PCSS, V.6, N4, 2005


Mirosław Pawłot

Dynamics of Temperature Changes in Power Transmission Trunks at Joints of Conductors of Different Cross-Sectional Areas

Lublin University of Technology, (Poland)

Calculations of current-carrying capacity of electrical conductors as a rule are performed at the assumption of infinite length of the conductors. In such a case heat emission proceeds by convection or radiation. The situation is different when short sections of electrical conductors get heated. Then, axial heat flow can occur, which can be of significant effect on the temperature distribution over the conductor and on the shape of heating curves.
The paper presents an analysis of temperature distribution over a 5-meter section of a copper strand of the 16 mm2 cross-sectional area fed with the use of conductors of 70 mm2 cross-sectional area at the passage of continuous currents of various values. Experimentally obtained temperature distribution over the conductor and shapes of heating curves indicate considerable effect of axial heat flow in the conductor heating process.
Keywords: conductors of different, obtained temperature, electrical conductors.

Full text (on original language) .pdf (1825kb)

Ya.V. Zaulychny, A.K. Sinelnichenko, A.Yu. Garmash, O.Yu. Khyzhun

X-Ray Emission Spectra of Cubic TaCxN~0,75-x Carbonitrides

Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine,
3, Krzhyzhanivsky Str., Kyiv, 03142, Ukraine

X-ray emission spectroscopy (XES) was used to study the electronic structure of substoichiometric cubic tantalum carbonitrides TaCxNy, where x+y~0.75. For the above system, the XES TaLb5, NKa and CKa bands were obtained. It has been established that, substitution of carbon atoms by nitrogen atoms in the TaCxN~0,75-x system under study results in decreasing the intensity of the main maximum of the TaLb5 band and increasing its half-width. For all the studied substoichiometric tantalum carbonitrides, half-widths of the NKa and CKa bands remain constant within the experimental error. Results of the present experimental studies of the TaCxN~0,75-x system indicate that, substitution of carbon atoms by nitrogen atoms leads to increasing the metallic component and decreasing covalent component of the chemical bonding. A strong hybridization of the Ta5d-like and C(N)2p-like states is characteristic for all the compounds of the TaCxN~0,75-x system studied.
Keywords: X-Ray emission spectroscopy; Tantalum carbide; Tantalum nitride; Electronic structure; Chemical bonding.

Full text (on original language) .pdf (314kb)

A.V. Konstantinovich1, I.A. Konstantinovich2

The Features of Radiation Spectrum of Charged Particles Moving in Magnetic Field in a Transparent Medium

1Chernivtsy National University,
2, Kotsybynsky Str., Chernivtsy, 58012, Ukraine E-mail:theormyk@chnu.cv.ua, aconst@hotbox.ru
2Institute of Thermalelectricity NAS and MES of Ukraine

By the improved Lorentzs self-interaction method on explored the fine structure of the spectral distribution of power of synchrotron radiation of two electrons, which move along a spiral in constant magnetic field in a transparent medium in relativistic case. The spectra of synchrotron, Cherenkov and synchrotron-Cherenkov radiations of one electron moving along a spiral are analyzed.

Full text (on original language) .pdf (336kb)

M.D. Raransky, A.M. Slyotov

Optical and Structural Properties of ZnSe:Mg

Yriy Fedkovych Chernivtsy National University,
2, Korsubynskyy St., Chernivtsy, 58012, Ukraine, tel, (03722) 44221, E-mail:Lslyotov@mail.ru

Structural and luminescentional properties of the layers, which obtained by thermo diffusion of the isovalent impurities Mg in the host zinc selenium monocrystals, is investigated. The nature of recombination centers and optical processes with its participation is discussed. It determines the properties of ZnSe:Mg.

Full text (on original language) .pdf (291kb)

D.M. Freik, M.A. Ruvinsky, L.I. Nykyruy, V.V. Boryk, O.V. Tkachyk

Dominant Point Defects in AIVBVI Crystals at the Two-Temperature Annealing

Physical-Chemical Institute at the Vasiliy Stefanyk Precarpathian National University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine,

On the basis of model of deriving of own atomic Fraenkel defects of monochalkogenide of lead PbX (X - S, Se, Te) at two-temperature anneal is obtained analytical expressions for dependence of concentration (n) of carriers and temperature (Tn-p) thermodynamic n-p-transition from technology factors: temperatures of annealing (1) and partial pressure a vapour chalkogen. The phase diagrams of equilibrium are build, the requirements of forming of a material n- and p-type conductance with by given concentration of carriers are spotted.

Full text (on original language) .pdf (650kb)

B.M. Kalivoshka, S.S. Novosad

Electret state in cadmium iodide crystals caused by the thermogradient polarization

Ivan Franko Lviv National University,
50, Dragomanov Str., Lviv, 79005, Ukraine
E-mail:kfbme@electronics.wups.lviv.ua, novosad@physics.wups.lviv.ua : +(03422) 59-60-75

Electret properties of cadmium iodide layered crystals polarized during one side cooling in the dark from 295 to 90 K by the capacitor method with insulating contacts were investigated. The formation of thermogradient electret and photosensitivity in the bandgap absorption and infrared regions of spectrum were detected. The photohromic electret state is creating in CdI2 during it preirradiation at room temperature which cause the change of the thermogradient electret field direction.

Full text (on original language) .pdf (355kb)

V.V. Kidalov1, G.A. Sukach2, .D. Bayda1

Morphology of porous n-GaAs

1Berdyansk State Pedagogical University,
2V.E. Lashkarev nstitute of Semiconductor Physics NAS of Ukraine

Porous GaAs layers were obtained by anode electrochemical etching of n-GaAs wafers by treatment in C2H5OH and subsequent etching in KOH solve. Morphology of porous GaAs was investigated with the help of SEM (scanning electron microscopy). Composition of porous GaAs surface was studying by X-ray photoelectron spectroscopy. Porous GaAs layers was studying by Raman spectroscopy.

Full text (on original language) .pdf (631kb)

R.M. Pasternak

Experimental Studies and Physical Analysis of Transient Current in PbI2 Monocrystal

Lutsk state technical university,
Lvivska st. 75, Lutsk, 43018, Ukraine,
tel. (03322) 6-34-20, E-mail:fizik@fiz.lstu.lutsk.ua

Process of an establishment of a current in PbI2 monocrystal is investigated at enclosing a jump of voltage on it. It is shown, that character of transients depends on the enclosed voltage. The analysis of physical factors which influence these processes is carried out. It is specified on feature of use of a method of transient currents and borders of its application.

Full text (on original language) .pdf (285kb)

P.V. Galiy1, T.M. Nenchuk1, L.I. Yarytska2

Exoelectron Emission Spectroscopy of Nearsurface Layer of Monocrystalline Silicon

1Ivan Franko National University of Lviv, Department of Electronics
79005, Lviv, 50 Dragomanov str.; E-mail:nenchuk@electronics.wups.lviv.ua
2Institute of the Fire Defence of Lviv MOE of Ukraine, Chair of Fundamental Sciences 79007, Lviv, 35 Klepariv Str.

The defect nearsurface layer obtained by low temperature deformation due to mechanical scribing of the monocrystalline Si (111) surface by diamond cutter have been studied by method of photothermostimulated exoelectron spectroscopy. The probable mechanisms of photothermostimulated exoelectron emission (PTSEE) maxima appearance and the nature of emissive active centres are considered. The calculations of PTSEE kinetics parameters and concentrations of emissive active centres were conducted on the base of experimental PTSEE spectra of mechanically scribbed c-Si.

Full text (on original language) .pdf (277kb)

L.V. Dekhtyaruk, I.Yu. Protsenko

Thermoelectric Coefficient Multilayer Polycrystalline Films

2, Rymskogo-Korsakova Str., Sumy, 40007, Ukraine, E-mail:protsenko@aph.sumdu.edu.ua

Exact and asymptotic expressions are derived for thermoelectric coefficient (TC) a multilayer polycrystalline films. TC non monotonous dependence upon the thickness ratio of the layers is predicted, which is sensitive to the character of the electron interlayer boundary interaction. A detailed numerical analysis of the TC is performed in a wide range of layer thicknesses with varying parameters describing the bulk and surface relaxation of the charge carriers.

Full text (on original language) .pdf (353kb)

V.P. Mahniy1, V.P. Mazyr2, I.V. Tkachenko1

Mechanisms of Defect Formation in the ZnSe:Te Diffusive Layers

1Yuriy Fedjkovych Vhernivtsy National University,
2, Kotsybynsky Str., 58012, Chernivtsy, Ukraine, E-mail:oe-dpt@chnu.edu.ua
2Ivano-Frankivsk National Technical University of Oil and Gas,
15, Karpatska Str., Ivano-Frankivsk, 76019, Ukraine

Luminescent properties are explored of layers, created by Tellurium diffusion in the unimpurity solution crystals of Zinc Selenide. It is shown, that Tellurium is heals the Selenium vacancies and generates additional vacancies in cation sublattice. Computation of ensemble of own point defects in layers made at 920 testifies to that, that the one-charge vacancies of Selenium prevail at them. Their concentration at 300 arrives at  1022-3 and exactly this centres accountable for forming a intensive green stripe of luminescence of the ZnSe layers:Te.

Full text (on original language) .pdf (232kb)

D.M. Freik, V.M. Klanichka, L.Y. Mezhylovska, V.F. Pasichnyak

Defect Formation Processes in Lead Chalkogenides Films Grown by Vapor Phases

Physical-Chemical Institute at the Vasiliy Stefanyk Precarpathian National University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:freik@pu.if.ua

On the bases of the physical-chemical analyzes and from the quasi-chemistry and thermal-dynamics there are shown defect formation processes in lead chalkogenides thin films at the growth from vapor phase. There are calculated the charge states spectrum of defects on cationic sublattice and pressure and temperature dependence on the both defect and charge carriers concentrations in PbX (X S, Se, Te) thin films.

Full text (on original language) .pdf (557kb)

R.I. Bihun, Z.V. Stasyuk

The Influence of Stibium Subatoms Surfactant Layers on Structure and Electron Transport in Nanometer Thick Copper Film

Ivan Franko Lviv National University
50, Dragomanova Str., Lviv, 79005, Ukraine

The structure and electrical properties of Cu nanometer thick films deposited on polished glass surface and glass surface predeposited with stibium surfactant layers were investigated. It was shown that subatom Sb layer (mass thickness 1-2 nm) hasted Cu films metallization. Predeposited subatom Sb surfactant layer course formation of more fine-dyspersated thin Cu films. The experimental results were explained within the framework of the classical and internal size effect theories.

Full text (on original language) .pdf (557kb)

L.G. Ilchenko1, V.V. Lobanov1, V.V. Ilchenko2

The Pair Charges Interaction on the Surface of the Superthin Films with the Quantum Size Spectrum of the Electrons

11Institute of Surface Chemistry NAS of Ukraine,
Generala Naumova st.17, Kiev 03164 Ukraine
2Radiophysical Dept., Kiev University,
Volodimirska st. 64, Kiev, 02033 Ukraine E-mail:vai@rpd.univ.kiev.ua

By theoretical analysis in the framework of nonlocal electrostatics it is shown that for superthin films with a discrete electron energy spectrum (quantum size (QS) films) the potential of the pair charges interaction W(R,x,L) on the surface has the non-monotonic dependence on the thickness L of the QS film. Such non-monotonous character of the pair charges interaction near the surface of the QS films can lead to the size dependence of the chemical processes flowing on a surface and, as a result, to stipulate the dependence of the macroscopically measurable physical magnitudes near the surfaces of the metal films different on the thickness L.

Full text (on original language) .pdf (285kb)

V.Ya. Mikhailovsky, L.T. Strutynska, .V. Chaikovska

Mathematical Model of a Heterogeneous Process for Oxidation of 3, 4 Hydrocarbons on Oxide Catalysts

Institute of Thermoelectricity of NAS Ukraine and Ministry of Education and Science of Ukraine
General P.O. Box 86, 58002, Chernivtsi, Ukraine, tel. (03722 ) 44422

Mathematical model of a heterogeneous process for oxidation of hydrocarbons under conditions of opposite reagents delivery to catalyst is studied. Expressions to determine the distribution of concentrations of reagents, temperature and reaction rate in a catalyst layer of various structure are given. The possibility of using mathematical simulation to determine optimal conditions for carrying out the process of catalytic oxidation of hydrocarbons is shown.

Full text (on original language) .pdf (489kb)

V.. Kaurkovska

Kinetic analisis of H2O-thermodesorption in vacuo from V2O3 and VO2 surfaces

Institute of Surface Chemistry NAS of Ukraine,
Generala Naumova st.17, Kiev 03164 Ukraine E-mail: user@surfchem.freenet.kiev.ua, kaurkovskaya@yandex.ru

The kinetics of H2O thermodesorption from surfaces V2O3 and VO2 oxides has been investigated by thermoprogrammed desorption mass spectrometry (TPDMS) at 293-490 K. It was shown that kinetic equation describing H2O-thermodesorption from V2O3 and VO2 surfaces is identical to that discribing VO2 phase transition (PT). Local structure deformations at occuring at T<T by 22-30 K, were T is temperature of PT, led to significant change of thermodesorption mechanism. Namely, the restructurisation of H2O desorption. Additionaly, existence of littles quantities of phase V3O5 on V2O3 surface was supposed. The restructurisation of phase V3O5 surface before its PT in mass cause by some change of H2O desorption at [T]<T (443 K).

Full text (on original language) .pdf (291kb)

.. Hnativ, Z.F. Tomashik, V.. Tomashik, .B. Stratiychuk

Chemical Etching of CdTe and Cd1-xZnxTe Single Crystals be the Etchant Compositions of the H2O2-HBr System

V.Ye. Laskaryov Institute for Semiconductor Physics of National Academy of Sciences of Ukraine,
41, Nauki ave., Kyiv, Ukraine, E-mail:hnativ@isp.kiev.ua

Mechanism and kinetics of physico-chemical interaction of CdTe and Cd1-xZnxTe solid solutions with the etchant solutions of the H2O2-HBr system in reproducible hydrodynamics conditions using a device of chemical dynamic polishing has been investigated for the first time. There were determined the compositions of polishing and unpolishing etchant compositions. It was shown the influence of zinc content in the Cd1-xZnxTe solid solutions both on the etching rate and on the nature of chemical dissolution of the semiconductor materials.

Full text (on original language) .pdf (280kb)

V.V. Prokopiv L.Y. Mezylovska, V.B. Vanchuk, V.V. Prokopiv (yong.)

Equilibrium Constants of Quasi-Chemical Reactions of Points Defect Formation by Any Charge States on Lead Tellurium

Physical_chemical Institute at the Vasyl Stefanyk Prekarpathian National University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine

In paper the value of equilibrium constants of quasi-chemical reactions of own points defect formation on lead tellurium on the basis of approximation of the experimental data of two-temperature is specified to annealing of crystals by theoretical models in supposition of existence double-charge interlattice atoms and single-charge vacancies in metallic sublattice. On the basis of analysis the general condition both of electro-neutrality dependences of defect concentration and charge carriers are found on a temperature and partial pressure of tellurium during realization of two-temperature annealing.

Full text (on original language) .pdf (328kb)

V.V. Ilchenko, A.V Yushchenko, R.V. Gul, V.M Telega

The influence of vapor etyl alcohol on the electrophysical parameters of the heterostructure of the nano scale film (In2O3+ 5%Sn) - p - Si

Radiophysical Dept., Kiev University, Volodymyrska st, 64, Kiev 01033, Ukraine, -mail: YAV@mail.univ.kiev.ua, VAI@mail.univ.kiev.ua, GRV@mail.univ.kiev.ua

The research by mass-spectrum method of the influence chemo mechanical till on the properties of the surface graphitized carbon fiber and graphite. It is shown how a processing influences on intensity of the characteristic points and on the distribution of the intensities in the mass-spectrum. It is producing the mass-spectrums of the carbon fibers in the range of temperature 393-1073 K.

Full text (on original language) .pdf (317kb)

H.O. Sirenko, .. Fedoryshyn

The gas distinguished from the carbon fillers in the deep vacuum

Vasyl Stefanyk Precarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine

The research by mass-spectrum method of the influence chemo mechanical till on the properties of the surface graphitized carbon fiber and graphite. It is shown how a processing influences on intensity of the characteristic points and on the distribution of the intensities in the mass-spectrum. It is producing the mass-spectrums of the carbon fibers in the range of temperature 393-1073 K.

Full text (on original language) .pdf (339kb)

N.I. Domatsevich

Influence of modifiers on electrical properties polymeric thin films

Lviv Comercial Academy, department of the chemistry and physics,
79008, Ukraine, Tugan-Baranovscy str., 10, E-mail:standar@lac.lviv.ua

The changes of value of the agreed electroresistance polymeric modified thin films during the accelerated tests were investigated. The resource of work of coverings using the data of experiments was determined.

Full text (on original language) .pdf (610kb)

L.S. Monastyrskii, I.B. Olenych, O.V. Galchynskii

Biopolymer-porous silicon heterocomposition visible lightemitting and photothermostimulated depolarisation

Ivan Franko Lviv National University,
50, Dragomanov str., Lviv, 79005, E-mail:monastyr@yahoo.com

Presence of thermoelectret state in heterocomposition on the porous silicon (PS) base due to the investigations of photothermostimulated depolarisation investigations was fixed. Porous silicon TSD spectra on the base of Fredholm equation give the possibility to calculate by numerical method the distribution of state density in the porous silicon band gap and to identify types of the electrical defects caused by the presence of the polymer on the PS surface. The change of photoluminescence and photothermostimulated depolarisation spectra generates due to the presence of biopolymers can be applied as biosensor on the the PS base.

Full text (on original language) .pdf (262kb)

L.Yu. Ostrovskaya1, V.G. Deibuk2, O.V. Voznyy3, M.M. Sletov2, A.V. Vasin4

Study the Wettability of III-N Thin Films in Dependence from the Degree of Bond Ionicity and Surface Layers Polarity

1V.Bakul Institute for Superhard Materials, NAS of Ukraine (Kyiv),
2Chernivtsi National University (Chernivtsi),
3University de Sherbrooke (Sherbrooke, Canada),
4V.E.Lashkarev Institute of Semiconductor Physics of NAS of Ukraine (Kyiv)

For the 0,5 to 2 mm thick GaN, AlN, InN films deposited on a-Al2O3 substrates and for BN films on Si with the different fraction of cBN (from 10 to 70%) the effect of bond ionicity on the wettability and surface energy of III-nitrides (from BN to InN) have been studied. The analysis of chemical bonding is made in different models (Phillips ionicity, Vogs polarity and Garcia-Cohens charge asymmetry coefficient). The pseudopotential calculations of electronic charge distributions along the bonds and the charge asymmetry coefficients (BN 0,35; GaN 0,52; AlN 0,61; InN 0,64) allow us explain the wettability features of III-nitrides. The surface energy was calculated by Fowkes equation using wetting angle measurements. Obtained data allow us confirm that chemical bonding in III-nitrides is the surface energy determining factor. Increase in the bonding charge asymmetry coefficient leads to increasing of the surface energy of these compounds. The higher the film bond ionicity, the lower wetting angle values both for water and glycerin. N-containing face of the film wetted better than Me-face due to acid-base interaction between N atoms electrons and water protons. Anomalous change of gi value in GaN was observed in the GaN surface energy too.

Full text (on original language) .pdf (437kb)

V.A. Smyntyna, O.A. Kulinich, M.A. Glauberman, G.G. Chemeresuk, I.R. Yaunsky

Process Current Flow Modeling in Real Metal-Silicon Structures with Schottkys Barrier

Training, Scientific-Investigation and Production Center at Mechnikov Odesa National University
4 Marshala Govorova Str., Odesa, 65063, Ukraine, E-mail: eltech@elaninet.com

The process current flow modeling in real metal silicon structures with used modern method of research in limits of diffusion and thermoelectric theories and used on barrier properties of the structural defects and carrier mobility depending on different mechanisms of the scattering has been proposed.

Full text (on original language) .pdf (1052kb)

D.M. Zayachuk1, S.I. Krukovsky2, I.O. Mrykhin3, O.I. Izhnin2, D.L. Voznyuk3

Peculiarities Making of GaAs/AlGaAs Laser Structures by LPE Method under Yb Influence

1Lviv Polytechnic National University,
12 Bandera St, Lviv, 79013, Ukraine, -mail:zayachuk@polynet.lviv.ua
2Scientific Research Company Carat, Lviv, Ukraine
3Ivan Franko Lviv National University, Lviv, Ukraine

Potential of combined using of isovalent substitution of atoms in metal sublattice and rare earth impurities for making laser structures on the base of GaAs by LPE method is investigated. Effect of amplification of ytterbium gettering action by aluminium presence in the process of GaAs based epitaxial layers growing is revealed. The effect consists in intensification of decreasing of free carrier concentration in AlGaAs grown by LPE method under influence of Yb impurity when Al concentration in initial melt-solution increases. Optimal concentration ranges of ytterbium impurity in initial melt-solution for growing of AlGa1-As with = 0,1 0,3, which ensure suitable for making of laser structures level of electro physical parameters, are determined.

Full text (on original language) .pdf (477kb)

I.S. Manak1, V.K. Kononenko2, S.V. Nalivko1

Asymmetric multiple-quantum-well heterostructures with a wide flat amplification spectrum

1Belarussian State University,
Fr. Scorina Pr., 4, 220050 Minsk, Belarus Phone: 375 17 2781313, Fax: 375 17 2121016, E-mail: manak@bsu.by 2Stepanov Institute of Physics NASB,
Fr. Scorina Pr., 70, 220072 Minsk, Belarus
Phone: 375 17 2840435, Fax: 375 17 2840879, E-mail: lavik@dragon.bas-net.by

Due to asymmetric quantum-well heterostructures new possibilities to control spectral, power, and temporal properties of laser diodes and to widen their functionality are opened up. In the paper, main attention is devoted to the results obtained under study of spectral characteristics of quantum-well lasers with active region layers of different widths and compositions. Simulation examples are given for band diagrams of the active region, shape of the gain spectrum, and tuning curves. Attractiveness of designed laser sources for special applications is mentioned.
Key words. Quantum-well heterostructure, laser diode, band diagram, gain spectrum, tuning curve.

Full text (on original language) .pdf (346kb)

M.L. Kovalchuk1, Z.I. Zakharuk1, A.I.Rarenko1, Ye.V. Rybak1, Ye.M. Kosenkov1, E.B. Talyanski2

Tunable optical filters and spectrometric elements based on CdHgTe and CdMnHgTe graded band-gap structures structures

1Yuriy Fedkovich Chernivtsi National University,
2, Kotsyubynskiy Str., Chernivtsi, 58012,Ukraine, E-mail:microel@chnu.cv.ua 2Stardust Technology, Inc. R&D Dept.,
4278 Arthur Kill Rd., Staten Island, NY, USA

The present paper deals with calculations and experimental dependencies of CdxHg1-xTe and CdxMnyHg1-x-yTe grown graded band-gap structures (GBS) on their chemical composition and its distribution along thickness. Calculations and construction of tunable optical filters and spectrometric elements based on these GBS for =16 m IR-region are represented.

Full text (on original language) .pdf (302kb)

Jerzy Uljanow, Krzysztof Waczyński

Study of the Structure of the SnO2 Thin Films Obtained by the RGTO Technique

Instytut Elektroniki, Politechnika Śląska,
Akademicka 16, 44-100 Gliwice, Poland , E-mail:Jerzy.Uljanow@polsl.pl (J.Uljanow)

The results on the use of technology of rheotaxial growth and thermal oxidation to prepare sensory layers of stannic oxide (SnO2) are presented in this study. Sensory properties of the SnO2 layers greatly depend on a stage of tin layer rheotaxial growth. Observations of tin layer surface made after the process of rheotaxial growth and of the SnO2 surface on the oxidation stage performed by means of a scanning electron microscope permitted drawing of many substantial conclusions regarding technology of production. The worked out technology made it possible to form sensor structures, which were next measured.
Keywords: Hydrogen, Charge, Boson, Fermions, metal, mass-passing.

Full text (on original language) .pdf (593kb)

T.A. Lenj1, I.V. Ovsienko1, L.Yu. Matsuy1, A.I. Brusylovets2, L.M. Kapitanchuk3

The Influence of Thermal-Chemical Processing on Structure-Phases Translation in Nano-Carbon Material

1Taras Shevchenko Kyin National University, Physical Dept.,
2, Glushkova Av., Kyiv, 03680, Ukraine,
2Taras Shevchenko Kyin National University, Chemical Dept.,
62, Volodymyrska Str., Kyiv, 01033, Ukraine,
3Paton Institute of Electrical welding NAS of Ukraine,
3, Bozhenka Str., Kyiv, 01006, Ukraine, E-mail:intercalant@univ.kiev.ua

The paper presents the results of investigations of nanocarbon material (NCM) structural and phase contents on each purification stage. A detailed analysis of different schemes of thermal and chemical treatments of NCM has been carried out. The optimum regime of purification of NCM was determined. It was shown that metal-catalyst particles are completely removed from NCM at usage of the offered schemes of purification.

Full text (on original language) .pdf (1098kb)

L.S. Semko, Ya.I. Kruchek, Yu.A. Shevlyakov, L.S. Dzyubenko, P.P. Gorbik, O.O. Chuiko

Intercoupling between structure, electro-physical and sensory properties of the composition materials based on polyvinylchloride and thermo expanded graphite

Institute of surface chemistry, National Academy of Science of Ukraine

The intercoupling between structure, electro-physical and sensory properties of the composition materials (CM) based on polyvinylchloride (PVC) and thermoexpanded graphite (TEG) are determined. This system has only one percolation threshold. For prediction of the resistance values dependence on TEG concentration, a typical for the percolation theory equation is proposed. A series of CM based on PVC and TEG with wide electro-physical properties are produced. For the sensors producing, electro conducting materials with the TEG contains 0.06 0.15 volume part are proposed.

Full text (on original language) .pdf (445kb)

H.O. Sirenko, L.Ya. Midak, V.P. Sviderskyy, L.V. Bazyuk1

The influence of neighboring surfaces on antifriction properties of composite polymer materials. Carbon-plastics by ChMA-technology

1'Vasyl Stefanyk' Prekarpathian National University
2Khmelnytsk National University

The dependence of antifriction properties of polymer composites filled by carbon fiber materials from mechanical and thermal-physics properties of neighboring surfaces of solid states has been researched. It has been ascertained, that there arent the dependences between antifriction properties and hardness, other physic-mechanical and thermophysical properties of counterface with blankets. It has been ascertained, antifriction properties are determined by state of starting surface of counterface and surface layers, which are formed on surfaces of composite and neighboring surface in friction for composite materials by ChMA-technology.

Full text (on original language) .pdf (382kb)

O.M. Buhay, P.O. Pavlenko, O.M. Kulik, Yu.V. Rogulskiy, L.F. Sukhodub

Investigation of sample distribution on the graphite furnace surface by means of scanning electron microscopy

Institute of Applied Physics NAS Ukraine,
40030, Sumy, Petropavlovskaya Str., 58

The distribution of samples on the graphite surface was studied by scanning electron microscopy. Investigations has shown that the distribution depends on what chemical compound the sample forms after pyrolysis and also on its ability to interact with graphite.

Full text (on original language) .pdf (2038kb)

M.A. Ruvinskii

About the Addition Rule of Probabilities in Quantum Mechanics

Vasyl Stefanyk' Precarpathian National University,
57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine,

As shown, the interference of probabilities in quantum mechanics may be explained on the basis of classical theorem of the probability theory about the addition probability of events related with two different and compatible typies of motions those follow from the wave-particle dualism of microcosm.

Full text (on original language) .pdf (282kb)