Effect of Magnetic Field on Hypersonic Attenuation by Electrons
in Rectangular Quantum Wire

¹Vasyl Stefanyk' Precarpathian National University, 57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine

²Ivano-Frankivsk National Technical University of Oil and Gas, 15, Carpatska Str., Ivano-Frankivsk, 76000, Ukraine,
bruvinsky@gmail.com

The effect of quantum magnetic field on attenuation of the lowest width mode of hypersound by electrons in a rectangular quantum wire is theoretically investigated. The energetic spectrum and the wave functions of electrons in rectangular wire at the high longitudinal magnetic field have been determinated. The magnetic and dimensional dependencies of electron hypersonic attenuation in wire have been obtained. The numerical results have been presented for the case of GaAs wire.

Peculiarities of the Antiferromagnetic Ordering in a Model of Quasi-Onedimensional Organic Superconductors

Ternopil State Technical Uneversity, 56, Ruska St., Ternopil, UA- 46001, Ukraine, E-mail: skorenky@tu.edu.te.ua

Within the single-electron retarded Green function method, with use of effective Hamiltonian in configurational representation the transition from antiferromagnet to paramagnet state in narrow-band low-dimensional system has been studied. The form of effective exchange parameter zJ_eff/w which govern the antiferromagnetic order stabilization in quasi-onedimensional system with strong Coulomb correlation has been found. At increase of zJ_eff/w the temperature of the phase transition (Neel temperature) increases rapidly. The calculation of phase (p-T) diagram of antiferromagnet-paramagnet transition for the system (TMTSF)₂PF₆ has been carried out. The obtained results agree with experimental data.

Key words: quasi-onedimensional superconductors, antiferromagnetic ordering, effective exchange, correlated hopping of electrons.

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The Dispersion of the Coefficient of Reflection from the Interface of a One-Dimensional Crystal Heterosystem

Ivan Franko Drohobych State Pedagogical University,
24, Ivan Franko Str., Drohobych, UA–82100, Ukraine,
e-mail: ioshak@mail.ru

In the paper a three-layer nanoheterostructure with a transitive layer at the separation boundaries is described by a Kronig-Penney model with –function potentials. The distance between the farthest atoms of the transitive layer is a parameter of the problem and ranges from zero to two lattice parameters of crystals. An exact solution is obtained for the reflection coefficient  which makes it possible to determine the dependence of the factor on a wave vector, widths of a transitive layer and a monolayer of the nanoheterostructure. The specific calculations performed for the  heterosystem showed that the envelope-function approximation and the effective mass method at small values of a wave vector yields quite good results provided the Harrison boundary conditions are used with appropriately chosen parameters.

 
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V.A. Romaka^1,2, M.G. Shelyapina³, D. Fruchart⁴, Yu.V. Stadnyk⁵,

Yu.K. Gorelenko⁵,  L.P. Romaka⁵, V.F. Chekurin¹

Conductivity Features of the n-ZrNiSn Intermetallic Semiconductor Strongly Doped with Mn. I. Electronic Structure Calculation

¹Ya. Pidstryhach Institute of Applied Problems of Mechanics and Mathematics National Academy of Scieces of Ukraine,
Naukova Str. 3-b, 79060 Lviv, Ukraine;
²National University “Lvivska Politechnika”, Bandera Str. 12, 79013 Lviv, Ukraine;
³V.А. Fock Institute of Physics, St.-Petersburg State University,
Ulyanovskaya Str. 1, Petrodvorets, 198504, St.-Petersburg, Russia;
⁴Laboratoire de Cristallographie, CNRS, BP 166, 38042 Grenoble Cedex 9, France;
⁵Ivan Franko Lviv National University, Kyryl аnd Mephodiy Str. 6, 79005 Lviv, Ukraine

Calculations of the electronic structure of the ZrNiSn intermetallic semiconductor, strongly doped with the acceptor impurities of Mn, were carried out. The calculations were performed for the paramagnetic and ordered distribution of the Mn atoms. Doping of the n-ZrNiSn semiconductor results in a change of conductivity from electron to hole-type and realization the transition of conductivity insulator-metal (Anderson transition). Thus, the conductivity of semiconductor is determined mainly by the Mn d-electrons and exclusively with spin-down directed. A total magnetic moment linearly depends on the concentration of acceptor impurities of manganese, while the magnetic moment of Mn atoms quite quickly becomes saturated and practically unchanged for dopant concentrations x over 0.1.

Key words: semiconductor; acceptor impurity; Fermi level; electrical conduction; density-of-states.

 
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V.A. Smyntyna, O.A. Kulinich, M.A. Glauberman, G.G. Chemeresuk,
I.R. Yatsunskiy, O.V. Svyridova

The Influence of Defects on Distribution of a Dopant Concentration and Defect Formation at Silicon Doping

I.I. Mechnikov National University, Marshala Govorova Str, 4, Odessa, 65063, Ukraine,
E-mail: eltech@elaninet.com

In this paper the influence of defects on distribution of a dopant concentration on a surface and on depth of monocrystal silicon wafers are given. It set, that this distribution of impurity on a surface is connected to the distribution of oxygen concentration which, in turn, is connected to structure of silicon wafers.

The silicon doping result in occurrence of structural defects as dislocation nets in silicon wafers which precipitated oxygen and, it was not observed aggregations of a dopant about dislocation nets with concentration exceeding medial.

Key words: silicon, doping, defects, dislocation.

 
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P.D. Maryanchuk, D.P. Kozyarskyy, E.V. Маistruk

Physical Properties of Crystals (3HgSe)_1-x(Al₂Se₃)_x, Doped by Manganese

Yu.Fedkovych Chernivtsi National University, M.
Kocubynsky Street, 2, 58012 Chernivtsi, Ukraine (037)22-4-68-77, emaistruk@list.ru

Researches of kinetic factors of crystals (3HgSe)_1-x(Al₂Se₃)_x (doped by manganese) are carried out during the interval Т = 77 - 300 К and Н = 0,5 - 5 kOe before and after the thermal treatment of samples in vapour components. Before the thermal treatment factor of the Hall (R_H) in researched crystals does not depend on temperature, electroconductivity (σ) crystals has metal character, thermoelectric motive power (α) increases with the growth of temperature. Thermal treatment of samples in vapour components results in the change of the electrons concentration.

Magnetic susceptibility of (χ) crystals (3HgSe)_1-x(Al₂Se₃)_x (doped by manganese) is investigated at the interval of temperatures Т = 77 - 300 K at Н = 4 kOe by the method of Faraday before and after the thermal treatment of samples in vapour components. It is established, that features χ are caused by the presence in crystals of such clusters as Mn-Sе-Mn-Sе, of different size, in which the indirect exchange interaction of antiferromagnetic character between the Mn atoms through the atoms of chalcogenide is carried out, and the Mn atoms with 3d⁴ and 3d⁵ electrons configuration. Thermal treatment of samples in vapour components results in the change of the size of existing crystal clusters and in the change of the electrons configuration of Mn atoms from 3d⁴ to 3d⁵.

Key words: crystal, electroconductivity, magnetic susceptibility, cluster.

 
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Z.I. Zakharuk¹, S.G. Dremlyuzhenko¹, M.L. Koval’chuk¹, E.S. Nikonyuk² A.I. Rarenko¹

Researches of the Si Phase Inclusions in CdTe,
Cd_1-xMn_xTe, Cd_1-xZn_xTe Crystals

¹‘Yuriy Fedkovich’ Chernivtsi National University, 2, Kotsyubynskiy Str., Chernivtsi,
 58012, Ukraine, MLKov@mail.ru
²National University of Water Management and Conservation, 11, Soborna Str, Rivne,
33028, Ukraine, semirivne@mail.ru

The present paper deals with the results of surface heterogeneity researches of  the CdTe, Cd_1-xMn_xTe, Cd_1-хZn_хTe crystals by the x-ray and metalografic methods. By the scanning electronic microscope-microanalyzer it is shown, that these heterogeneities are often Si inclusions. They are heterogeneous and have, as a rule, Al, O, Fe, Cr, S, Cl, Mg. The contamination of material by Si occurs by quartz transferring from the region of capillary making  for the evacuation of ampule. The high density of Si inclusions leads to the strong heterogeneity of the electro-physical properties of material.

 
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G.E. Davidyuk, V.V. Bozhko, G.L. Mironchuk

Influence of Surface of Standard on the Machineries of Formation of Defects at the Electronic Irradiation of Specially Unalloyed and Alloyed by a Copper Monocristal of Sulfide of Cadmium

Volin state university, 13, Volya Av., Lutsk, 43025, tel. (803322) 4922  e-mail: ftt@lab.univer.lutsk.ua

In work specially unalloyed and alloyed by a copper monocrystal CdS were explored. The irradiation of standards by electrons with E = 1,2 MeV (by a dose Ф = 2×1017 еl/сm²) conduces to formation of mobile at a room temperature defects, and also, disintegration of initial donor – acceptor associates. More radiation monocrystal CdS turned out firm. Primary radiation defects in CdS:Cu – standards (NCu = 1018 cm^-3) form after the irradiation the second defects which act part of rapid centers of recombination and accountable for admixture photoconductivity. At saving of the exposed crystals to the rays in their near a surface region paramagnetic centers are formed. Conclusions about nature of the second radiation defects of accountable for photoactive and paramagnetic centers in the exposed standards to the rays are drawn.

 
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Ya.V. Zaulychny, Yu.M. Solonin, S.S. Zviezda, E.V. Pryluckij

Dependence of Energy Distribution of Valence Electrons of Carbon Nanomaterials in Different Atomic-Structural States on Their Sizes

Frantsevych Institute for Problems of Materials Science,
National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Str., Kiev UA-03142, Ukraine, zaulychnyj@ipms.kiev.ua

Ultra-soft x-ray emission spectroscopy was applied to study the electronic structure of a number of carbon nanomaterials. The energy distribution of valence electrons was investigated in fullerenes, onions and multi-walled nanotubes obtained using catalysts and without them. It was found that the width of the СKα-bands somewhat increases in the following sequence C60-C70-onions-nanotubes. Narrowing the spectra was revealed when decreasing sizes of nanomaterials of the same kind. It was established that shapes of the СKα-bands in C60, C70, onions, nanotubes are different due to changing the degree of πрz- and σsp2+ πрz-overlapping.

Key words: fullerene, carbon onion, nanotube, electronic structure, x-ray emission spectrum, valence band, hybridization

 
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M. Kharchenko

Using of Closed Box Deposition Technique for Preparation of Cadmium Telluride Thin Films

National technical university”Kharkiv polytechnic institute”, Kharkiv, 21 Frunze Street, 61002.

The definition of critical temperature of condensation of СdTe vapor in closed box on glass and ceramic substrates at evaporator temperature 420 – 560оС was carried out. At the indicated temperature range at a minor vapor supersaturation a single-phase СdTe films were obtained. The increasing of formation temperatures resulted in changing of grain preferred orientation from (111) to (110) at simultaneous improvement of structural quality

Key words: thin films, cadmium telluride, closed box deposition technique, structural quality

 
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I. Voynarovych¹, V. Takach², V. Cheresnya¹, V. Pynzenik¹, I. Makauz¹, S. Chernovich^1,2

Amorphous Chalcogenide-Metal Multilayers

¹Institute of Solid State Pysics and Chemistry, University of Uzhgorod,
Pidhirna Str.46, Uzhgorod, 88000, Ukraine, phone +38 031 22 32485, e-mail: sse@univ.uzhgorod.ua
²Institute of Physics, University of Debrecen, Bem ter 18/a, Debrecen, 4026, Hungary,
 phone +36 52 415222, e-mail: viki@delfin.unideb.hu

Bi(Sb)/As₂S₃ nanomultilayers (NML) were developed and produced with different modulation periods in the 4-10 nm range using the computer-controlled cyclic vacuum evaporation technology. The influence of the thermo- and/or photo-induced interdiffusion on the optical parameters and electrical conductivity were investigated in such model nanostructured materials in order to establish the possibilities of surface pattern recording and to develop the method of solid phase synthesis which allows to create materials nanostructured at different scales.

Key words: nanostructures, multilayers, interdiffusion, optical and electrical characteristics.

 
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D.M. Freik, B.S. Dzundza, V.M. Chobanyuk

Profiles of Electric Parameters in the
Thin Films of Lead Chalcogenides

Vasyl Stefanyk PreCarpathian National University,
 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail: fcss@pu.if.ua

Profiles effective and local value of electric parameters in epitaxial n- and p- type PbTe, PbSe growen from vapour phase are explored. It is shown, possibility of creation in films of n-types conductivity of two-layer n-p-structure, the parameters of which are determined by composition of preforms, and also temperatures of evaporation and deposition and after by condensation processes.

 
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G.I. Kopach¹, N.P.Klochko¹, N.D.Volkova², M.V. Dobrotvorskaya³,
V.R. Kopach¹, T.A.Li¹

Mechanism of the Electrochemical Deposition Process and Composition of Cadmium Telluride Films

¹National Technical University (Kh PI), 21,Frunze Str., 61002, Kharkiv, Ukraine
²National Aerospace University (KhAI),17, Chkalov Str., 61070, Kharkiv, Ukraine
³Monocrystal Institute, National Academy of Sciences, 60,  Lenin Av., 61001, Kharkiv, Ukraine
E-mail: li_tatiyana@mail.ru

The mechanisms of electrochemical processes in the electrolyte for obtaining of cadmium telluride semi-conducting films and in corresponding partial solutions contained ions of cadmium and tellurium were investigated by voltammetric analysis with lineal potential scanning and by cyclic voltammetric analysis methods. The differences between cathodic processes on chemically inert titanium nitride substrates and on catalytically active molybdenum surface were revealed. On the base of these investigations the nature of impurities was discovered in this work by X-ray photoelectron spectroscopy on molybdenum and titanium nitride surfaces and in the volume of cadmium telluride films was explained. The last allowed choosing the parameters of the electrodeposition process and the substrate material, which provide stoichiometric composition of the films.

Key words: cadmium telluride, X-ray photoelectron spectroscopy, voltammetric analysis, cyclic voltammetric analysis methods.

 
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S.A  Nedilko, T.A. Voitenko, M.A. Zelenko, M.O. Obolenskiy¹,
V.I.  Biletskiy¹, M.M. Chebotaev¹

High Temperature Superconducting Ceramic in the Systems
Bi_2-xLn_xSr₂CuO_6+z  (Ln-La, Nd, Y)

Taras Shevchenko Kyiv National University, Department of Chemistry,
Volodymyrska str., 60, 01033, Kyiv, Ukraine, nedilko@univ.kiev.ua
*Karazin Kharkiv National University, Department of Physics,
Svobody sq, 4, 61077, Kharkiv, Ukraine

The samples Bi_2-xLn_xSr₂CuO_6+z  (Ln-La, Nd, Y) were synthesized using the ceramic technique with precursor. For Bi_2-xLn_xSr₂CuO_6+z  (Ln-La, Nd, Y) a homogeneity region, phase composition, structural parameters, oxygen stoichiometry and magnetic susceptibility depend on their composition (x) and T_c^on value was study.

 
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Y.Y. Obedzynska,  P. M. Fochuk, Z. I. Zacharuk, I. M. Yuriychuk, O. E. Panchuk

Influence of Bi on the Electrical Properties of CdTe Under Cd Vapor Pressure

Chernivtsi National University, 2, Kotziubinskoho, 58012, Chernivtsi, Ukraine
Е-mail: fochuk@chnu.cv.ua

At first the experimental results of detailed Hall effect measurements at high-temperature defect equilibrium under Cd vapour pressure in CdTe<Bi> single crystals were performed. They indicate that at these conditions Bi forms in CdTe crystals Bi_Cd donor centres. The analysis of the free electron density temperature dependencies allows to conclude that an essential quantity of Bi-containing precipitates in the CdTe lattice exists. The study of high-temperature electrical properties in Bi-doped CdTe samples shows that the real electrical active Bi content in the investigated crystals is at some 700 K ~1×10¹⁶ at/cm³, whereas at higher temperatures point defect structure modelling indicates the possibility of the rise of electrical active Bi centers content due to partial dissolution of Bi precipitates in the crystal.

 
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S.G. Dremlyuzhenko, Z.I Zakharuk, P.M. Fochuk, A.I. Savchuk

Change of Defect System and Surface Composition of CdTe,
Cd_1-xMn_xTe, Cd_1-хZn_xTe Crystals at Treatment

Yuriy Fedkovych Chernivtsi National University, 2 Kotsjubynskyi Str.,
Chernivtsi 58012, Ukraine  Tel. +380-372-584893, e-mail: sgdrem@mail.ru

The mechanism of oxide films formation and surface composition of CdTe, Cd_1-xMn_xTe, Cd_1-хZn_xTe samples are determined on the base of thermodynamic calculations and Auger-electron spectroscopy studies. Samples surface composition was investigated after various treatments: chemical etching with  Br₂ solution in methanol; chemical and mechanical polishing in solution comprising K₂Cr₂O₇ and HNO₃; chemical and mechanical polishing in alkaline solution of colloidal silica. Chemical and mechanical polishing in alkaline solution of colloidal silica allows obtaining high-purity surface of good quality with a minimum violation of stoichiometry.

 
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S.S. Novosad, B.M. Kalivoshka

The Electret Properties of CdI₂:СuI Photochromic Crystals

‘Ivan Franko’ Lviv National University, 50, Dragomanov Str., Lviv, 79005, Ukraine е-mаіl: novosadss@rambler.ru

The electret properties of CdI₂:СuІ photochromic crystals, grown by Bridgmen-Stockbarger method, has been investigated by capacitor method with insulating contacts. The polarization current, caused by sample’s oneside cooling in the dark from 295 to 90 K, was found out. The crystal polarized during it oneside cooling owns the photosensitivity in the near edge spectrum region. The CdI₂ activation by copper impurity leads to the change of polarization and depolarization currents direction of thermogradient electrical state, formed in crystal during it oneside cooling, and weakens the material’s photosensitivity, connected with F-type centers, in the infrared spectrum region. It was found out that the electret state is formed in CdI₂:СuI crystal at the room temperature during it colouration by integral lighting of DKsEl lamp at the absence of external electrical field. The presence in the sample of intrinsic electrical field such the photochromic electret state leads to the change of polarization and depolarization currents directions of thermogradient electrical state. The possible mechanizm of colouring and uncolouring of photochromic CdI₂:СuI crystals have been discusion.

 
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S.S. Novosad, I.S. Novosad

The photo- and thermostimulated processes in photochromic CdBr₂:Cu crystals

‘Ivan Franko’ Lviv National University,
Franko Lviv National University, 1, Universytetska Str., Lviv, 79000, Ukraine,
tel. (0322) 964-679, e-mail: novosadis@rambler.ru

The photo- and thermostimulated processes in photochromic CdBr₂:Cu, CdBr₂:Cu,Cl, CdBr₂:Cu,I, crystals grown by the Bridgman-Stockbarger method have been studied. It was established, that the concentration of copper impurity, the temperature and also the homology anion impurity are influenced on the efficiency of photochemical transformations (PCT) in CdBr₂:Cu⁺ crystal. It was supposed, that appearance of unstructured additional background absorption in the region of transparency after the optical irradiation of samples of weakly alloyed CdBr₂:Cu crystals is conditioned by photodecomposition of lightsensitive {(V^2–_Cd – V_I⁺)–Cd_і⁺} centers. The PCT in cadmium bromide with considerable concentration of copper impurity are caused by change of charge state of activated centers. The complex {(Cu⁺_Cd)^––Cu_i⁺} centers are decayed and Cu²⁺_Cd-centers and nCu⁰ colloids are created in such crystals under irradiation of UV-light from the region of photosensitive. In strong alloyed systems the kinetic of photostimulated process of coloring besides the change of charge state of activated centers also are determined by the conditions of irradiation as a results of the change of optical properties and the thickness of irradiation layer of CdBr₂:Cu. The reverse process of thermal uncoloring of crystal are taken place through oxidation of Cu⁰-centers by Cu²⁺_Cd ions with the help of migration process of holes thermodelocalizated from divalent copper ions through anion sublattice to colloid metal parts.

 
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Magdalena Popczyk

The Hydrogen Evolution Reaction on Electrolytic Ni+W+Si and Ni+W+Mo+Si Composite Coatings

University of Silesia, Institute of Materials Science,
Bankowa 12, 40-007 Katowice, Poland e-mail: magdalena.popczyk@us.edu.pl

Ni+W+Si and Ni+W+Mo+Si composite coatings were obtained by electrolytic codeposition of crystalline nickel from an electrolyte containing suspension of suitable metallic and non-metallic components (W, Mo and Si). These coatings were obtained under galvanostatic conditions, at the current density of j_dep. = 0.100 A•cm^-2 and at the temperature of 338 K. Chemical composition of obtained coatings was determined by EDS method. The electrochemical activity of these coatings was studied in the process of hydrogen evolution reaction (HER) from 5 M KOH solution using steady-state polarization and electrochemical impedance spectroscopy (EIS) methods. Basing on the results of EIS measurements the rate constants of the HER were determined. It was found that Ni+W+Mo+Si composite coatings are characterized by enhanced electrochemical activity towards hydrogen evolution as compared with Ni+W+Si coatings. The reason of this is connected with the presence of additional composite component (molybdenum). Thus obtained coatings may be useful in application as electrode materials for the hydrogen evolution reaction.

Key words: Nickel, Tungsten, Molybdenum, Silicon, Composite coatings, Hydrogen evolution reaction.

 
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V.D. Alecsandrov, O.V. Sable, M.V. Savencov

Research of the Before Crystallization Supercooling
in the System Water - Pentahydrate Sodium Thiosulfate

Donbass national academy of building and  architecture
2, Dergavina Str, Makiivca, 86123, Ukraine, E-mail: cluck@mail.ru

The given work is devoted to experimental research of the before crystallization supercooling and character of crystallization of sample in the system water - pentahydrate sodium thiosulfate by the method of cyclic thermal analysis.

Keywords: crystallization, pentahydrate sodium thiosulfate, supercooling, cyclic thermal analysis.

 
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N.Vityuk¹, A.Eremenko¹ N.Smirnova¹ , P.Gorbik¹, T.Busko²,
M.Kulish², O.Dmitrenko², V.Shlapatska³, V.Higniy⁴

Influence of High-Energy Irradiation on the Structural and Photocatalytical Properties of Nanosized TiO₂/ZrO₂/SiO₂ Composites

¹ Institute of Chemistry of surface named by O.O. Chuiko NASU
17, Generala Naumova Str., Kyiv, UA-03164, Ukraine, E-mail:annaerem@voliacable.com,
²Kyiv national university named by T.G.Shevchenko Kyiv, Ukraine
³BE «Radma» IPC NASU, Kyiv, Ukraine
⁴Institute physical chemistry named by L.V.Pysargevskyy NASU, Kyiv, Ukraine

The high stable to β – irradiation (E_e = 1.8 MeV) TiO₂/ZrO₂/SiO₂ films and powders were synthesized using sol-gel method from titanium, zirconium and silicon alkoxides. The synthesized samples were monitored by SEM, XRD, EPR and Raman spectroscopy. XRD data showed the formation of anatase with the 12 nm crystals. The new signal with three g – factors: 2,009; 2,021 and 2,025 was appeared in EPR spectrum when the powders were caused by β – irradiation with the dose 4 MGy relating to the oxygen vacancy. β – irradiation of the films and powders lowers their photocatalytic activity in the process of photoreduction of Cr(VI) toxic ions but it remains still high leading to the potential possibility of the practical applications.

 
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Z.Yu. Hotra^1,2, P.Yu.Stakhira¹, V.V.Cherpak¹, D.Yu. Volynyuk¹

Investigation of Electrooptical Properties of Polyorthometoxyaniline
Prepared by Thermovacuum Deposition

¹Lviv Polytechnic National University, 12 Bandera St,. Lviv, 79013, Ukraine
tel: (032) 258-21-62, e-mail: stakhira@polynet.lviv.ua
²Rzeszów University of Technology, Rzeszów, ul. W.Pola, 2, 35-95, Poland

Thin films of polyorthometoxyaniline (POMA) were prepared by vacuum deposition at pressure of 5•10^–5 Torr and temperature range of 350-450 ⁰С. The structure of vacuum deposited films was determined by method of infrared spectroscopy. The morphology, optical and electrochromic properties of deposited POMA thin films were studied.

Key words: vacuum deposition, polyorthometoxyaniline, infrared spectroscopy

 
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O.I. Konopelnyk¹, O.I. Aksimentyeva¹, B.R. Tsizh^2,3, M.I. Chokhan²

Physical-and Technological Properties of the Sensor Materials Based on Conjugated Polyaminoarenes

¹Ivan Franko Lviv National University, Ukraine, 6 Kyryla-Mefodia, Lviv, 79005, Ukraine; (0322) 728069; aksimen@ukr.net
²Stepan Gzytsky Lviv National Academy of Veterinary Medicine, 50 Pekarska, 79012, Lviv, Ukraine (0322)783635
³Kazimier Wielki University in Bydgoszcz, 30 Chodkiewicza, Bydgoszcz, Poland, tsizhb@ukw.edu.pl

The physical and technological properties (temperature dependence of conductivity, thermal stability, optical absorption and structure) of the new sensor materials based on conjugated polyaminoarenes such as poly-o-toluidine, polyaniline, poly-o,m-aminophenols have been studied in temperature interval 273-773 K. It has been defined that change of inclination in temperature dependence of conductivity is caused by thermal decomposition of the polymers. The optical spectra of the polymer films exhibit an interesting temperature behavior in the range 293- 473 K connected with thermochromic transitions. By the X-ray powder diffraction it has been found that polyaminoarenes are amorphous-crystalline materials with content of crystalline phase from 20-22 % (undoped polymers) to 40-44 % (doped by inorganic acids) and with dimensions of crystallites 15-30 ?. For the technology application of such materials the temperature interval corresponded to the linear dependence of conductivity before the thermal decomposition temperatures has been recommended.

Ключові слова: polyaminoarenes, conductivity, thermal stability, thermochromic transitions, structure.

 
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P.I. Melnyk, S.P. Novosyadly, V.M. Berezhansky, V.M. Vivcharuk

A Spectrometry in Submicron Technology of Large-Scale Arrays

The Precarpathian National University, T. Shevchenko Str., 57, 76025, Ivano-Frankivsk Ukraine,
e-mail: nsp@pu.if.ua, berezhansky@mail.ru, vivov@bigmir.net

A presence of atoms of basic elements and admixtures in semiconductor, and also character of their division in a volume determine the fundamental electrical and physical parameters of structures of large-scale arrays. The control of composition of crystalline structure gives primary information for subsequent researches of crystalline and electronic structure, character of chemical connection, degrees of alloying, imperfectness. The control of composition acts especially large part at the decision questions of manufacturing the homogeneously alloyed layers and crystals and crystals with the set concentration type in the active areas of submicron structures. The analytical side of such researches is a spectrometry.

 
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V.R. Petrenko¹, V.A. Terban², L. V. Shepel¹

Influence of Technological Parameters on Distributing of Oxygen
in the Silicon Single Crystal of Grown  by Czochralski Method

¹The Kremenchuk University of Economics, information technologies and management,
24/37 Proletarska str., Kremenchuk, E-mail: pvr@ient.net
²Subsidiary  'Pure Metals Plant' of 'Pure Metals' JSC, 3 Zavodskaya str., Svetlovodsk

In the given work on the basis of experimentally established dependences of speed of dissolution quartz crucible in silicon melt from temperature and pressure of gas in the chamber cultivation it is developed mathematical model of doping process of crystals of silicon by oxygen. By means of model the estimation of sensitivity of initial (maximal) concentration of oxygen in a crystal to fluctuations of the basic technological parameters is lead. The received results allow to draw conclusions, that average concentration of oxygen in a crystal is defined by average melt temperature, and character of distribution of oxygen in a crystal depends both on initial melt weight, and from the geometrical form of crucible, and also in a smaller measure from diameter of a crystal.  Thus concentration of oxygen practically does not depend on dynamic parameters of process of cultivation. Adequacy of the offered model is experimentally confirmed by values of parameters of the crystals received in real industrial conditions.

Key words: Czochralski method, distribution of oxygen, monocrystals of silicon, mathematical model, concentration of oxygen, doping

 
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А.V. Besov¹, А.V. Petryk², P.I. Melnyk²

Physical-Chemical Conditions of Co-Cr-Mo-Ni Homogenous Powders Receipt With the Set Components Concentration

¹Institutes of problems of material science the name of Frantsevicha of NAS of Ukraine,
 Krzhizhanivskogo Str., 3, Kyiv, 03680, Ukraine
²Precarpathion National University named after V. Stefanyk, Shevchenko Str.,57, Ivano-Frankivsk, 76000, Ukraine, e-mail: ivan.petryk@rambler.ru, phone: +(03422) 59-60-80

The controlled technology of chemical homogeneous Co-Cr-Mo-Ni powders receipt is developed and their technological properties are obtained.

Keywords: oxides compounds, diffusive satiation

 
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O.V. Mannapova, A.D. Sokolov, A.I. Kostrjitskijy

Physical-Chemical Properties of Oxide Tapes
on Steel, Received by Ionic Bombardment

Odessa national academy of food technologies,
112, Kanatnaja str., Odessa, Ukraine, 65039, tel. (0482) 29-11-26.

The results of researches are expounded on the increase of protective properties of unchroming surface of steel piston rings by oxidizing in a smouldering discharge in the remaining atmosphere of air. The thickness of oxide tapes concerned by an optical polarization method, phase composition of oxide - method of electronic diffraction on the reflection. It is investigational changing of electrode potentials, character of electrode processes during external polarization and protective properties of oxide tapes. By potential dynamic researches it is found out the region of passivity in which the quantity of corrosive defeats at the test diminishes with 10 - 11 % to 0,2 - 0,3 %. It is found out the optimum regime of treatment: 1000 V, 1,7 mА/сm², 10 minutes. A protective effect is predetermined by oxide tape of γ-Fe₂O₃, that is formed in a discharge.

Key words: tapes of oxides, corrosion, protective properties, ionic bombardment.

 
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I.S. Manak, D.V. Ushakov, U.S. Bialiausky

Wide and Flat Waveguide Gain Spectrum in the
Ga_1-xIn_xAs_ySb_1-y/Al_xGa_1-xAs_ySb_1-y Asymmetric Multiple-Quantum-Well Heterostructures

Belarussian State University, Nezovisimosty av. 4, 220030, Belarus
Phone: 375 17 2781313, Fax: 375 17 2121016, e-mail: ushakovdv@bsu.by

For asymmetric multiple-quantum-well heterostructures based on Ga_1-xIn_xAs_ySb_1-y/Al_xGa_1-xAs_ySb_1-y semiconductors it is shown that a wide and almost flat waveguide gain spectrum can be obtained over the 2.3–2.84 mm spectral range. Main attention is devoted to the results obtained under study of spectral characteristics of two-, three- and four- quantum-well structures with active region layers of different widths. Numerical simulation for band diagrams of the active region and shape of the waveguide gain spectra are performed.

Key words: Ga_1-xIn_xAs_ySb_1-y/Al_xGa_1-xAs_ySb_1-y heterostructure, multiple-quantum-wells, band diagram, inhomogeneous excitation, wide waveguide gain spectra.

 
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T.V. Cheban, O.M. Beregova, A.I. Costrgitsckyy

Character of Energy Effects at the Ion Plating of Sheeting

Одеська національна академія харчових технологій,
кафедра фізичної та колоїдної хімії, вул. Канатна, 112, м.Одеса

The method of the ionic precipitating is explained with possibility of substantial decline of technological temperature of condensation. The calculation indexes of temperature condition of steel (a thickness 4 ) are resulted at treatment of surface in an argon and temperature condition of precipitating of ionic coverage from a copper and ironchromical alloys on steel. The analysis of power and temperature effects is conducted at the ionic precipitating of coverage's.

keywords: corrosion, coverage, porosity, ionic precipitating.

 
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B.А. Tershak

Peculiarity of Aquation Activated of Plugging Materials

Research and planning institute VАТ «Ukrnafta»,
Pivnichnyy Bulvar named Pushkin’s, 4, Ivano-Frankivsk, 76019,
E-mail: tershak@ndpi.ukrnafta.com

The results of study of peculiarities of plugging materials hydrated by excess pressure are given. The properties of plugging muds formed such conditions have been researched. The mechanism of structure formation of the given plugging material is studied. The perspectives of application of mixture preparing method while well fixing are described.

 
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M.M. Bobina, T.V. Loskutova, I.S. Pogrebova, А.V. Besov

Heat Resistant of Carbide Surface Coating on the Base of Niobium and Chromium on the Carbon Steel Substrates

National Technical University of Ukraine “KPI”, Peremogy Av., 37, Kyiv, 03056, Ukraine

The increasing of surface coating’s heat resistant for carbon steel after complex doping by niobium and chromium are fixed. The numeric equations for high temperature heat resistant time calculations are established.

Key words: heat resistant, niobium, chromium, surface coating, temperature.

 
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М.О. Yelizarov

Visualization by Method of Khemografy Pitting
Corrosion of Metallic Tapes

Kremenchug state polytechnic university named by М.Ostrogradskyy
20, Pershotravneva Str. Kremenchug, UA-39614 Ukraine, E-mail: yel@bigmir.net

An experimental results of vizualization of corrosion processes in metall – metall film systems are represent. An initial stages of corrosion are vizualized for the first time, including the local corrosion and the development of pitting particularly. This experiments offer the challenge for further inquiry of corrosion processes in manifold systems.

 
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A. Cichon¹, S. Borucki²

The Influence of Physical-Chemical Parameters of Transformer Oil on the Time-Frequency Analysis Results of the Acoustic Emission Signals Generated by Partial Discharges

¹Technical University of Opole, Faculty of Electrical Engineering and Automatics,
ul. Sosnkowskiego 31, 45-272 Opole, Poland,
²Technical University of Opole, Institute of Electric Power Engineering,
ul. Sosnkowskiego 31, 45-272 Opole, Poland, e-mail acichy@po.opole.pl

The paper presents the measurement results of the acoustic emission (AE) generated by partial discharges (PDs) in oils of various physical-chemical parameters. The time-frequency analysis of the AE signals measured for PDs generated in the particular oils was carried out. For the AE signals measured, generated by PDs, the descriptors describing a signal in the frequency domain were determined, amplitude spectra were drawn and the spectrograms of the energy and amplitude density spectra were determined.

 
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M.Yu. Bobyk, V.P. Ivanitsky, O.V. Luksha

Improvement of Atomic Electronic Amplitudes for Electron Diffraction

Technical Engineering Departament, Uzhgorod National University,
Capitulna Str. 13, 88000 Uzhgorod, Ukraine. ivanc@mail.uzhgorod.ua

Using new coefficients of X-rays scattering amplitudes of atoms are improved of atomic electronic amplitudes of all elements the periodic table and many ions. Advantage of the received data is an opportunity of the assignment of electronic amplitudes in a wide range of scattering vectors. Comparison with known electronic amplitudes of different atoms specifies a good correlation received and available results, and also testifies about much higher precision and reliability of the improved data.

 
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M.M. Ryaboschuk

Modeling of the Interference of Electron Waves Scattered on the Atomic
Pair of the Substance

Uzhgorod national university, Uzhgorod, 13 Kapitulna str., tel.-614417, E-mail: ivanc@mail.uzgorod.ua

It was studied how the orientation of the atomic pair of the substance relative to an electron ray influences the general character of the distribution of interference intensity from the given pair as well as the qualitative contribution of atomic pairs with different orientation to the total diffraction pattern of the amorphous substance. It follows from here that experimental electron-diffraction data reflect the structure of amorphous substances which is predominantly characteristic for the directions oriented relative to the probing ray at angles a = 40°…90°. The structure in the directions close to an incidence vector of the probing ray is not actually reflected in them.

 
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S.P. Novosyadlyy, R.М. Ivanyuk

Appreciation of Multi-Lamina Metallization in the
Submicrons Structures of BIS

Vasyl Stefanyk PreCarpathian National University,
 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine

Explored multi-lamina metallization on the basis of Al-Si-Ho-TiW, TiS₂-TiN-TiW, Ti+AKG₀. It is shown that stability of the silicon integrated submicrons schemes on the basis of Al metallization can be affined due to balanced dispersion of warmth in the area of contact window. Determined optimum correlation between the layers of AKG_o and TiN, TiW, which allow to create thermally stable submicrons structures on the basis of Al metallization and to multiply heat emission from a crystal through internal bridges on the external terminals of microshemes.

appreciation of multi-lamina metallization in the submicrons structures of BIS

 
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V.I. Holota, I.T. Kohut

The Controlled Field Emission Silicic Cathode of Sub-Micron Sizes on the Basis of SOI Structure

‘Vasyl Stefanyk’ Prekarpathian National University,
201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail: kre@pu.if.ua

The practical method of the sub-micron sizes elements formation with the use of the standard projection lithography is proposed. It is developed structure and topology of high-voltage MOP transistor on SOI structure of that monolithically integrated with the emitter and its electrical characteristics are obtained. It is developed the technology of the production of the controlled field emission silicic emitters of those integrated with SOI MOP transistor. It is proposed to use different collections of images on the photo templates, which makes it possible on one technology to form structures with the different profiles and sizes of cathodes.

 
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