PCSS, V.6, N1, 2005


B.M. Ruvinsky1, M.A. Ruvinsky2

Phonon Attenuation of Hypersound in Rectangular Quantum Wire

1Ivano-Frankivsk National Technical University of Oil and Gas,
15, Carpatska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:ruvinsky@il.if.ua
2Vasyl Stefanyk' Precarpathian National University,
57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine

The phonon mechanism of hypersonic attenuation of Landau-Rumer type in a rectangular quantum wire is studied. The dispersion curves and the attenuation coefficients for the confined acoustic phonons of the lowest hybrid width modes in a free-standing GaAs wire with different cross-sectional dimensions have been calculated. The comparison of the phonon mechanism of hypersonic attenuation with the electron mechanism is carried out. As shown, the phonon mechanism of hypersonic attenuation is essential at sufficiently high temperatures and the electron mechanism in the low-temperature range.

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D.M. Freik, M.A. Lopyanka, A.K. Shkolnyi, R.I. Nykyruy

Nanosystems of IV-VI compounds, precipitate from gas-dynamical stream of steam

Physical-Chemical Institute at the Vasiliy Stefanyk Precarpathian National University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:freik@pu.if.ua

Expressions are resulted for the thermodynamics parameters of gas-dynamical stream of steam at the linear temperature gradient along a cylinder channel. Dependence of critical cross, coefficient and resulting condensation velocity and degree of satiety of tin telluride steam from technological factors is expected and their influence on the features of growth of condensate is explored.

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I.F. Myronyuk1, V.I. Mandzyuk1, T.V. Gergel2

Dimensions Effects in Fumed Silica Nanoparticles

1V. Stefanyk Precarpathion National University,
Shevchenko Str., 57, Ivano-Frankivsk, 76000, Ukraine E-mail:mandzyuk_vova@rambler.ru, : +(03422) 59-60-75
2Ivano-Frankivsk State Medical Academy,
Halitska Str., 2, Ivano - Frankivsk, 76000, Ukraine

The investigation of fumed silica by means the infrared Fourier spectroscopy method allowed find out that the length of siloxane bond increase in Si O Si chains with the decreasing of nanoparticles average diameter, thus bonds feel the most lengthening in surface globule interlayer. The globule swelling related to considerable Laplace pressure within small particles. There is the band in SiO2 spectra with the maximum absorption at 978-964 sm-1, which belong to dissymmetric atom oscillations of siloxane bond of surface globule interlayer.
The decreasing of concentration of hydroxyl groups and absorbed water concentration in small particles reduction of concentration is conditioned by reduction of number of surface silicon atoms in re-calculation per unit of area.

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L.Yu. Ostrovskaya1, A.P. Dementiev2, P.Milani3, I.N. Kholmanov3, L.A. Matveeva4

Variation of the Wettability of Cluster-Assembled TiO2 Films under the Action of Annealing and Ultraviolet Irradiation

1V. M. Bakul Institute for Superhard Materials, N.A.S. of Ukraine,
2, Avtozavodskaya Street, Kiev 04074, Ukraine, E-mail:ostrovska@ism.kiev.ua
2IRTM, RRC "Kurchatov Institute", Kurchatov square, Moscow 123182, Russia
3University of Milan, 16, via Celoria, Milan, 20133, Italy, E-mail:Paolo.Milani@mi.infn.it
4Institute of Semiconductor Physics, N.A.S. of Ukraine,
42, Nauki Prospekt, Kiev 03028,Ukraine, E-mail:matveeva@isp.kiev.ua

We have studied the mechanism of the wettability variation of a special class of nanostructured coatings: cluster-assembled TiO2 thin films (of 200 nm to 1 m in thickness) under the action of high-temperature annealing and ultraviolet irradiation. Our results show that annealing of TiO2 films in air (800oC, 3 h) significantly decreases the contact angle from 83o even to zero because of the changes in structure (anatase-to-rutile phase transformation), surface chemistry (change of state Ti4+> Ti3+) and surface morphology (recrystallization). Irreversible structure and morphology changes prevent the recovering of contact angles to their initial values with time. The same change in the TiO2 contact angle due to the ultraviolet irradiation (wave-length is 365 nm, 7 h) is attributed to a radical change in the surface chemistry only. As opposite to the annealed coatings, the UV-irradiated ones restore their hydrophobic properties after being held in the dark for about 2 weeks. It was shown that the wettability of nanostructured films can be efficiently controlled using the different surface treatments, such as annealing and ultraviolet irradiation.
Keywords: nanoscale materials, wettability control, annealing, ultraviolet irradiation.

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V.B. Zalesski1, T.R. Leonova1, O.V. Goncharova2, I.A. Victorov3, V.F. Gremenok3, E.P. Zaretskaya3

Investigation of Electrical and Optical Characteristics of Zinc Oxide Thin Films Formed by Reactive Magnetron Sputtering

1Institute of Electronics, National Academy of Sciences of Belarus,
22 Logoisky tract.,220090 Minsk, Belarus; E-mail:Zalesski@inel.bas-net.by
2Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus,
70 F. Skorina Ave., 220072 Minsk, Belarus; E-mail:Olga.Goncharova@imaph.bas-net.by 3Institute of Solid-State and Semiconductor Physics, National Academy of Sciences of Belarus,
17 P.Brovki Str., 220072 Minsk; E-mail:gremenok@ifttp.bas-net.by

In this article we present the results of development of non-epitaxially grown i-ZnO- or/and n-ZnO-films for preparation of high-transparent electrical contact and buffer layers of CuInSe2- and Cu(In,Ga)Se2-based solar cells. Non-doped zinc oxide films were prepared on glass substrates by the reactive magnetron sputtering of nominally-pure Zn-targets in argon-oxygen atmosphere. Electrical, structural and optical properties of a series of ZnO-films containing various amounts of oxygen vacancies have been studied with reference to the optimal technological parameters put forward for ZnO-films with definite magnitude of electrical resistivity r. UV--visible absorption spectra, X-ray diffraction, and Hall effect measurements were carried out. Results show that ZnO-films prepared by this method are preferentially oriented with the c-axis perpendicular to the substrate surface. The results of Hall effect measurements show that n-type conducting ZnO-films with electron concentrations as high as 1.4×1020cm-3 were obtained by this method. The electrical resistivity parameter of elaborated ZnO-films was found to be technologically controlled in the region r=3×10-41×107 Omcm as well as their high transmission was detected to be the result of the structure. Formation of densely-packed high-oriented crystalline ZnO-films with definite r at appropriate growth conditions is observed. Possible growth mechanism responsible for the formation of i-ZnO- or/and n-ZnO-films with definite r is discussed.

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P.H. Lytovchenko1, V.S. nzhara4, V.Ya. pylat2, .V. Petrenk1, V.P. rtachnyk1, V.M. Shapar3

Radiation Recombination on Irradiation Gallium Phosphide

1Research Center of Institute of Nuclear Researches NAS of Ukraine,
2M.P. Drahomanov National Pedagogical University,
3Institute of Semiconductor Physics NAS of Ukraine,
4Institute of Physics NAS of Ukraine,

The GaP LED radiative recombination spectra were investigated. The nature of separate lines is found out. It is shown, that Co60 g-quanta and 1 MeV electrons irradiation introduces non-radiating levels of radiative defects, which causes glow degradation. It is revealed, that the exciton radiated emission which caused by bounded to atom of nitrogen exciton annihilation, shows the raised sensitivity to the radiation treatment compared with others spectral lines.

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M.M. Slyotov, Ya.N. Barasyuk, M.V. Demych, A.G. Buzhnyak, V.G. Tomin

Optical Properties of the Surface Modified Layers CdTe<O>

Yriy Fedkovych Chernivtsy National University,
2, Korsubynskyy St., Chernivtsy, 58012, Ukraine, E-mail:oe-dpt@chnu.cv.ua

Optical propertys of the surface layers of cadmium telluride is investigated. It is shown that the annealing of the crystals lead to the emerging of the modified layers. The geometrical and the physical properties of the layers determine by the isovalent impurity of the oxygen.

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B.K. Ostafiychuk, V.D. Fedoriv, V.O. Kotsyubynsky, V.V. Moklyak

Mossbauer study of mixed magnetic and electric interaction in epitaxial films Y3Fe5O12

Precarpathion University named after V. Stefanyk,
57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:mvvmcv@mail.ru, phone: +(03422) 59-60-75

Conversion electron Mossbauer spectroscopy is applied to study thin magnetic microstructure of epitaxial iron-yttrium ferrite-garnets films superficial layers. The presence of two magnetic nonequivalent tetracoordinated Fe3+ position and Fe2+ ions in paramagnetic state was experimental established. Space orientation of iron sublattice magnetic moment and electric fields matrix element on the Fe57 nuclei was investigated by diagonalization of the nuclear Hamiltonian mixed magnetic and electric interaction.

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O.A. Kulinich, M.A. Glauberman

Investigation of oxidation silicons subsurface layers

Training,Scientific-Investigation and Production Center at Mechnikov Odessa National University
4 Marshala Govorova Str., Odessa 65063, Ukraine, E-mail:eltech@elaninet.com

In this work results investigation of oxidation silicons subsurface layers are showing. This layers consist of strong breaking silicon which have some dielectric properties and silicon rystal layers with dislocations nets and finished within the limits of layers of silicon. Thickness of strong breaking silicon layers are proportional of oxide silicon thickness used thermal layers. Main admixture of the silicons subsurface layers is oxygen which have passivity and electric properties and have an influence on charge state of this layers.

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O. Kondrat, N. Popovich, M. Dovgoshej

The charge transition phenomena in heterostructures crystalline Si Bi amorphous film Ge33As12Se55

Uzhgorod National University,
46, Pidhirna str., Uzhgorod, 88000, Ukraine l.: (03122) 3 23 18; E-mail:moshenec@rambler.ru

eterostructures Ge33As12Se55 Si(n) with modified by bismuth atoms transitive layer were obtained by discrete thermal evaporation method. It is described formation and investigation methods for this heterostructures. It was ascertained the mechanism of charge transmission in this heterostructures. It is illustrated that the barrier for holes in the boundary is absent. The energy diagram of heterostructure was built. It is analyze the absence of soft hole, which cause by the electrons transfer through the interknot when negative voltage is applied. The dependence heterostructures electrophysical properties from Ge33As12Se55 film thickness was investigated. It is shown that in heterostructures with modified transitive layer is necessity of use the Ge33As12Se55 film with thickness more then 0.4 mkm. It is ascertained that at modification transitive layer take place the conversion from harsh to smooth transition, what cause by diffusion bismuth atoms to surface layers.

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A.S. Bajtsar1, O.G. Mykolajchuk1, B.P. Yatsyshyn2

Influence of Thermodynamic Conditions During Condensation on Properties and Crystalization Process of the Thin Amorphous Films Hf-(Fe, Co, Ni)-Ge

1Ivan Franko Lviv National University, Physic of metals Department,
8Cyryla & Mephodyja Str., Lviv,79005, Ukraine, tel.29-64-306
2Lviv Commercial Academy, department of the chemistry and physics,
79008, Ukraine,10, Tuhan-Baranovsky str., E-mail: ecofizbo@lac.lviv.ua

The purpose of this work was study the processes crystallization amorphous thin films f- (Fe, Co, Ni) Ge by observing the changes of their physical properties and structure. The object of investigations were alloys with metal contents 25-34 at. %, which have propensity to amorphization. The thin films were obtained by a method of coordinated evaporation of alloys in vacuum 2 10-3 with speed of condensation from 4 up to 30 nm/s on ceramic substrates.The comparison of the experimental results and the final values of temperatures of crystallization showed discrepancy for condensates obtained at small thermodynamic satiety,with respect to a model, based on a definition of transition as change in viscosity of a material. Significant deviations from the law that describe the relation between the temperature of crystallization and formation enthalpy ( cr = 7,5D) by Midema model were found.

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O. Nakonechna, I. Plyushchay, G. Yeremenko, M. Zakharenko

The Peculiarities of the Electronic Structure of NiPdP Based Amorphous Alloys

Department of Physics, Taras Shevchenko Nanional Kyiv University,
64, Volodymyrska Str., 01033, Kyiv, Ukraine, Phone: +380-44-266-2335

The density of the electronic states for the Ni-Pd-P-based amorphous alloys has been calculated using an extension of the s-d band model in the coherent potential approximation in the case of a topological disordering. The calculated density of states is shown to be in a good agreement with the data of optical experiments. The conductivity properties are shown to be caused by the involving of the Andersons localized electronic states into the kinetic process.
Keywords: amorphous alloys, electronic structure.

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A.M. Androsyuk, S.I. Stepanovsky, Z.V. Stasyuk

Electron-Adsorption Properties of Nd Films Adsorbed on (100) Face of Tungsten

Ivan Franko Lviv National University
50, Dragomanova Str., Lviv, 79005, Ukraine

An adsorption of Nd on face W (100) was studied by the contact potential difference method. The dependences of the work function of the Nd films was measured at different coverages and substrate temperatures. It was investigated that Nd films decrease work function value of W(100) face. The substrate temperature exerts essential effect on film work function, which is ascribed to a surface reconstruction.

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D.M. Freik1, O.L. Sokolov1, G.D. Mateyk2, B.S. Dzundza1, V.F. Pasichniak1

Electrical Properties of the PbSnSe Epitaxial Films From Both the Petritz and the Diffuse Scattering Models

1Department of physics and solid chemistry,
Precarpathian national university of name of Vasiliy Stefanyk
201, Galitska Str., Ivano-Frankivsk, 76000, Ukraine, E-mal:freik@pu.f.ua
2Ivano-Frankivsk National Technical University of Oil and Gas,
15, Karpatska Str., Ivano-Frankivsk, 76019, Ukraine

The dependence specific electroconductivity (s), Hall coefficient (RH) and Hall mobility (mH) n- and p - type Pb0,91Sn0,09Se films as functions of thickness at the 77 and 300 K are obtain. Under condition of implementation the two-layer Petritz model is determined of electrical parameters of near-surface layers of the thin films. It is analysis of size dependence of the mobility from the diffuse scattering.

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A.M. Yatsura

Real structure of lead selenide epitaxial films

Precarpathian national university of name of Vasiliy Stefanyk
201, Galitska Str., Ivano-Frankivsk, 76000, Ukraine, -mail:freik@pu.f.ua

bSe, , - .

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N.V. Ganina, V.A. Shmugurov, V.I. Fistulj

Quantum-Chemical Determination of Enthalpy of Monovacancy Formation in IIIBV Semiconductor Compounds

M.V. Lomonosov Moskow State Academy of Thin Chemical Technology,
SSU (Russia, Moldova Branch)

By method of molecular orbitals the value of enthalpies and entropies of formation of monovacancies and enthalpies of formation of twin defects by Schottky in IIIBV semiconductor compounds with structure of blende is calculate. In calculations the strain of a crystal lattice around of flaw is taken into account.

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P.Y. Stakhira1, Ya.I. Vertsimaha2, O.I. Aksimentyeva3, B.R. Cizh4, V.V. Cherpak1

Hybrid solar cells based on dispersed InSe- polyaniline composites

1Lviv Polytechnics National University,
12 Bandery-St., 79013, Lviv, Ukraine, E-mail:stakhira@polynet.lviv.ua
2Institute of Physics of NASU,
46 Prospect Nauki, 03022, Kiev, Ukraine
3Ivan Franko Lviv National University,
8 Kyryla-Mefodia, 79005, Lviv, Ukraine
4The Kazimiez Wielki Academy of Bydgoszcz,
Chodkiewicza Str., 30, Bydgoszcz, 85-064, Poland

The hybrid solar cells based on dispersed InSe- polyaniline composites has been fabricated. We show that the current voltage curves in the dark state could be modelled by using the Shockley equation. The photocurrent density dependence on light intensity has been found to be a nonlinear. An analysis of index n gives a value of 1.98 related to nonlinear recombination. The spectrum of photosensitivity of composite is corresponding to bulk InSe spectrum of photosensitivity. Proposed solar cells are characterized by higher open circuit voltage in comparison with other hybrid cells based on conjugated polymers and inorganic semiconductors.
Keywords: dispersed InSe, polyaniline, composites, solar cells.

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Z.F. Tomashik, .B. Stratiychuk, V.M. Tomashik

Interaction of Undoped and Doped CdTe With the Solutions Of The H2O2HBrTartaric Acid System

V.Ye. Laskaryov Institute for Semiconductor Physics of National Academy of Sciences of Ukraine,
Kyiv, Ukraine, Nauki ave., 41; E-mail:s_irina@isp.kiev.ua

Mechanism and kinetics of physico-chemical interaction of undoped and doped by Ga, Ge, Sb, Sn As + Cl impurities single crystal ingots of CdTe with the etching solutions of the H2O2HBrtartaric acid system in reproducible hydrodynamics conditions using a device of chemical dynamic polishing has been investigated for the first time. The isolines of equal etching rates (Gibbs diagrams) were built and concentration regions of polishing, selective and unpolishing solutions were determined. It is shown that doping has an influence both the rate and the nature of cadmium telluride chemical dissolution.

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O.V. Kuchma1, N.N. Ilchenko2, Yu.L. Zub1, A.A. Chuiko1

The Factors Influencing on Conformation Behavior of Grafted on a Silica Surface Molecules of Calix[4]arene-Crow-6

1Institute of Surface Chemistry NAS of Ukraine,
General Naumov str., 17, 03164 Kyiv, Ukraine, E-mail:lisichbibi@list.ru,
2Institute of cellular biology and genetic engineering NAS of Ukraine,
Zabolotnogo str., 148, 03143 Kyiv, Ukraine

Optimization the geometry of grafted on a silica surface alkoxysilyl derivatives of calix[4]arene-crown-6 selective sorbents of an isotope 137Cs - was carried out by quantum-chemical semiempirical methods 1 and 3.The factors influencing on conformation mobility and, accordingly, on sorption ability of grafted on a matrix surface of calixcrown derivatives were investigated. The analysis of calculations has allowed to establish that such factors are the nature and geometry of substitutes and also distance between superficial silanol groups to which the macrocyclic molecule was fasted.

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O.V. Slobodyan, M.V. Shaplavskiy

Electrophysics Properties f Films 17H35COONa

Bukovinian State Medical Academy,
2, Theatre sq., Chernivtsy, 58000, tel. (0372) 2-45-44, E-mail:oksana.v.s@mail.ru

The influence of variable electrical field on properties of stearate natrium films in a system metal-film-metal is investigated. In a large interval of amplitude values of variable-current the non-linearity of fissile components of a volt-ampere characteristic is watched, and the active resistance decreases with growth of amplitude value of an electric current. It is rotined, that the change of fissile component of electric resistance is conditioned by compression of hinge-derivate connections in hydrocarbon circuits owing to pulling of inverse charged metallically laminas among themselves. Last is confirmed by similar changes of fissile electric resistance at mechanical compression of laminas.
At increase of electrical field amplitude in a system the metal-film-metal appears inverse voltage breakdown. The critical value of electrical field amplitude essentially depends on a degree irregularities of metal laminas.

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L.Y. Mezhylovska, V.M. Boychuk, O.V. Tkachyk

Point Defects and Formation Mechanisms of PbTe-Sb2Te3 Solid Solutions

Physical-Chemical Institute at the Vasiliy Stefanyk Precarpathian National University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:prk@pu.if.ua

The quasichemical reactions of PbTe-Sb2Te3 solid solution formation after mechanisms there are substitutions and taking roots of furnace in the octahedron and tetrahedron cavities of the dense packing of tellurium atoms of the lead crystalline structure are offerd. The cases of saving of stoichiometry are considered in alloying claster after a metal and chalkohen. On the basis of analysis of results of experiment and crystal-quasichemical reactions conclusions are done about the dominant mechanisms of formation of solid solutions.

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O.I. Bodak2, V.A. Romaka1, Yu.V. Stadnyk2, L.P. Romaka2, Yu.K. Gorelenko2, V.F. Chekurin1

Conductivity transition of metal-insulator induced by change in Zr1-ScNiSn solid solution composition

1Pidstryhach Institute for Applied Problems of Mechanics and Mathematics Academi of Sciences of Ukraine,
Naukova Str. 3-b, 79053, Lviv, Ukraine; ph. (0322)-63-71-11; E-mail:romaka@lviv.net
2Ivan Franko Lviv National University,
Kyryl nd Mephodiy Str. 6, 79005 Lviv; ph. (032)-296-45-03; -mail:stadnyk_yuriy@franko.lviv.ua

Magnetic susceptibility oscillations around the transition of conductivity metal-insulator during the change in Zr1-ScNiSn solid solution composition were experimentally observed first. This transition we account for Anderson transition. These observed oscillations indicate the existence of Coulomb gap in impurity band of semiconductor during the change of doping level and compensation. A scheme of band structure transition for Zr1-ScNiSn solid solution resulted by doping of acceptor impurities was proposed.

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Yu. Borisov, A. Borisova, L. Adeeva, A. Tunik, M. Panko

Thermal sprayed coatings containing quasicrystalline phase, them properties and application

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P. Tarkowski

Problems Connected with Tribological Tests of Metals Modified with thin Coatings

Technical University of Lublin, Mechanical Faculty,
36 Nadbystrzycka Str., 20-618 Lublin, Poland; E-mail:p.tarkowski@pollub.pl

Chosen problems concerning the processes of friction and wear of metal surfaces improved with thin layers have been presented in the paper. The scheme of the pin-on-disc test bench used testing thin layers as well as the results of preliminary tests have been presented.
Keywords: tribology, thin layers, ion implantation, pin-on-disc.

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V.F. Bashev1, O.E. Beletskaya1, N.A. Korovina2, N.. Kutseva1, .. Lysenko1

Influence of Rapid Cooling Methods by High-Energy Sources on a Phase Structure and Properties of Titanium Alloys

1Dniepropetrovsk National University,
ul. Nauchnaya 13, Dnepropetrovsk 49050 Ukraine,
2Dneprodzerdzginskii State Technical University,
ul. Dneprostroevskaya 2, Dneprodzerdzginsk 51918 Ukraine

The results of investigation of a phase structure and properties of serial titanium (a+b) alloys B3-1, B-8, B-16, treated by high-energy sources (HES) of electron-beam and laser radiation are presented. The cooling rates at laser processing were theoretically estimated and the thermal regimes of cooling in various melting zones were established. It was shown the products of martensitic transformation and titanium nitrides (Ti, Me)N (mainly) and (Ti, Me)2N forming in the upper horizons of laser-melted zone promote essential increase of microhardness in titanium alloys treated by HES.
Keywords: electron-beam processing, laser processing, titanium alloys, cooling rate, quenching.

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Z.D. valyuk, .. Politanska

Creating and Investigation of p-n-junction on p-InSe by Pulse Laser Irradiation

Chernivtsi Department of the Institute of Materials Science Problems, the National Academy of Sciences of Ukraine,
5, Iryna Vilde St., 58001 Chernivtsi, Ukraine, E-mail:chimsp@unicom.cv.ua

P-n-junctions are obtained by high-power laser pulse irradiation of surface p-InSe<Cd> duration 2 ms. The temperature dependences of current-voltage characteristics and relative quantum efficiencies are discussed; current transport mechanisms of the prepared diodes are interpreted.

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G.S. Khrypunov

Thin Film Solar Cells NaCl/ITO/CdS/CdTe/Cu/Au

National Technical University "Kharkov polytechnical institute"
Frunze St. 21, 61002, Kharkov, Ukraine, E-mail: khrip@ukr.net

The complex researches of connected layers influence on the efficiency and initial characteristics of the NaCl/ITO/CdS/CdTe/Cu/Au thin film solar cells was carried out. Experimentally was shown, that the peak efficiency 7.8 % of solar cells is observed at the thickness of CdS layer 0.6 microns, thickness of CdCl2 layer 0.07 microns, thickness of NaCl layers 0.2 microns. The first time positive influence of the solar irradiation on the CdTe solar cells efficiency was founded. After 200 minutes of the solar irradiation the efficiency increased up to 8.9%.

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S.P. Novosyadlyy, R.I. Zapukhlyak, P.I. Melnyk

Nonequilibrium Impulse CV-Characteristics of MOS Structures for Electrophysics Prognosis Reliability of Structures VLSI

Vasyl Stefanyk Prearpathian National University
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine

In the article properties of the nonequilibrium impulse CV-characteristics of MIS (MOS) structures derived in response to a trapezoidal voltage pulse with edge times shorter than the recharge time constants of the interfase and semiconductor (Si) bulr electron state ate analysed. It is shown how such nonequilibrium CV-characteristics can be used for electrophysics ptognosis reliability of structures VLSI.

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.V. Lyapina, .. strzhytski

To the Question about the Receipt of Functional Condensation Coverers by Direct Evaporation in a Vacuum

Odessa National Academy of Food Technologies,
112, Kanatna Str., Odessa, 65039, (0482) 29-11-31, E-mail:profAIK@ipss.net

A task about forming of multicomponent coverers by direct evaporation in a vacuum is considered in a general view. On the example of double (Cu-Sn) and triple connections (Cu-Sn-Ni and Cu-Sn-Al) the analysed basic conformities to the law of forming of condensates: kinetics of evaporation and distributing of components on the thickness of condensate. General approaches are considered to the process control of evaporation with the purpose of receipt of the set properties.

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G.I. Vorobets1, M.M. Vorobets1, T.A. Melnychuk1, A.G. Shkavro2

Structural changes of films al, SI2, SI owing to an aging after a pulse photon irradiation and their influence on the characteristics of contacts AL-N-SI with a schottky barrier

1Yu.Fedkovych Chernivtsy national university, physical faculty,
2 Kotsjubynskyi Str., Chernivtsi 58012, Ukraine, E-mail:rt-dpt@chnu.cv.ua
2T.Shevchenko Kyiv National university, radiophysical faculty,
64 Volodimirska Str., Kiev 01017, Ukraine, E-mail:

The features of morphological changes of thin films of aluminium, silicon oxide and contact layers of monocrystal silicon in vertical thin-film structures Aln-n+-SiAl, Al(tunnelly thin SiO2) n-SiNi with a Schottky barrier owing to processes of an aging after a thermal treatment and pulse laser irradiation by methods of an optical and raster electronic microscopy is explored. The influence of a transition thin-film layer of a silicon oxide between Al and Si and of an oxide layer Si2 on perimeter of contact in integrated structures Aln-n+-SiAl on physical processes of a degradation of contacts and change of their electrophysical characteristics is analysed.

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