D.M. Freik, V.M. Chobanyuk, L.I. Nykyruy
Semiconductor Thin Films – Modern Problems (Review)
Vasyl Stefanyk PreCarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76025, Ukraine, E-mail:firstname.lastname@example.org
It is considered and analysed the basic aspects of perspective direction of microelectronics – thin film semiconductor material science. The special attention is spared to the applied questions: the basic methods of growing and research of structural properties, accented attention on physical and chemical properties, the most essential directions of practical application of thin.
V.R. Romanyuk3, V.U. Loya2, À.À. Mos’pak1
Concentration Dependences of Optical Properties of the Modified Structures of Type (X-Te, Bi, Pb)
1Uzhgorod National University, Ukraine
2Electronic Physics Institute of NASU, Ukraine
3Physicists of Semiconductors Institute of NASU, Ukraine
Thin films gradient structures are got (Õ-Bi, Pb, Te) by the method of thermal evaporation in a vacuum. Influence of the entered modifier is explored on optical properties. On the measure of enrichment glowed by a modifier (Bi, Pb, Te), near absorption is displaced in the longwave region of spectrum, the value of index of refraction diminishes on a certain wave-length (λ = 1 μì) and is multiplied the degree of ion binding. The optical parameters of films are certain on a wave-length λ = 0,6328 μì ellipsemetrical and spectraphotometrical methods.
L.I. Nykyruy, O.V. Iljkiv
Doping Scattering in Lead Telluride Crystals Doped by Thallium (PbTe:Tl)
Vasyl Stefanyk PreCarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76025, Ukraine, E-mail:email@example.com
The influence of doping scattering on sum scattering in lead telluride crystals doped by thallium are calculated. It is received Fermy energy behavior on doped PbTe:Tl.
O.A. Parfenjuk, M.I. Ilashchuk, K.S. Ulyanyckyj, I.V. Nikolajevych
Equilibrium Properties of Semi-insulating CdTe:V Crystals
‘Yuriy Fed'kovych’ Chernivtsi National University, Kotsyubynsky Str.,2, Chernivtsi, 58012, Ukraine; tel: 380(3722) 4-68-77; E-mail:firstname.lastname@example.org
Equilibrium characteristics of semi-insulation. with a conductivity σ=(4,3 10-9-1,1 10-10) Îm-1 ñm-1. CdTe:V crystals grown by the vertical Bridgman method are investigated. The concentration of the impurity in the melt was equal to (1 1018-1 1020) cm-3. The conductivity of a majority of the grown crystals had a mixed type. The activation energies of the operating levels were in the ranges EV=+(0,76-0,78) eV and EV=+(0,76-0,78) eV for the n- and p-type samples, respectively After annealing at 1073 K and different Cd vapour pressures the crystals remain high-resistive but the rate of moving to equilibrium depends on cooling conditions of the crystals after annealing.
B.K. Ostafiychuk, I.P. Yaremiy, V.I. Kravets, S.Y. Klyuka, S.I. Yaremiy
The Influence of Crystalline Structure of Epitaxial YIG Films on Strange Profiles
Precarpathion National University named after V. Stefanyk, 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, phone: +(03422) 59-60-75
The analysis of crystalline lattice transformation of epitaxial YIG films of different thickness is carry out in the work. It is shown that the unit cell of YIG films is rhombic strained, and the extent of deformation substantially depends on the thickness of film. The influence of extent of deformation of YIG films on the defect formation processes at implantation by the Â+ ions and strange profiles is explored.
G.A. Sukach1, V.V. Kidalov2, A.S. Revenko2
About Process of Convertation of GaAs Top Layer into GaN at Nitrtidation
1State University of Information and Communication Technologies, 7, Solomyanska str., Kyiv, 03110,
2Berdyansk State Pedagogical University, 4, Shmidt str., Berdyansk, 71100, Ukraine
We have studied the converting mechanism of GaAs top layer into GaN at nitridation. The influence of technological condition of nitridation (temperature of GaAs substrate, flow of nitrogen atoms etc.) on parameters of forming GaN thin films are considering. Mathematic model of converting process including nitrogen interaction with As sublattice are presented in the article.
The Influence of Germanium Submonolayers on Electron Transport in Polycrystalline Thin Gold Film
‘Ivan Franko’ Lviv National University, 50, Dragomanova Str., Lviv, 79005, Ukraine
The structure and electrical properties of Au films were investigated. It was shown that subatom Ge layer (mass thickness 2 nm) hasted Au films metallization. Predeposited subatom Ge surfactant undelayer course formation of more fine-dyspersated thin Au films. The experimental results were explained within the framework of the classical and internal size effect theories.
The Influence of Diffusing Impurities on Oscillatory Dependence of Absorption Coefficient of Acoustic Energy in Thin Films
Sumy State University, R.- Corsakova, 2, 40007 Sumy, Ukraine E-mail:email@example.com
The diffusion-annealing-time dependence of the absorption coefficient of longitudinal sound waves, , in a thin single-crystal plate capped with the ultra-thin layer of diffusing impurities was analyzed theoretically within the Fuchs and Falkovsky models. We demonstrate that changes in the absorption coefficient caused by the diffusion annealing provide the possibility to study the diffusion process, i.e. we may obtain the effective penetration depth of impurity atoms and estimate the bulk diffusion coefficient.
B.S. Dzundza1, G.D. Mateik2, Yu.V. Klanichka3
Post-Condensation Processes of Re-Crystallization of the Polycrystal PbTe Films on Mica
1Sub-Faculty of the Physics and Chemistry of Solid State Vasyl Stefanyk PreCarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:firstname.lastname@example.org
2Sub-Faculty of the Physics and New Technology Ivano-Frankivsk National University of Oil and Gas 15, Karpatska Str., Ivano-Frankivsk, 76000, Ukraine
The change of specific resistance (ρ) of PbTe polycrystal films us time of their self-controls in vacuum (t) by mathematical dependences are researches. The analytic and electrical-techniques model for resistance calculation of PbTe films are proposed. It is shown, that the ρ(t) change is related with crystallization processes. The dependence of linear sizes of grain us time of their annealing is determine.
L.A. Matveeva1, O.Yu. Kolyadina1, I.M. Matiyuk1, O.M. Mischuk2
Structural Perfection and Electronic Parameters of the Sulfide Surface of the Gallium Arsenide
1Institute of the Semiconductor Physics by Lashkarev NAS Ukraine, pr. Nauky, 45, Kyiv, 03028, Ukraine, E-mail: email@example.com
2National academy of sciences of Ukraine
By using electroreflectance method, Auger spectroscopy and electronography we were determined that Ga2S3-film is formed on the GaAs surface after chemical sulphidation of the GaAs in Na2S × 9H2O solution also increase band bending. The shift and splitting of the peaks, high-energy oscillations were observed in electroreflectance spectra after former treatment. The results can be explained by initiation of the mechanical stresses in Ga2S3 – GaAs heterosystem, built-in electric field and by reconstruction of the surface electron states on the film-substrate boundary surface that lead to surface quantization of the charge carriers.
Z.I. Zakharuk, Yu.P. Stest’ko, I.M. Rarenko, M.L. Koval’chuk, O.V. Galochkin,
Growth, Crystal and Compositional Structure of CdXHg1-XTe and CdXMnYHg1-X-YTe Graded Band-gap Epitaxial Layers
’Yuriy Fed'kovich’ Chernivtsi national university, Chernivtsi, Ukraine, E-mail:firstname.lastname@example.org
The present paper deals with the technology and investigation of structural perfection and distribution of element composition in CdxHg1-xTe, CdxMnyHg1-x-yTe graded band-gap structures (GBS) grown on the CdTe and Cd1-yMnyTe substrates. Mn content in CdxMnyHg1-x-yTe GBS depends on Cd1-yMnyTe substrate composition and mercury atoms chiefly substitute cadmium during diffusion into substrate. Cd1-yMnyTe substrate use gives the possibility to obtain structurally perfect GBS with
Electronic States on the Verge of Division is Amorphous-Crystal Geterotransition Ge33As12Se55 – p-Si
Uzhgorod National University, tel. (03122)33020; E-mail:email@example.com
The energy level diagram of the amorphous film Ge33As12Se55 – crystalline p-Si heterostructure was calculated on the basis of linear combination of atomic orbitals method and pseudopotential. The possibility of the application of this theoretical approach to the computation of the states at the interface and the oxidized layers has been shown. The results of computation have been correlated with experimental data.
V.P. Makhniy1, Ì.F. Pavluk2, Yu.². Semenyshyn2
Structural Properties of Heterolayers of Cadmium Selenide, Received by a Method Izovalent Substitution
1Chernivtsi National University, Chemical Department, 2, Kotziubinskoho Str., Chernivtsi, 58012, Ukraine, E-mail:firstname.lastname@example.org
2Vasyl Stefanyk’ Prekarpathian University, 201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail: email@example.com
It is lead the comparative analysis of a microstructure, X-ray topograms and curves of fluctuation heterolayers cadmium selenide, received izovalent substitution with monocrystal substrates (-CdSe i (-ZnSe.
M.A. Ruvinskii1, B.M. Ruvinskii2
Electroconductivity and Thickness Fluctuations of Quantum Semiconductor Wire
1Vasyl Stefanyk' Precarpathian National University, 57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
2Ivano-Frankivsk National Technical University of Oil and Gas, 15, Carpatska Str., Ivano-Frankivsk, 76000, Ukraine, firstname.lastname@example.org
The relaxation time, electron mobility and static electroconductivity caused by the thickness fluctuation of quantum semiconductor wire are determined. For nondegenerate statistics of carriers at sufficiently low temperatures the electron mobility un T1/2 . In a limiting case of a strong magnetic field H, directional along length of a wire, in mobility there is a factor H -1/2. It is shown that reviewed mechanism of charge carriers relaxation is important for the electroconductivity of rather thin and pure wire at low temperatures. The numerical calculations have been fulfilled for GaAs wire.
B.M. Ruvinskii1, M.A. Ruvinskii2
Energy Spectrum of Acoustic Phonons in Rectangular Quantum Wire
1Ivano-Frankivsk National Technical University of Oil and Gas, 15, Carpatska Str., Ivano-Frankivsk, 76000, Ukraine, email@example.com
2Vasyl Stefanyk' Precarpathian National University, 57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
The acoustic vibrations into the model of rectangular quantum wire with free surface have been considered. The dispersion curves for the confined acoustic phonons of the hybrid width and thickness modes in rectangular GaAs wire have been calculated. Besides the dispersion of phase velocity, the simultaneous existence of the longitudinal and transverse vector components of displacements is characteristic of the hybrid modes. The energy spectrum of acoustic phonons has determined for the different cross-sectional dimensions of GaAs wire.
B.K. Kotlyarchuk1, I.F. Myronyuk3, D.I. Popovych1,2, A.S. Serednytski1
Synthesis of Oxide Nanopowder Materials and Research of Their Luminescent Properties
1Institute of Applied Problems of Mechanics and Mathematics NASU,3b, Naukova Str., Lviv 79060, Ukraine, E-mail:firstname.lastname@example.org
2National University "Lvivska Polytechnika", Bendera Str. 12, Lviv,79013, Ukraine
3’Vasyl Stefanyk’ Precarpathian National University, 57, Shevjhjchenko Str., Ivano-Frankivsk, 76000, Ukraine
In the paper the method of producing of complex nanopowder materials ànd barrier structures on their basis by means of pulse laser reactive evaporation of metal targets is offered. It enables to effectively produce nanopowders with mean geometrical diameter up to 5-10 nm and specific surface more than 80-190 m2/g at productivity up to 50 g/h. The carried out researches of photoluminescent properties of nanopowder materials ZnO and TiO2 (after laser annealing including) with the purpose of studying the opportunity of creation on their base a gas sensor. The influence of adsorption of molecular gases O2, H2, and CO on change of intensity of photoluminescence of nanopowder ZnO is investigated. On the basis of the carried out researches the method for detection, recognition and estimation of gas concentration in the analyzed environment is proposed. With the purpose of increasing the selectivity of the method it is offered to analyze the radical-recombination luminescence, which spectral characteristics are determined by the given superficial condition of granules of nanopowder and chemical structure of the analyzed gas.
V.F. Zinchenko, O.V. Stamikosto, S.O. Tarasenko, S.B. Meshkova,
I.V. Berezovska, Ye.V. Timukhin
Synthesis in Saline Melts and Optical Properties of Apatites of the Composition EuxSr10-x(PO4)6F2
A.V. Bogatsky Physico-Chemical Institute of NAS of Ukraine, 86 Lustdorfska Doroga Str., 65080, Îdesà, Ukrain. Å-mail: email@example.com
The processes of synthesis of europium-containing strontium fluoroapatites in the NaCl-KCl melt at 700 and 870ºC were investigated by the methods of X-ray diffraction analysis, diffuse reflectance spectroscopy and luminescence spectroscopy. Identity of a structure of the phases formed at the partial substitution of Eu(II) and Eu(III) for Sr has been established. The specimens of europium-strontium fluoroapatites show certain peculiarities of the optical absorbance and luminescence due to the 4f-5d- and 4f-4f-electron transfers in the Eu2+ and Eu3+ ions respectively. Ratio between integral intensities of the bands of luminescence qualitatively corresponds to the concentrations of Eu(II) and Eu(III) valence forms in the apatite. Possibility of the synthesis of (Eu, Sr)FAP by the way of the exchange sorption in the saline melt has been shown as well.
V.A. Kulichenko1, S.A. Nedil’ko2, O.G. Dzyazko2, O.G. Zen’kovich2
Phase Formation And Oxygen Non-Stoichometry in La-Sr-Ni-O System
1Kiev national university of Development and Architecture
2Taras Shevchenko National University of Kiev, Chemical Faculty, Volodimirskaya str., 64, Kyiv, E-mail:firstname.lastname@example.org
Non-ctoichometric composites, which correspond to La3-xSrxNi2O7-δ where 0≤x≤2, have been obtained. It was shown that La3+ Sr2+ substitution in Ruddlesden-Popper phase (RPP) of Lan-1La2NinO3n+1, where n=2 (La3Ni2O7), causes the transition to La2NiO4 (n=1) and NiO removal. The influence of oxygen non-stoichometry on resistive properties of complex oxide components has been investigated.
D.M. Freik, V.V. Prîkopiv, U.Ì. Pysklynets, I.V. Gorichok, V.B. Van’chuk
Ñrystalochemical Models of Point Defects in CdTe:Ge
Preñarpathian Universityò named after Vassyl Stefanyk, 57, Shevchenko Str., Ivano-Frankivsk, 76025, Ukraine, E-mail:email@example.com
On the basis of quasichemical equations, it has been conducted an analysis of defects in CdTe:Ge crystals under conditions with high temperature equilibrium in account of solubility limitation for germanium dope. Temperature dependences for concentrations of point defects and free charge carriers are obtained, as well as germanium solubility in material. Theoretical calculations are in a good agreement with experimental dependences of indicated values for the investigated annealing temperature range.
Diagrams of Equilibrium of Intrinsic Defects and Deviation from Stoichiometry of Gallium Nitride and Zinc Oxide
Berdyansk State Pedagogical University, 71100, Berdyansk, 4 Shmidt Prospekt
Thermodynamic analysis in content intrinsic defects for GaN and ZnO was carrier out. The causes depending the tendency of GaN and ZnO to monopolar conductivity type were observed. The method, allowing effectively operating by deviation from stoichiometry of giving compounds has been suggested.
L.Yo. Ìåzhylovska, V.Ì. Boychuk, V.V. Boryk
Mechanisms of Formation of Solid Solutions in the System PbTe-MnTe2
’Vasyl Stefanyk’ Precarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:firstname.lastname@example.org
On the basis of antistructure PbTe are offered the ñrystaloquasichemical formulas of solid solutions of the system PbTe-MnTe2: for the mechanisms of substitution of vacancies lead (À) and taking root of manganese ions in the tetrahedral hole of the dense packing of atoms of tellurium (Â). It is shown, that substitution by the ions of cationic vacancies is the dominant mechanism of formation solid solutions.
S.À. Êurta1, Î.Yu. Zakrzhevskyy1, Î.S. Êurtà2
Study Dehydrochlorination of Chlororganic Waste on Border of Phases Division
1’Vasyl Stefanyk' Precarpathian National University, 57 Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
2National university “L’viv polytechnics”, L’viv, 12, S. Bandery Str.
This article deals with the study of utilization chlororganic waste production 1,2-dichlorethane, and, mainly, the condition of the processing waste. At this moment all chlororganic waste production 1,2-dichlorethane is burnt. Our work includes the investigation of the method, which is based on the alkaline dehydrochlorination of chlororganic waste with the simultaneous copolymerization with the unsaturated fraction Ñ5-Ñ9.
L. Mezhylovska1, H. Babushchak1, P. Zukowski2
Ñrystaloquasichemical Formulas and Point Defects Nonstoichiometrical of Zinc Selenide
1’Vasyl Stefanyk’ Prekarpathian University, 201, Galytska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:email@example.com
2Lyubli Technical University, 20-618 Lyublin, Poland. E-mail:firstname.lastname@example.org
Dependence of concentration defects and Hall concentrations is calculation from the degree of deflection and coefficients of disproportionation defects. Are offered ñrystaloquasichemical formulas for nonstoichiometrical n- and p-ZnSe on condition of existence singly- and double-charged vacancies and internode atoms of zinc and selenium accordingly.
D.M. Freik1, O.V. Tkachyk1, I.M. Ivanyshyn2
Physical and Chemical Properties and Ñrystaloquasichemical Formulas of Solid Solutions p-SnTe-Sb2Te3(Bi2Te3)
1’Vasyl Stefanyk’ Precarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:email@example.com
2Ivano-Frankivsk State Medical Institute, Galitska Str., Ivano-Frankivsk, 76000, Ukraine, E-mail:Ivan_Ira@rambler.ru
To cite the phase diagrams of equilibrium of the systems p-SnTe-Sb2Te3 and p-SnTe-Bi2Te3 and dependence of physical and chemical properties from composition for homogeneous regions on the basis of p-SnTe. Ñrystaloquasichemical formulas for different mechanisms of formation solid solutions are offered. It is shown, that on condition of simultaneous existence of double- and tetracharged vacancies tin, substitutions by the atoms of the stibium (bismuth) vacancies tin [VSn2-] and [VSn4-] is dominant mechanisms and the formation of complexes [Sb(Bi)i8+ - VSn2- ]+ with a next selection of phases Sb2Te3 (Bi2Te3) accordingly.
L.V. Nosach and E.F. Voronin
Adsorption Modification of High-disperse Silica with Non-volatile Organic Compounds in the Gaseous Dispersion Medium
Institute of Surface Chemistry, 17 General Naumov Street, 03164 Kiev, Ukraine, tel.: 422-96-27, E-mail:firstname.lastname@example.org
An adsorption modification has been examined of high disperse silica with polymers and non-volatile organic compounds in a gaseous dispersion medium. This method has been shown to be more effective one than that of liquid phase impregnation. The solvation of modificator molecules has been found to be the main factor governing the process of modifying high disperse silica with polymers and bioactive compounds.
H.A. Sirenko1, M.B. Kvych1, V.I. Kyrychenko2
The Copper Reduction in Surface Layers of the Metallized Carbon Fibres
1‘Vasyl Stefanyk’ Precarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
2Hmelnytsky National University, 11, Instytutska Str., Hmelnytsky, 29016, Ukraine
The changes of surface layers crystal structure of carbon fibres in the course of copper-plating were investigated. The metallic coating process using modified formaldehyde and zinc technology was realized. It is established, that copper content in copper-copper oxide increases when using two-layer alternately modified formaldehyde and zinc method.
P.P. Gorbyk, V.V. Levandovs’kyi, R.V. Mazurenko, S.M. Makhno, O.V. Kondratenko, O.O. Chuiko
Effect of Highly Disperse Silicon Dioxideon Properties of Polymeric Composites Polychlorotrifluoroethylene Silver Iodide
Institute of Surface Chemistry of the NAS of Ukraine 17 Generala Naumova Str., Kyiv, 03164, Ukraine E-mail:email@example.com
An experimental research has been made into properties of polymeric composite materials (PCM) whose polymeric ingredient is polychlorotrifluoroethylene (PCTFE). Subjects of inquiry included lowdimensional systems PCTFE AgI and PCTFE AgI-SiO2, with the content of silver iodide and silicon dioxide being equal to 0-100 vol % and 0 0.5 vol %, respectively. The characteristics under investigation were electrophysical properties in a superfrequency range and thermophysical properties (thermal capacity, linear thermal expansion coefficient). ²t has been found that incorporation of doping admixtures of nanodimensional SiO2 into such a system leads to significant changes in the supermolecular structure of its polymeric constituent.
L.Yu. Ostrovskaya1, A.V. Vasin2, A.V. Rusavsky2, A.N. Nazarov2, V.S. Lysenko2, V.P. Krasovskyy3
Thermal Treatment Effect on the Tin Melt Adhesion to the Surface of Amorphous Silicon Carbide Films
1V. M. Bakul Institute for Superhard Materials, N.A.S. of Ukraine, 2, Avtozavodskaya Street, Kiev, 04074, Ukraine, E-mail firstname.lastname@example.org 2Institute of Semiconductor Physics, N.A.S. of Ukraine, 42, Nauki Prospekt, Kiev, 03028,Ukraine, E-mail email@example.com
3Institute for Problems of Materials Science, N.A.S. of Ukraine, 3 Krzhyzhanovsky Street, Kiev, 03142, Ukraine, E-mail firstname.lastname@example.org
A comparative study of the effect of the vacuum high-temperature annealing on the amorphous silicon carbide films structure and wettability with tin melt was conducted. Near-stochiometric amorphous silicon carbide films were deposited by two methods: reactive magnetron sputtering of silicon target in Ar+CH4 gas mixture (a-SiC:H) and by modified vacuum arc deposition using SiC cathode (a-SiC). Capillary properties of the surface were analyzed by the sessile drop method in the temperature range from 250 to 700 Ñ at a pressure of 1 10-3 Pa. Structures of the films were analyzed using Raman scattering and FTIR absorption spectroscopies. It has been found, that the variations in wettability and adhesion of tin melt to the film surface under annealing correlate with the variations in their structure and chemical state of the surface. For the a-SiC films the structure ordering of a-SiC and formation of SiC nanocrystallites is observed. For the a-SiC:H films dehydrogenation of the structure and the formation of free carbon clusters at 650 C and above with subsequent surface cleaning at high temperature is seen.
V.I. Dvoruk, Ì.V. Kindrachuk, O.V. Gerasimova
Definition of Superficial Energy of Metals at Abrasive Wear Process
National aviation university, 1, Cosmonaut Komarova av., Kiev, 03058, Ukraine
The method of definition of superficial energy of metals Is developed at abrasive wear process on the basis of on the basis of the power approach. The estimation of working capacity of the offered method is lead.
Tomasz Boczar, Pawel Fracz
Comparison of the Measurement Results of Electrical Discharges Registered by the Acoustic Emission and Optical Spectrophotometry Methods
Technical University of Opole
The basic aim of the current research work on electrical discharges is a thorough study of the phenomena that accompany their generation so that we can measure them effectively, recognize their forms and locate the place of their generation in various types of insulation systems. Moreover, there is also a need to correlate the measurement results of electrical discharges obtained through various diagnostic methods in order to obtain as complete as possible information of the aging degree of the insulation measured. Within the paper there will be presented the results of measurements and analyses of optical and acoustic signals emitted by discharges in the point-point system in air.
The Influence of Temperature and Dampness on the Value of the Main Time Constant of Paper-Oil Insulation Determined by Using Deby’s Model
Technical University of Opole, 31, Sosnkowskiego Str., 45-272 Opole, Poland. E-mail:email@example.com
The paper presents research results of paper-oil insulation samples obtained through the measurement of the electric polarization current. The research tests were carried out in a home-made laboratory system, which made it possible to regulate and control the temperature and humidity of mineral insulation oil. The samples of the electrotechnical paper differed in the degree of aging. Based on the measurements of the polarization current the value of the main time constant of the insulation under study and values R & C of the substitute diagram were determined by using the Deby’s model. The analysis of the influence of temperature, humidity and the degree of aging of the paper-oil insulation samples on the values determined from the model was carried out..
J. Balamucki1, P. Czarnecki1, T. Gotszalk1, A. Marendziak1, I. Rangelow2,
J. Wilk1, Z.W. Kowalski1
Profilometric, SEM and AFM Investigations of Titanium and Steel Surface Micro- and Nanoroughness Induced by Neutralized Krypton Ion Beam as a First Stage of Fractal Analysis
1 Wroclaw University of Technology, 11-17, Z. Janiszewskiego Str., 50-372 Wroclaw, Poland
2 University of Kassel, 40, Heinrich Plett Str., 34132 Kassel, Germany Fax: +48 (071) 328 35 04; E-mail:firstname.lastname@example.org
This paper presents the influence of krypton ion irradiation of polycrystalline 99.5% titanium and 1H18N9T stainless steel (made in Poland) on resulting surface roughness and topography, examined by scanning electron and atomic force microscopes, as well as by means of profilograph, that enabled us to study surface morphologies in various scales, that may be important in fractal analysis of ion bombarded surface.
Tomasz Boczar, Marcin Lorenc
Time-frequency Analysis of the Calibrating Signals Generated in the Hsu-Nielsen System
Technical University of Opole, 45-272 OPOLE, ul. Sosnkowskiego 31, Poland, E-mail email@example.com
This paper characterizes the idea of calibrating measurement paths, which make the measurement of the acoustic emission (AE ) pulses generated by partial discharges (PDs) in insulation of power appliances possible, by using the Hsu-Nielsen method. It also presents the results of the analyses done in the time and frequency domains of the measured AE pulses generated by the Hsu-Nielsen calibrating source. The measurement and analysis of the AE pulses were performed on the lid of the distributive transformer tub.
A. Cichon1, S. Borucki2
The Influence of Physicochemical Parameters of Transformer Oil on the Time-frequency Analysis Results of the Acoustic Emission Signals Generated by Partial Discharges
1Technical University of Opole, Faculty of Electrical Engineering and Automatics,
2Institute of Electric Power Engineering, ul. Sosnkowskiego 31, 45-272 Opole, Poland. E-mail firstname.lastname@example.org
The paper presents the measurement results of the acoustic emission (AE) generated by partial discharges (PDs) in oils of various physicochemical parameters. The time-frequency analysis of the AE signals measured for PDs generated in the particular oils was carried out. For the AE signals measured, generated by PDs, the descriptors describing a signal in the frequency domain were determined, amplitude spectra were drawn and the spectrograms of the energy and amplitude density spectra were determined.
H.A. Sirenko, Î.V. Êuzyshyn
Wearability of Solids When the Nanofilms of Lubrication Materials on Their Surfaces are Given: Dependence Films Thickness of Mineral Oils on Loading and Temperature
1Vasyl Stefanyk’ Precarpathian National University, 57, Shevchenko Str., Ivano-Frankivsk, 76000, Ukraine
Estimations of lubricating layer thickness of mineral oils – aviation MC-20, compressor-12M, industrial-20, Vaseline (medicine) – and dependence films thickness of mineral oils on loading and temperature are given.