced 10² times relatively monocrystalline silicon. Obtained results were explaned by the surface electromagnetic wave formation.

O.M. Bordun, Z.V. Stasjuk, I.Yo. Kukharsky

The Influence of Oxygen Vacancy in Dispersion Properties of Thin Ві₂О₃ Films

Lviv Ivan Franko National University,
50, Drahomanov Str., Lviv, 79005, Ukraine, E-mail:bordun@wups.lviv.ua

Dispersion of light is studied in thin Ві₂О₃ films with monoclinic structure. At transition from Ві₂О₃ films, which anneal in air to Ві₂О₃ films, which anneal in vacuum, observed the greater value of refractive index and density packed of films was established. Parameters of the one-oscillator approximation are determined, dispersion energy, ionicity and coordination number are calculated.

A. Vlasov, V. Pysarevsky, O. Storchun, О. Bonchyk¹, A. Barcz², Z. Swiatek³

Solid Phase Doping оf CdHgTe Epitaxial Layers with Sb

Lviv National University,
1 Universitetska Str., Lviv, 79000, Ukraine,
¹Institute for Applied Problems of Mechanics and Mathematics of NASU,
3-b Naukova Str., Lviv, 79061, Ukraine
²Institute of Physics of Polish Academy of Sciences,
32/46 Al. Lotnikow Str., Warsaw, 02-668, Poland
³Institute of Metallurgy and Materials Science, Polish Academy of Sciences,
25 Reymonta Str., Cracow,30-059, Poland

Results of controlled doping of Cd_xHg_1-xTe epitaxial layers with Sb are presented. The investigated layers have been obtained by evaporation-condensation-diffusion (ECD) method in the process of the isothermal growth. The CdTe single crystal substrates (111) were used as a diffusant source for the solid phase doping. Two types of substrates, uniformly doped up to NSb ~ 10¹⁷cm^-3 in the process of synthesis and undoped ones with ion implanted surface layer (Е = 100 KeV, D = 8•10¹⁴см^-2), have been used in the experiments. A profile of Sb distribution was determined by Mass-spectrometry of secondary ions, and profiles of the main component composition of the Cd_xHg_1-xTe solid solutions along thickness of grown layers grown were studied by the X-ray microanalyser. Determination of the type of conductivity type and of the free carrier concentration were carried out by the use of galvanomagnetic measurements according to the standard procedure. The comparative analysis of the obtained results was accomplished. It was shown that the Sb solid phase source ensures high efficiency of the Cd_xHg_1-xTe layers doping during the vapour phase epitaxy by the ECD method.

V.A. Gnatyuk¹, V.V. Borshch², M.G. Kuzmenko², O.S. Gorodnychenko³, S.O. Yuryev⁴

Dispersion of Optical Characteristics of Anisotropic CdP₂ Single Crystals

¹Research Institute of Electronics, Shizuoka University
3-5-1 Johoku, Hamamatsu, 432-8011, Japan, E-mail:gnatyuk@mailcity.com
²Poltava Branch of Kyiv High Military Control and Communication Institute,
36, Zinkivska Str., Poltava, 36009, Ukraine
³Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
45, Nauki Av., Kyiv, 03028, Ukraine
⁴Lviv Polytechnic National University, Departament of Physics,
12, Bandery Str., Lviv, 79013, Ukraine

The refined results of the specified dispersion of refractive indexes, birefringence, optical activity of anisotropic b-CdP₂ single crystals and the components of both the gyration tensor G₃₃ and the optical activity tensor g₁₂₃ in a wide spectral band of polarized light under normal conditions are presented. The influence of temperature and radiation intensity of neodymium and ruby lasers on these characteristics of CdP₂ single crystals is studied and analyzed. Key words: CdP₂ crystals, dispersion, refractive index, optical activity, plane of polarization, gyration tensor.

R.D. Ivanchuk

The Photoelectric Properties Annealed CdTe Samples Doped with Iron

Yuriy Fedkovych Chernivtsi National University,
2, Kotsubynskyy Str., Chernivtsi, 58012, Ukraine

The results of experimental investigations into photoconductivity and volt-ampere characteristics of annealed (Т = 1174 К, P_Cd = 2,24•10⁵Pa) CdTe samples doped with iron have been given. The phenomenon of residual conductivity related to iron impurity containing clusters, as well as the phenomenon of polarized memory when measuring volt-ampere characteristics have been discovered.

V.P. Makhniy, V.V. Mel’nyk, M.M. Slyotov, B.M. Sobishchanskyi, O.V. Stets

Study of Mechanisms of the Defects Emerges in ZnSe<Sn> Layers

Chernivtsi National University named after Yu. Fed’kovych,
2, Kotsyubynsky Str., Chernivtsi, 58012, Ukraine, E-mail:oe-dpt@chnu.edu.ua

The electrical and luminescent characteristic of the layers, obtained by diffusion of tin in undoped and doped by Al and Te crystals zinc selenide is studied. It is shown that tin enters on scheme replacement mainly in cation sublattice and forms the small donor centers. The observed electrophysical and luminescent characteristics of objects of studies on base offered models of forming the defects are explained.

T.A. Revenyuk, S.N. Fedosov, J.A. Giacometti*, A.E. Sergeeva

Processes of Electrical Relaxation in Corona Poled Doped Polystyrene

Department of Physics, Odesa National Academy of Food Technologies,
112, Kanatna Str., 65039 Odesa, Ukraine,
tel. 380 482 291180, E-mail:fedosov@optima.com.ua
* Instituto de Física de São Carlos, Universidade de São Paulo,
CP 369, 13560-970, São Carlos, Brazil, tel: 55 16 2715365

Kinetics of the electret potential and thermally stimulated currents have been studied in polystyrene films doped with the optically active molecules of DR-1 and poled in corona discharge. It has been found that apart from accumulation of the charge at the bombarded by corona ions surface, a partial injection of the charge in the bulk takes place with the followed drift of the carriers in the field created by surface and volume charges. Application of three modifications of the thermally stimulated method allowed one to separate relaxation processes related to dipolar polarization, volume and surface charges. It has been shown that the most thermally stable is the surface charge. Advantages of the corona poling method for application in the field of non-linear optical polymers are analyzed.

B.K. Ostafiychuk, I.M. Budzulyak, I.M. Gasyuk, R.V. Ilnytskyy

X-Ray Photography Emission Bars Ti from Nanocrystall Titania Intercalated by the Lithium Ions

Precarpathion University named after V.Stefanyk,
57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
E-mail:valeriy@pu.if.ua, тел: 8-0342 59-60-75

On the basis of X-ray photography emission spectrums analysis of titanium from TiO₂ nanodispersive powders tendency is retraced in reconstruction of cathode material electronic structure of lithium power sources in the process of technological modification and intercalation by the Li⁺ ions. The redistribution of electronic density in a titan sphere and additional spd-hybridization of electronic levels is exposed in the process of lithium intercalation. Destruction of basic rutile-anatase modification is confirmed at the high degrees of Li⁺ “guest” loading.

M.M. Klym, S.I. Mudry, I.I. Shtablavyi

Structure of Cu-Mn Alloys

Ivan Franko Lviv National University,
8a, Kyryla and Mefodiya Str., Lviv, 79005, Ukraine E-mail:shtihor@rambler.ru

Structure of Cu-Mn liquid alloys within concentration range 5-70 at % Mn has been studied by means of X-ray diffraction method. Structure factors and pair correlation functions are analyzed. It was found that structural state of Cu-enriched melts is characterized by self-associated atomic distribution. Random atomic distribution occurs in liquid alloys, containing 5;10 and 36.5 at % of Mn.

T. Govorun, A. Stepanenko, A. Chornous

Physical Properties of Coppers Films with the Thin Overlayer from Nickel

Sumy State University,
Street. R.-Korsakova, 2. Sumy, 40007, Ukraine,
E-mail:info@aph.sumdu.edu.ua

УIn work it is experimentally investigated size effect in temperature coefficient of resistance (ТCR) films Cu with the thin overlayer from Ni, it is lead calculation of parameters of electrocarry (the mean-free path of an electrical current, the reflectivity coefficient of the external surfaces, the reflection and transmission coefficients of the grain boundary). It is shown, that at drawing a covering size ТCR falls due to change of conditions of dispersion on internal and external boundaries.

D.M. Freik, A.M.Yatsura

Defects Formation in Clear and Doped by Bismuth PbSe Films

Prycarpathian University named Vasyl Stefanyk, Department of physics and chemistry of solid state
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine

Suggested the mechanisms of defects formation PbSe and PbSe:Bi films grew in open vacuum on (111) BaF₂ chips. It is demonstrated if formation of internodal lead and selenium vakancy dominate in clear films than in doped films dominate bismuth in cationic (Bi_Pb) and anionic (Bi_Se) subarrays.

S.I. Drapak, Z.D. Kovalyuk

The Electrical Properties Peculiarities оf the Isotype p-GaSe-p-InSe Heterojunction

Frantsevich Institute of Material Sciences Problems,
National Academy of Sciences of the Ukraine, Chernivtsi Department,
5, I. Vilde Str., Chernivtsi, 58001, Ukraine
tel: 8(+03722) 2-00-50, Е-mail:chimsp@unicom.cv.ua

The first studies of isotype heterojunction p-GaSe-p-InSe are presented. Analysis of experimental results have made possible to determine the main transport mechanisms governed rectifying properties of the structure; to explain how can be the open cirquit voltage higher than barrier height and other peculiarities of the heterostructure.

B.K. Ostafiychuk, P.I. Melnyk, V.D. Fedoriv, I.P. Yaremiy, V.O. Kotsyubynsky, V.I. Mandzyuk, L.S. Kaikan

Structure and Phase Changes in Fe-Ti System under the Influence of Thermocycling

Precarpathion University named after V. Stefanyk,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine,
Е-mail:sofia@pu.if.ua, tel: +(03422) 59-60-75

Fe-Ti composite material structure forming in the thermocycling conditions at sintering temperature 850-950^oC with phase transitions are studied. Diffusion process intensity has decreased with the increasing of thermocycle number because polimorphous transformation are missing in the Fe grains with the Ti substance <2%. This process intermetalic phases formations at the Fe and Ti grains verges are stimulated.

D.M. Freik, B.S. Dzundza, І.V. Kalytchuk, V.М. Klanichka

Mobility of Charge Carriers and Scattering Mechanisms in the Lead Sulfide Films

Department of physics and chemistry of solid state at the ‘Vasyl Stefanyk’ Prekarpathian University
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:freik@pu.if.ua/a>

V.M. Klanichka, L.I. Nykyruy, A.V. Lysak, S.A. Galiguzova

Fermi Energy for Lead Chalkogenides on Kane and Dimmock Energy Band Models and Charge Carriers Degeneration

Physical-Chemical Institute at the ‘Vasyl Stefanyk’ Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:liubomyr@pu.if.ua/a>

I.M. Budzulyak, I.A. Klymyshyn, B.K. Ostafiychuk, Y.T. Solovko

Atomic Defects Dynamics in Laser Pulsed (YSmCaBi)₃(FeGeSi)₅O₁₂-Films

Precarpathion University named after V. Stefanyk,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine E-mail:valeriy@pu.if.ua, phone: +(03422) 59-60-75

Defect subsystem dynamics of crystal lattice of laser pulsed Bi-substituted ferrite-garnet films is investigated. Conditions of atomic defects (interstitial atom and vacancies) laser annealing are determined on the base of optic and X-ray diffractometry data and some impurity atoms are identified (Bi³⁺, Pb²⁺, Pb⁴⁺, Fe²⁺ and Fe⁴⁺).

B.L. Melnichuk, B.R. Penyukh, Z.V. Stasyuk

Electrical Properties of Thin Manganese Films

Lviv Ivan Franko National University, Department of Electronics,
50, Drahomanov Str., Lviv, 79005, Ukraine; E-mail:stasyuk@wups.lviv.ua

The electrical conductivity and absolute thermoelectric power of manganese thin films have been investigated under ultrahigh vacuum conditions. The experimental results were interpreted in the framework of the model of surface scattering influence on electron transport in films. The charge transport parameters in thin films were estimated.

S.A. Nedilko, A.G. Dzyazko

A Heterovalent Isomorphic Substitution the Yttrium Gallium Garnet

Department of Chemistry National Taras Shevchenko University of Kyiv,
64, Volodymyrs'ka Str., Kyiv, 01033, Ukraine,
(044) 239-33-06, E-mail:nedilko@red-gw.univ.kiev.ua

The solid solutions Y_3-xCaxGa_5-xTi_xO₁₂ have bin synthesized by the method of component co-precipitation followed with a calcinations of the batches. The composition limits for the solution existence were determined by a X-ray powder diffraction. The cations distribution within the garnet structure sublattices was evaluated using IR spectroscopy and mathematic modeling. It was shown that under substitution of gallium by titanium ions the latter ones appear to be located preferably in the tetrahedral sublattice.

L. Mezhylovska, А. Dmytriv, P. Zukowski*

Crystal-quasichemical Atomic Defects Cd_1-xZn_xTe Solid Solutions with Oxygen

‘Vasyl Stefanyk’ Prekarpathian University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:freik@pu.if.ua
*Lyublin Technical University,
20-618 Lyublin, Poland E-mail:mario@elektron.pol.lublin.pl

By crystal-quasichemical method the defect subsystem of CCd_1-xZn_xTe solid solutions with non-control oxygen impurity is research.

H. Sirenko, N. Lutsyshin

The Influence Linear Perfluorpolyethers on Avtocatalitical Disintegration of Perchloric Ammonia and Research of Their Mix on Sensitivity to Impact and Friction

‘Vasyl Stefanyk’ Prekarpathian University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:nli@optima.com.ua

The mechanism of disintegration perchloric ammonia at presence perfluorpolyethers in with the help termographic and thermogravymetres of the analyses is investigated, as a result of which is investigated, that perchloric ammonia at presence perfluorpolyethers displaces temperature of disintegration perchloric ammonia in the party of maximum temperatures, which permits to use them with maximum technological temperatures. The influence aerosyl and organoaerosyl in on compatibility perchloric ammonia with perfluorpolyethers and plastic lubricant oils on its basis to explosion is investigated with impact and friction.

D.М. Freik, V.V. Prokopiv, U.М. Pysklynetsj

Models of Atomic Defects and Thermodynamics n-р-Junction in Cadmium Tellurides Crystals Alloyed by Gold CdTe<Cd>:Au

Physics-Chemical Institute at the Vasyl Stefanyk Prekarpathian University
57, Shevchenko St., Ivano-Frankivsk, 76000, Ukraine, E-mail:freik@pu.if.ua

An analysis of defect subsystem of the CdTe<Cd>:Au crystals, annealing at high and chilled to the room temperature is lead. The equilibrium concentrations of charge carriers, as neutral, one- and double-charge vacancies, interlattice atoms of the cadmium and tellurium and admixture centers in dependence on the technological factors are definite. The terms of realization of thermodynamics n-р-junction and dominant atomic defects are set.

T.G. Kalinichenko, L.F. Sukhodub

Investigation оf Golden Surface, that Modified by Surface Active Plant Origin Steroid Glycosides, using Ellipsometry and Scanning Electron Microscopy

Institute of Applied Phisycs NAS of Ukraine,
58, Petropavlovskaya Str., Sumy, 40030, Ukraine
tel.: (0542) 33-30-89, E-mail:t_kalinichenko@yahoo.com

Optical and topographic properties of pure and modified by surface active (SA) substances surface of gold are investigated by ellipsometry and scanning electron microscopy (SEM). Experimentally shown that concentration of SA steroid glycosides (SG) are really higher on the top of solution than in middle; SGs are able to form micelle-like aggregates. The model of SG molecules adsorption on rough golden surface verify by mathematic modeling using ellipsometric and SEM dates.

O.I. Konоpelnik, O.I. Aksimentyeva, M.Ya. Grytsiv

Optical Properties of Polyparaphenylene Electrochemically Synthesized in the Thin Layer

Ivan Franko Lviv National University,
50, Dragomanov Str., 79005, Lviv, Ukraine, E-mail:konopelnik@physics.wups.lviv.ua/a>

V.M. Boychuk, V.V. Boryk

Calculation of the Atomic Defect Concentration of n-PbTe-ІnTe Solid Solutions by Crystal-Quasichemical Equations

‘Vasyl Stefanyk’ Prekarpathian University,
57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail: fcss@pu.іf.ua

V.O. Ukrainets, G.A. Ilchuk, N.A. Ukrainets, R.Yu. Petrus’, S.B. Kharambura

Properties of Me(In, Sn, Pb)-p-CdTe Surface-Barier Structures in Forward Bias Region

НNational University ”Lvivs’ka Politekhnika”, Departament of Physics,
12, Bandera Str., Lviv, 79013, Ukraine
tel. 8(0322) 398-775, E-mail: gilchuk@polynet.lviv.ua

An atypical character of physical properties (differential capacitance, differential conductance, internal photoemission) of surface-barrier structures Ме(In,Sn,Pb)-p-CdTe fabricated on the relatively high resistance p-CdTe (p = (0,3-6,0) Ohm·m, p_c-v=(0,3-40)·10²⁰m^-3, Т = 300 К) is revealed in the forward bias region. It is shown, that these effects are interrelated and caused by the interfacial structure layer localized between the metal and hole cadmium telluride.

Ya.I. Lepikh

Processing оf а Рiezoceramic Sound-Conductor Surface оf Elements оn Surface Acoustic Waves

Odesa I.I. Mechnikov National University,
2, Dvoryanska Str., Odesa, 65026, Ukraine,
tel. (+38) 0482 - 23-34-61 fax (+38) 0482 - 23-34-61 , E-maіl: ndl_lepіkh@maіl.ru

A.I. Minailov

Controlling of Parameters of Low-dimension Structures, Oobtained by the Method of Pulse Cooling of Saturated Solution-Melt

Kherson State Technical University,
Berislavske Shosse 24, Kherson, 73008, Ukraine,
tel. (0552) 51 64 68, E-mail:andymin@selena.net.ua

Andrzej Sumorek and Wiktor Pietrzyk

The Influence of Corona Wind on the Convective Drying Course

Lublin University of Technology, Department of Computer and Electrical Engineering
ul. Nadbystrzycka 38A, 20-618 Lublin, Poland,
tel./fax: (+48 81) 53 81 299, E-mail: sumek@elektron.pol.lublin.pl

А.V. Іvashchuk

Influence оf Metallization Technology оn Parameters оf Ohmic Contacts to GaAs

Open Joint-Stock Company “Scientific and production firm ”Saturn”,
Kyiv, tel.: (044)478-0681, E-mail:ivaschuk@i.com.ua

B.K. Ostafiychuk, I.M. Budzulyak, I.I. Grigorchak, I.F. Myroniuk, R.P. Lisovskyy, R.I. Merena

Temperature Dependence of Operating Characteristics of Supercapacitors

Precarpathion University named after V. Stefanyk,
57, Shevchenko Str., Ivano-Frankivsk, 76025, Ukraine

Researches of temperature dependence of specific characteristics of electrochemical capacitors (EC), the capacity of which is provided by a double electric layer (DEL), are explored. It is set, that EC suitable for the use without the special changes of their operating characteristics in a temperature range -30 – +50^oС.
Keywords: electrochemical capacitors; double electric layer.

S.P. Novosyadlyy, R.I. Zapuchlyak, P.I. Melnyk

Schemotechnique, Structure and Physic-technological Features of Powerful Output Cascade of Digital VLSI

Vasyl Stefanyk Prekarpathian University, Physical Faculty,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine

In this article for the first time the compatible technology of Bi-C-MOS and D-MOS structures engineering with a use of silicon epitaxial structures of the n--n---p- type has been described. It allows to create structures of large-scale integrated circuits of multifunctional purpose.

I.V. Maslov

Optical Checking Quality System of the Welded Connections

Ivano-Frankivsk National Technical University of Oil and Gas,
15, Karpatska Str., Ivano-Frankivsk, 76019, Ukraine,
tel: 4-80-00, E-mail:dim@il.if.ua